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    CFY 14 SIEMENS Search Results

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    CFY10

    Abstract: siemens gaas fet CFY 10 Ga FET marking k CFY 18 cfy 14 siemens
    Text: SIEMENS CFY 10 GaAs FET • Low noise • High gain • Suitable up to 14 G Hz • Ion-implanted planar structure • All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


    OCR Scan     		Q62703-F11 fl23SbOS 00b74cà CFY10 fl235fci05 CFY10 siemens gaas fet CFY 10 Ga FET marking k CFY 18 cfy 14 siemens PDF

    cfy 14 siemens

    Abstract: CFY 18 CFY 10 cfy siemens CFY12 CFY10 CFY 18-23
    Text: SIEMENS AKTIENGESELLSCHAF QBE D • fl23SbDS QOlSb?*} T H S I E G 7~“3/-^5' GaAs FETs Gallium Arsenide Field-Effect Transistors Metal Ceram ic Packages Type Max. ratings V ds V 5 CFY 10 5 CFY 11 CFY 12 5 0 CFY 19-18 6 □ CFY 19-22 6 □ CFY 19-27 6 CFY 18-12 5


    OCR Scan     		fl23SbDS cfy 14 siemens CFY 18 CFY 10 cfy siemens CFY12 CFY10 CFY 18-23 PDF

    cfy 19 siemens

    Abstract: cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 Q62703-F106 CFY 10 Q62703-F108
    Text: SIEMENS CFY 25 GaAs FET • • • • • Low noise High gain For front-end amplifiers ion-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


    OCR Scan     		VXM05208 Q62703-F106 Q62703-F107 Q62703-F108 0Qfcj75Cn cfy 19 siemens cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 CFY 10 PDF

    CFY19-22

    Abstract: CFY19 Dual-Gate* bf981 bf987
    Text: "sIEMENS AKTIENGESELLSCHAF bOE I> • SEBSbDS DDS1M7M S34 «SIEfi 'T'dó'M SIEMENS Transistoren Transistors MOS Feldeffekt-Transistoren Type MOS Field-Effect Transistors Maximum Ratings Characteristics TA= 25° C ^ds V ¡d mA P,o. G ps mW dB ' * I' c' ' '


    OCR Scan     		BF930 BF994S BF996S BF998 BF1012 CF739 CF750 OT-143 CFY19-18 CFY19-22 CFY19 Dual-Gate* bf981 bf987 PDF

    CFY75

    Abstract: cfy 75 cfy 14 siemens HEMT marking P FMI 591 cfy siemens CFY 19
    Text: SIEMENS CFY 75 AIGaAs/GaAs HEMT • Very low noise • Very high gain • For low-noise front end amplifiers up to 20 GHz • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


    OCR Scan     		Q62702-F1368 Q62702-F1369 235b05 DDL75MG CFY75 EHT08184 fl235b05 0QL7S41 CFY75 cfy 75 cfy 14 siemens HEMT marking P FMI 591 cfy siemens CFY 19 PDF

    GaAs FET cfy 19

    Abstract: S11 SIEMENS z0 607 MA 7a
    Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters 4 ^ ESD: V5005553 Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20


    OCR Scan     		V5005553 Q62702-F1393 Q62702-F1394 GaAs FET cfy 19 S11 SIEMENS z0 607 MA 7a PDF

    3tb 50 siemens

    Abstract: No abstract text available
    Text: SIEMENS CFY 35 GaAs FET • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20 NA Q62702-F1393


    OCR Scan     		Q62702-F1393 Q62702-F1394 535bD5 D155EÃ 3tb 50 siemens PDF

    cfy 19 siemens

    Abstract: No abstract text available
    Text: SIEMENS CFY 19 GaAs FET • • • • • Low noise High gain Ion-implanted planar structure All gold metallization For front ends • For oscillators • For antenna amplifiers from UHF up to 12 GHz • Hi rel/MIL tested upon request ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		Q62703-F14 Q62703-F3 G0b7502 00h7S03 cfy 19 siemens PDF

