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    CLT41 Search Results

    CLT41 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CLT4140 Clairex Electronics 40 V, silicon NPN planar expitaxial phototransistor Scan PDF
    CLT4140 Clairex Electronics Silicon NPN Planar Epitaxial Phototransistors Scan PDF
    CLT4140 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    CLT4150 Clairex Electronics Silicon NPN Planar Epitaxial Phototransistors Scan PDF
    CLT4150 Clairex Electronics 40 V, silicon NPN planar expitaxial phototransistor Scan PDF
    CLT4150 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    CLT4160 Clairex Electronics 40 V, silicon NPN planar expitaxial phototransistor Scan PDF
    CLT4160 Clairex Electronics Silicon NPN Planar Epitaxial Phototransistors Scan PDF
    CLT4160 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    CLT4160 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    CLT4170 Unknown Discontinued Transistor Data Book 1975 Scan PDF

    CLT41 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    inverter transformer

    Abstract: lcd inverter ccfl transformer CLT4123 LCD inverter transformer ccfl transformer CLTP4123 CCFL BACKLIGHT INVERTER RoHS CTL4123 DC36V
    Text: Max. 8W, Medium & Large size LCD Monitors and vehicle applications 中型&大型液晶显示器 最大8W 和车载设备用液晶显示器 TYPE CLT4123 CLT4123 (Unit: mm) Description • Surface mount inverter transformer for CCFL driving. • Suitable as an inverter transformer for LCD backlight.


    Original     		PDF CLT4123 14inch CLTP4123. CLTP4123 CTL4123 inverter transformer lcd inverter ccfl transformer CLT4123 LCD inverter transformer ccfl transformer CLTP4123 CCFL BACKLIGHT INVERTER RoHS CTL4123 DC36V

    inverter transformer

    Abstract: lcd inverter ccfl transformer CLT4123 CTL4123 CCFL BACKLIGHT INVERTER RoHS ccfl lcd monitor
    Text: 85°C ;.Without.ballast.capacitance./.(85°C)；无镇流电容。 Max. 8W, Medium & Large size LCD Monitors and vehicle applications 最大8W, 中型&大型液晶显示器和汽车用液晶显示器 TYPE CLT4123 CLT4123 (Unit: mm) Description (Unit: mm)


    Original     		PDF CLT4123 14inch CLTP4123. LCD14LCD CLTP4123 CTL4123 DC36V 3200Vo-p/3sec 35kHz/IC inverter transformer lcd inverter ccfl transformer CLT4123 CTL4123 CCFL BACKLIGHT INVERTER RoHS ccfl lcd monitor

    CLT4123

    Abstract: CTL4123 inverter transformer CCFL BACKLIGHT INVERTER RoHS lcd ballast
    Text: Max. 8W, Medium & Large size LCD Monitors and vehicle applications TYPE CLT4123 大型液晶モニタ（14インチ以上最大6.5W/ch）／車載用液晶モニタ用インバータトランス CLT4123 Unit: mm Description • Surface mount inverter transformer for CCFL driving.


    Original     		PDF CLT4123 14inch CLTP4123. CLTP4123 CTL4123 DC36V 3200Vo-p/3sec CLT4123 CTL4123 inverter transformer CCFL BACKLIGHT INVERTER RoHS lcd ballast

    inverter transformer

    Abstract: lcd inverter ccfl transformer CCFL BACKLIGHT INVERTER RoHS ccfl lcd monitor CLT4123 CTL4123 LCD inverter transformer
    Text: CCFL Driving Inverter Transformers 冷陰極管駆動用インバータトランス Max. 8W, Medium & Large size LCD Monitors and vehicle applications 大型液晶モニタ（14インチ以上最大8W）／車載用液晶モニタ用インバータトランス


    Original     		PDF CLT4123 14inch CLTP4123. CLTP4123 CTL4123 DC36V 3200Vo-p/3sec 35kHz/IC inverter transformer lcd inverter ccfl transformer CCFL BACKLIGHT INVERTER RoHS ccfl lcd monitor CLT4123 CTL4123 LCD inverter transformer

    lcd inverter ccfl transformer

    Abstract: inverter transformer INVERTER TRANSFORMERS CCFL BACKLIGHT INVERTER RoHS
    Text: CCFL Driving Inverter Transformers 冷陰極管駆動用インバータトランス Max. 8W, Medium & Large size LCD Monitors and vehicle applications 大型液晶モニタ（14インチ以上最大8W）／車載用液晶モニタ用インバータトランス


    Original     		PDF CLT4123 14inch CLTP4123. CLTP4123 STANDARDP4123. CTL4123 CLT4123 DC36V 3200Vo-p/3sec lcd inverter ccfl transformer inverter transformer INVERTER TRANSFORMERS CCFL BACKLIGHT INVERTER RoHS

    Transistor 3TY

    Abstract: CLED400 CLT4140 CLT4150 CLT4160
    Text: CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit board or socket mounting. All 3 types have guaranteed


    OCR Scan     		PDF CLT4140 CLT4150 CLT4160 CLT4000 CLED400 300jusec. 214E711 70-c/i Transistor 3TY CLT4160

