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    sgm 8905

    Abstract: 3302 81A ir 3302 81A alcan joint compound snapdragon AKO 546 687 burglar alarm system abstract walkie talkie circuit diagram ZENER DIODES DZ 8407 tea 1601 t
    Text: December 19, 2000 Preface to the 13th Edition The Harmonized Tariff Schedule of the United States, Annotated for Statistical Reporting Purposes HTS 2001 is being published pursuant to section 1207 of the Omnibus Trade and Competitiveness Act of 1988 (P.L.


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    \FR\FM\21DED1 pfrm02 21DED1 sgm 8905 3302 81A ir 3302 81A alcan joint compound snapdragon AKO 546 687 burglar alarm system abstract walkie talkie circuit diagram ZENER DIODES DZ 8407 tea 1601 t PDF

    Untitled

    Abstract: No abstract text available
    Text: Assem bly instructions To help facilitate proper cabie assembly and for convenience, a number of Assembly instructions are included m this catalog on the following pages. Please note that the specific Assembly Instruction which applies is indicated throughout the catalog with


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    COf-T-606' 205/21S PDF

    PNP 2A DPAK

    Abstract: No abstract text available
    Text: KSH117 PNP SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC Current Gain Built-in a Damper Diode at E-C Lead Formed tor Surface Mount Applications No Suffix Straight Lead (I. P AC K," - 1" Suffix) Electrically Similar to Popular TIP117


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    KSH117 TIP117 PNP 2A DPAK PDF

    DSWM5

    Abstract: No abstract text available
    Text: Microwave Integrated Circuit Switches • GaAs, PIN Diode, & Schottky Diode Technology • Thin-Film MIC Technology • Plug In DIP Style Packages • Flatpack Packages • Connectorized Packages • Full Military Screening Available See Page 320 DAICO INDUSTRIES


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    DC-12000 DS0519 DC-400 100C0347 DSWT1981 DSWT2180 DS0097 100C1297 100C1287 DS0319 DSWM5 PDF

    2sk2975

    Abstract: 157-299 01 139706 transistor 16870 72477 17053 cetie
    Text: MITSUBISHI RF POWER MOS FET 2SK2975 SILICON MOS FET TYPE DESCRIPTION 2SK2975 «S a MOS FET typ« transistor spcofically designed tor VHFrtJHF power air«>Hie<Siipp<»caUO<£ FEATU R ES • High power >*n:Gpcoa.4<Jß Ö Voo-9.6V .<-450M H / Rrv-30dBm • H Q fi e m c n !rc y :W % typ


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    2SK2975 -450M Rrv-30dBm 2sk2975 157-299 01 139706 transistor 16870 72477 17053 cetie PDF