    GaAs FET cfy 14

    Abstract: No abstract text available
    Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration


    OCR Scan     		Q62702-F1393 Q62702-F1394 GaAs FET cfy 14 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CFY 30 GaAs FET • • • • • • • Low noise Fmin= 1.4 dB @ 4 GHz High gain (11.5 dB typ. @ 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion implanted planar structure Chip all gold metallization Chip nitride passivation


    OCR Scan     		Q62703-F97 OT-143 D15SS7b PDF

    5N521

    Abstract: CFY30
    Text: SIEMENS CFY 30 GaAs FET F eatures • Low noise /-'mm = 1.4 d B at 4 G Hz • High gain (11.5 dB typ. a l 4 GHz) • For o scillators up to 12 G Hz • For am p lifiers up to 6 GHz • Io n -im planted p lanar structure • C hip all gold m etallization


    OCR Scan     		PDF

    CFY65

    Abstract: CFY 65 siemens 230 97 o VXM05208
    Text: SIEMENS AIGaAs/GaAs HEMT CFY 65 • Very low noise F = 1.2 dB max. at 12 GHz • Very high gain (G a = 11.5dB typ. at 12 GHz) • For low-noise front-end amplifiers up to 20 GHz • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		VXM05208 Q62703-F101 Q62703-F102 E35L05 00b7534 CFY65 EHT08H7 EHT08I46 EHT08I48 CFY65 CFY 65 siemens 230 97 o VXM05208 PDF

    cfy siemens

    Abstract: cfy 19 siemens CFY 19 cfy 14 siemens MARKING SOT-143 C5 CFY 18 CFY 10 6MA80 CFY10
    Text: SI EM ENS A K T I E N G E S E L L S C H A F 47E D fl235büS OOSbSflü □ « S I E G GaAsFETs Metal Ceramic Package Type B B S El □ S S Max. ratings Package M arking Fig. 14 14 100 mil 100 mil C10 C11 23 23 — - 11.5 11.5 - - Cerec-XF Cerec-XF Cerec-XF


    OCR Scan     		fl235b OT-143 cfy siemens cfy 19 siemens CFY 19 cfy 14 siemens MARKING SOT-143 C5 CFY 18 CFY 10 6MA80 CFY10 PDF

    HEMT marking K

    Abstract: marking t54 CFY 18 CFY77-08 CFY77-10 Q62702-F1549 Q62702-F1559 cfy 14 siemens marking code 51C HEMT
    Text: SIEMENS AIGaAs / InGaAs HEMT CFY 77 D a t a s h e e t Features ‘ Very low noise ‘ Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		VS005553 CFY77-08 Q62702-F1549 CFY77-10 Q62702-F1559 chap18 S35bD5 HEMT marking K marking t54 CFY 18 cfy 14 siemens marking code 51C HEMT PDF

    d-10

    Abstract: gaas fet marking a GaAs FET cfy 19 CFY 35-20 F1393 f1394 marking code 5 Q62702-F1393 Q62702-F1394 siemens gaas fet
    Text: CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters ESD: Electrostatic discharge sensitive device,


    Original     		Q62702-F1393 Q62702-F1394 d-10 gaas fet marking a GaAs FET cfy 19 CFY 35-20 F1393 f1394 marking code 5 Q62702-F1393 Q62702-F1394 siemens gaas fet PDF

    cfy siemens

    Abstract: CFY77-10 cfy77 HEMT marking P 059 906 051 CFY77-08 Q62702-F1549 Q62702-F1559 cfy 14 siemens HEMT marking K
    Text: AlGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters


    Original     		CFY77-08 Q62702-F1549 CFY77-10 Q62702-F1559 cfy siemens CFY77-10 cfy77 HEMT marking P 059 906 051 CFY77-08 Q62702-F1549 Q62702-F1559 cfy 14 siemens HEMT marking K PDF

