CGHV22300MP Search Results

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Text: PRELIMINARY CGHV22300MP 300 W, 1800 -2200 MHz, GaN HEMT for LTE Cree’s CGHV22300MP is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22300MP ideal for