SN74ACT16245DL
Abstract: act16245 texas cmos SN74ACT16245D EN-4088Z SN74HC00N SN74HC42D TEXAS INSTRUMENTS, Mold Compound TS-095 cmos testing abstract
Text: TEXAS INSTRUMENTS Notification of Wafer Thickness Reduction from 15 and 13 Mils to 11 Mils December 5, 1996 Abstract Texas Instruments Advanced System Logic is reducing wafer thickness from 15 and 13 mils to 11 mils for all CMOS and BiCMOS technologies in all Wafer Fabrication Sites producing these
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HC00N
ACT16245DL
ABT245ADB
SN74ACT16245DL
act16245
texas cmos
SN74ACT16245D
EN-4088Z
SN74HC00N
SN74HC42D
TEXAS INSTRUMENTS, Mold Compound
TS-095
cmos testing abstract
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rom radiation
Abstract: 80c32e 80C52 80C52E 80c52 basic 40Krad
Text: Evaluation Report Radiation Tolerance of the 80C32E/80C52E by Thierry CORBIERE Abstract The radiation tolerant version of the 8-bit micro controller 80C32E/80C52E has been tested against the two major concerns of the outer space environment, total dose and heavy ions.
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80C32E/80C52E
80C32E/80C52E
30Krad
30Mhz
80C32E.
80C52E
rom radiation
80c32e
80C52
80c52 basic
40Krad
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80C32E
Abstract: 73E-08 80C52E 80C52 rom radiation 0.8um cmos 87E-08
Text: SCMOS1 SCMOS1 Technology 80C32E/80C52E Microcontrollers – Tolerance to Radiation Abstract The radiation tolerant version of the 8–bit micro controller 80C32E/80C52E has been tested against the two major concerns of the outer space environment, total dose and heavy ions. 30Krad Si , 30MHz and latch–up
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80C32E/80C52E
30Krad
30MHz
80C32E.
80C32E
30MHz,
80C52E
73E-08
80C52
rom radiation
0.8um cmos
87E-08
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tl 4013
Abstract: 54ACT373 54ACT174 NS-28 watson smith 54AC163 54AC299 AN-989 AT22V10B C1995
Text: National Semiconductor Application Note 989 M Maher R Koga et al The Aerospace Corp April 1995 ABSTRACT A comparison of single event upset and latchup test results for devices operated at several bias levels from 2 5V to 6V is reported Vulnerability to SEU increased with decreasing
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20-3A
tl 4013
54ACT373
54ACT174
NS-28
watson smith
54AC163
54AC299
AN-989
AT22V10B
C1995
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MCT-2000
Abstract: 54AC161 54AC14 hughes radiation transistor SMD para inverter 54AC245 AN-927 C1995 aero transceiver K100L
Text: National Semiconductor Application Note 927 Michael Maher October 1994 ABSTRACT This paper examines the impact of using an Advanced CMOS product in a low voltage 3 3 VDC application which is subjected to a total ionizing dose environment Results from this investigation(1) demonstrate a significant
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krad
Abstract: 67025E TM1019 RAM SEU
Text: DPR SCMOS2 Technology Dual Port RAM 8K16 Tolerance to Radiation Abstract This paper proposes a review of the data gathered during radiation testing for the 8Kx16 dual port RAM manufactured using the Radiation Tolerant version of the 0.6µm SCMOS2/2 technology. Both Upset sensitivity
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8Kx16
50Krad
10Krad
35Krad
NT94055,
9849/92/NL,
krad
67025E
TM1019
RAM SEU
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8Kx16
Abstract: TM1019
Text: Evaluation Report SCMOS2 Radiation Tolerant Technology Dual Port RAM 8Kx16 Tolerance to Radiation by Thierry CORBIERE 1 Work partially funded by French Space Agency [1] Abstract This paper proposes a review of the data gathered during radiation testing for the 8Kx16 dual port
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8Kx16
NT94055,
9849/92/NL,
TM1019
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Dose
Abstract: TM1019 Single Supply Operation cross SCC22900
Text: SCMOS1/2 SCMOS1/2 Technology FIFO Family up to 72Kbit – Tolerance to Radiation 1. Abstract This paper proposes a review of the data gathered during heavy ion testing for the First In First Out RAM manufactured using the Radiation Tolerant version of the
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72Kbit)
50Krad
35Krad
EHR95056,
9849/92/NL,
11Mars
Dose
TM1019
Single Supply Operation cross
SCC22900
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35CL
Abstract: TM1019 79br
Text: Evaluation Report SCMOS1/2 Radiation Tolerant Technology FIFO Family up to 72Kbit Tolerance to Radiation by Thierry CORBIERE (1) Work partially funded by French Space Agency [1] Abstract This paper proposes a review of the data gathered during heavy ion testing for the First In First Out