    F5049

    Abstract: siemens gaas fet 76 marking code SIEMENS gaas fet marking a CFY30 HL 050 118 31 04 FET marking code FET marking codes FET transistors with s-parameters Q62703-F97
    Text: CFY 30 GaAs FET Datasheet * Low noise Fmin = 1.4 dB @ 4 GHz * High gain ( 11.5 dB typ. @ 4 GHz ) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz


    Original     		Q62703-F97 OT-143 F5049 siemens gaas fet 76 marking code SIEMENS gaas fet marking a CFY30 HL 050 118 31 04 FET marking code FET marking codes FET transistors with s-parameters PDF

    NF 847 G

    Abstract: NF 833 nf 739 BA 857 k d 998 0 BAT 99 diode bav Siemens transistors rf CFY 35-20 6149-5X
    Text: System Overview Outdoor Unit SAT - TV Low Noise Converter LNC RF Amplifier Mixer Oscillator 3. Stage active passive CFY 35-20 CFY 35-23 BAT 15-099/ BAT 15-04 IF-Amplifier 1. Stage 2. Stage BFP 405 BFP 420 CFY 30/ BFP 405 Power Supply 2 x BCX 51 3 x BC 858/W


    OCR Scan     		858/W 857/W IQ62702-C1847 Q62702-C954 62702-C1884 Q62702-C1850 Q62702-C1742 Q62702-F1393 Q62702-F1394 Q62703-F97 NF 847 G NF 833 nf 739 BA 857 k d 998 0 BAT 99 diode bav Siemens transistors rf CFY 35-20 6149-5X PDF

    c639

    Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
    Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04


    OCR Scan     		3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN PDF

    SIEMENS 230 92 O

    Abstract: siemens gaas fet gaas fet marking a FET GAAS marking a CFY 18 siemens 230 98 O siemens 230 99 o CFY30 S11 SIEMENS
    Text: SIEMENS CFY30 GaAs FET Datasheet * Low noise Fmjn= 1.4 dB @ 4 G H z * High gain ( 11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation


    OCR Scan     		CFY30 Q62703-F97 OT-143 SIEMENS 230 92 O siemens gaas fet gaas fet marking a FET GAAS marking a CFY 18 siemens 230 98 O siemens 230 99 o CFY30 S11 SIEMENS PDF

    CFY77-10

    Abstract: HEMT HEMT marking K 036 906 051 VS005553
    Text: SIEM ENS AIGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise *Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type


    OCR Scan     		VS005553 CFY77-08 CFY77-10 Q62702-F1549 Q62702-F1559 CFY77-10 HEMT HEMT marking K 036 906 051 VS005553 PDF

    BDP 284

    Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
    Text: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05


    OCR Scan     		3-03W 4-03W 5-03W Q62702-A829 Q62702-A859 Q62702-A950 Q62702-A952 Q62702-A608 Q62702-A718 Q62702-A687 BDP 284 BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529 PDF

    CFY30

    Abstract: CFY 18
    Text: SIEMENS CFY30 GaAs FET Datasheet * Low noise Fw„ = 1.4 dB @ 4 G H z * High gain (11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation


    OCR Scan     		CFY30 Q62703-F97 OT-143 CFY30 CFY 18 PDF

    62703-F

    Abstract: CFY30 GaAs FET cfy 19 siemens gaas fet
    Text: fl2 3 b3 2ü BSE D GaAs FET SIEMENS/ 0G1734Ô 2 « S I P SPCLi SEMICONDS CFY30 T " '3 1 • • • • • • • Low noise Fm n = 1.4 dB at 4 GHz) High gain (11.5 dB typ. at 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion-implanted planar structure


    OCR Scan     		0G1734Ô CFY30 62703-F OT-143 fl23b32Q GG173S7 T--31--25 CFY30 GaAs FET cfy 19 siemens gaas fet PDF