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    CGH40025P Search Results

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    CGH40025P Price and Stock

    MACOM CGH40025P

    RF MOSFET HEMT 28V 440196
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    DigiKey CGH40025P Tray 250
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    • 1000 $139.6918
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    Mouser Electronics CGH40025P 6
    • 1 $191.71
    • 10 $179.55
    • 100 $179.55
    • 1000 $179.55
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    Richardson RFPD CGH40025P 80
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    • 100 $160.42
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    CGH40025P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STR F 6168

    Abstract: CGH40025-TB j326 CGH40025 Cree Microwave CGH40025F JESD22 40025F CGH40025P hemt .s2p
    Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		PDF CGH40025 CGH40025 CGH40025, CGH4002 40025F STR F 6168 CGH40025-TB j326 Cree Microwave CGH40025F JESD22 40025F CGH40025P hemt .s2p

    Untitled

    Abstract: No abstract text available
    Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		PDF CGH40025 CGH40025 CGH40025, CGH4002 40025F

    str w 6554 a

    Abstract: str 6554 str w 6554 STR 6754 RO4350 RO4350B 0618 Cree Microwave STR 6554 a CGH40025
    Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain


    Original     		PDF CGH40025 CGH40025 CGH40025, CGH4002 40025F str w 6554 a str 6554 str w 6554 STR 6754 RO4350 RO4350B 0618 Cree Microwave STR 6554 a

    STR F 6168

    Abstract: CGH40025 40025F CGH40025P CGH40025F CGH40025-TB
    Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		PDF CGH40025 CGH40025 CGH40025, CGH4002 40025F STR F 6168 40025F CGH40025P CGH40025F CGH40025-TB

    STR F 6168

    Abstract: CGH40025F CGH40025-TB CGH40025 JESD22
    Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		PDF CGH40025 CGH40025 CGH40025, CGH4002 40025F STR F 6168 CGH40025F CGH40025-TB JESD22

    STR F 6168 31 v power

    Abstract: STR F 6168 CGH40025P CGH40025 CGH40025F CGH40025-TB JESD22 rt 0608 MAG-S11 STR F 6168 31
    Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		PDF CGH40025 CGH40025 CGH40025, CGH4002 40025F STR F 6168 31 v power STR F 6168 CGH40025P CGH40025F CGH40025-TB JESD22 rt 0608 MAG-S11 STR F 6168 31

    str w 6556

    Abstract: str w 6556 a CGH40025-TB str 6556 str F 6256 10UF 470PF CGH40025 CGH40025F str 6708
    Text: PRELIMINARY CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain


    Original     		PDF CGH40025 CGH40025 CGH40025, CGH4002 40025F str w 6556 str w 6556 a CGH40025-TB str 6556 str F 6256 10UF 470PF CGH40025F str 6708

    CGH40025P

    Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D
    Text: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors


    Original     		PDF