    CLED400

    Abstract: CLT4140 CLT4150 CLT4160 CLT400
    Text: CLAIREX ELECTRONICS DIV ITE D • 21457^ GQ007LG 5 T - ^ l - <ol CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit


    OCR Scan     		PDF GQ007LG CLT4140 CLT4150 CLT4160 CLT4000 CLED400 20mW/cm2 28544K. 300psec. CLT4160 CLT400

    LT414

    Abstract: LT4140 LT416
    Text: HOE 1> BHT'lTBfi 0001007 H O S E N I FASCO INDS/ SENISYS CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors 4 'l GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit


    OCR Scan     		PDF CLT4140 CLT4150 CLT4160 CLT4000 CLED400 LT414 LT4140 LT416

    Untitled

    Abstract: No abstract text available
    Text: CLED400 Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared emitting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern. The CLED400 is spectrally compatible with Clairex CLT4140,


    OCR Scan     		PDF CLED400 CLED400 CLT4140, CLT4160 CLR4180

    Bvn 10k

    Abstract: CLED400 CLR4180 CLT4140 CLT4160
    Text: CLED400 Gallium Arsenide Infrared Em itting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared em itting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern. The CLED400 is spectrally compatible with Clairex CLT4140,


    OCR Scan     		PDF CLED400 CLED400 CLT4140, CLT4160 CLR4180 Bvn 10k CLT4140

    CLED400

    Abstract: CLT4140 CLT4150 CLT4160
    Text: 4DE D B 3 4 =^ 73 6 0D Q 1 0 D 7 4 OSENI FASCO INDS/ SE NI SY S CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors G E N E R A L D E SC R IP T IO N — The CLT4000 series are photo tran sisto rs molded in a clear epoxy package. Lead fram e construction allows direct soldering into circuit


    OCR Scan     		PDF 0DQ10Q7 CLT4140 CLT4150 CLT4160 CLT4000 CLED400 300Hsec. CLT41 CLT4160

    CLT4160

    Abstract: No abstract text available
    Text: CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit board or socket mounting. All 3 types have guaranteed


    OCR Scan     		PDF CLT4140 CLT4150 CLT4160 CLT4000 CLED400 -25ma 300jusec. Em57t CLT4160

    TIL78

    Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
    Text: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE


    OCR Scan     		PDF

    TIL78

    Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF

    TIL78

    Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


    OCR Scan     		PDF NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A

    TIL78

    Abstract: photo transistor til78 OCP71 sp8309 sp8311 3n57 2N577 TIL-78 photo TIL78 1N4378
    Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised S p ecificatio ns # N o n-JE D E C ty p e m a n u fa ctu re d outsid e u :s . a . t S w itc h in g ty p e , also lis te d in S e c tio n 12


    OCR Scan     		PDF fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; BVCBO-15V; TIL78 photo transistor til78 OCP71 sp8309 sp8311 3n57 2N577 TIL-78 photo TIL78 1N4378

    TIL78

    Abstract: photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; BVCBO-15V; TIL78 photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222

    TIL78

    Abstract: photo transistor til78 TIL78 em
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF

    TIL78

    Abstract: MRD100 FSP165 BSW11 rt930 2N577 BC198A BFY47 10G1051 D10B1055
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; BVCBO-15V; TIL78 MRD100 FSP165 BSW11 rt930 2N577 BC198A BFY47 10G1051 D10B1055

    Untitled

    Abstract: No abstract text available
    Text: 4QE D Hi 3 4 ^ ^ 7 3 S D0Q1Q33 5 E3SENI FASCO INDS/ SENISYS CLED400 Gallium Arsenide Infrared Emitting Diode •*.092 - GENERAL DESCRIPTION — The CLED400 is a high intensity infrared emitting diode molded m a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern.


    OCR Scan     		PDF D0Q1Q33 CLED400 CLED400 CLT4140, CLT4160 CLR4180

    TRANSISTOR ED203

    Abstract: FND10 MAN-3A 2N3980 LA 4301 do ic 4532A free germanium Germanium drift transistor texas instruments LED Display TIL epitaxial mesa
    Text: T H E O P T O E L E C T R O N IC S D A T A B O O K Few people in the electronics industry realize that optoelectronics technology has a history which precedes the invention of the integrated circuit. It is also a relatively unknown fact that Texas instruments was a pioneer in the


    OCR Scan     		PDF 1N2175 TRANSISTOR ED203 FND10 MAN-3A 2N3980 LA 4301 do ic 4532A free germanium Germanium drift transistor texas instruments LED Display TIL epitaxial mesa

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


    OCR Scan     		PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    TIL149

    Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
    Text: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55


    OCR Scan     		PDF GQ133Ã CLA60. C-101-C CLA60AA C-101-B CLA60AB C-101-A CLA65. C-102 CLA65AA TIL149 HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W

    CLED400

    Abstract: CLR4180 CLT4140 CLT4160 DDD1033 DIODE s04 a
    Text: MOE D H 34^730 F AS C O INDS/ DD D1 0 3 3 S HISENI SENISYS CLED400 1 Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared em itting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern.


    OCR Scan     		PDF DDD1033 CLED400 CLED400 CLT4140, CLT4160 CLR4180 CLT4140 DIODE s04 a