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MACOM CGH27015F RF MOSFET HEMT 28V 440166
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH27015F	Tray	2		1	1 $115.72 10 $93.932 100 $115.72 1000 $115.72 10000 $115.72	Buy Now
Mouser Electronics	CGH27015F		181			1 $111.92 10 $103.95 100 $98.85 1000 $98.85 10000 $98.85	Buy Now
Richardson RFPD	CGH27015F				1	1 $153.22 10 $153.22 100 $153.22 1000 $153.22 10000 $153.22	Buy Now
MACOM CGH27015F-AMP AMPLIFIER, 2.3-2.7GHZ, CGH27015F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH27015F-AMP	Bulk			2	1 - 10 $752.46 100 $752.46 1000 $752.46 10000 $752.46	Buy Now
Mouser Electronics	CGH27015F-AMP		5			1 $752.46 10 $752.46 100 $752.46 1000 $752.46 10000 $752.46	Buy Now
Richardson RFPD	CGH27015F-AMP				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

CGH27015F Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CGH27015F		Cree	15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX		Original	PDF

CGH27015F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ofdm amplifier Abstract: No abstract text available Text: PRELIMINARY CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX	Original	PDF	CGH27015F CGH27015 CGH2701 CGH27015F ofdm amplifier
CGH27015F-TB Abstract: amplifier circuit ofdm amplifier cree rf 10UF 470PF CGH27015 CGH27015F CGH27015-TB TRANSISTOR A98 Text: PRELIMINARY CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX	Original	PDF	CGH27015F CGH27015 CGH2701 CGH27015F CGH27015F-TB amplifier circuit ofdm amplifier cree rf 10UF 470PF CGH27015-TB TRANSISTOR A98
CGH27015 Abstract: CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,	Original	PDF	CGH27015 CGH27015 CGH2701 27015P CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF
CGH09120F Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR	Original	PDF	CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
CGH27015-TB Abstract: CGH27015 CGH27015F JESD22 Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,	Original	PDF	CGH27015 CGH27015 CGH2701 27015P CGH27015-TB CGH27015F JESD22
Untitled Abstract: No abstract text available Text: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX	Original	PDF	CGH27015 CGH27015 CGH2701 27015P
Untitled Abstract: No abstract text available Text: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX	Original	PDF	CGH27015 CGH27015 CGH2701
Untitled Abstract: No abstract text available Text: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX	Original	PDF	CGH27015 CGH27015 CGH2701
STR W 5753 a Abstract: str w 5753 str 5753 CGH27015-TB 10UF 470PF CGH27015 CGH27015F 44019 Text: CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX	Original	PDF	CGH27015 CGH27015 CGH2701 27015P STR W 5753 a str w 5753 str 5753 CGH27015-TB 10UF 470PF CGH27015F 44019
CGH27015-TB Abstract: CGH27015 Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,	Original	PDF	CGH27015 CGH27015 CGH2701 27015P CGH27015-TB
Untitled Abstract: No abstract text available Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,	Original	PDF	CGH27015 CGH27015 CGH2701 27015P