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72Kbit)
50Krad
35Krad
january92
EHR95056,
9849/92/NL,
35CL
TM1019
79br
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60Co
Abstract: No abstract text available
Text: Intersil White Paper Specialty Products Space and Defense Wafer by Wafer Low Dose Rate Acceptance Testing in a Production Environment Abstract—This White Paper describes technical details of a wafer by wafer low dose rate acceptance testing program being implemented for all Intersil radiation hardened products. We
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74x244
Abstract: 74xxx240 74XXX244 617 connector 74xx*240 AN-737
Text: Fairchild Application Note 737 James W. Davison February 1998 ABSTRACT In recent years the speed and drive capability of advanced digital integrated circuitry has increased significantly. However, along with the advantages of increased speed and drive has come the consequence of greater device generated noise. Noise is an important consideration when designing systems with todays advanced logic circuits. Device
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74x244
Abstract: AN-737 AN-640 AN-680 74XXX244 wy 15D
Text: Fairchild Semiconductor Application Note November 1990 Revised June 2001 Device Generated Noise Measurement Techniques Abstract In recent years the speed and drive capability of advanced digital integrated circuitry has increased significantly. However, along with the advantages of increased speed and
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AN-737
74x244
AN-640
AN-680
74XXX244
wy 15D
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74x244
Abstract: 74XXX240 AN-640 AN-680 AN-737 C1995 P6201 74XXX244 AN64 AN-680 national
Text: National Semiconductor Application Note 737 James W Davison January 1991 ABSTRACT In recent years the speed and drive capability of advanced digital integrated circuitry has increased significantly However along with the advantages of increased speed and drive has come the consequence of greater device generated noise Noise is an important consideration when designing systems with todays advanced logic circuits Device
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74x244
74XXX240
AN-640
AN-680
AN-737
C1995
P6201
74XXX244
AN64
AN-680 national
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Dose
Abstract: transistor study Marconi radiation hard
Text: Investigations of Dose Rate Effects on CMOS Submicronic Technologies Thierry CORBIERE 1 – Jean Louis VENTURIN(2) MATRA MHS, Nantes France (2) CNES, Toulouse France (1) Abstract Majority of the TOTAL DOSE evaluations of MOS devices are made by using Cobalt 60 sources at dose rates
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300Krad
Dose
transistor study
Marconi radiation hard
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74AHC1G32DBV
Abstract: 74AHC1G00 74AHC1G04 SN74AHC1G00 SN74AHC1G08 SN74AHC1G32 SN74AHCT1G00 SN74AHCT1G08 SN74AHCT1G32 AHCT 125
Text: TEXAS INSTRUMENTS Informational Notification for Several AHC/AHCT Devices, Die Revision ‘C’ April 24, 1998 Abstract Texas Instruments has qualified several AHC/AHCT devices, die revision ‘C’ for the new DCK package. Die revision ‘C’ is a product redesign that includes a die shrink to fit the new
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transistor MN1
Abstract: NAND Qualification Reliability HC00D SN74HC00 texas instruments lot trace code EN-4088Z HC00 HCT00 SN74HCT00 S01-06800
Text: TEXAS INSTRUMENTS Qualification Notification for the SN74HC00 and SN74HCT00, Die Revision K August 20, 1997 Abstract Texas Instruments qualified the SN74HC00 and SN74HCT00 die revision K, to replace the SN74HC00 die revision F and the SN74HCT00 die revision G. Die revision K is a product
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SN74HC00
SN74HCT00,
SN74HCT00
S01-06800
transistor MN1
NAND Qualification Reliability
HC00D
texas instruments lot trace code
EN-4088Z
HC00
HCT00
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54ALS374
Abstract: 54HCT374 54AC00 seu boron rods 54AC04 seu 54AC374 p-channel mosfet 9240 54AC00 54ALS374/BRAJC 54AC04
Text: National Semiconductor Application Note 925 M C Maher January 1994 ABSTRACT Radiation test data is presented for different radiation environment as performed on National Semiconductor’s FACTTM Advanced CMOS microcircuit family Over twenty device types have been evaluated by independent investigators users and by National
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n-type-k100l
20-3A
54ALS374
54HCT374
54AC00 seu
boron rods
54AC04 seu
54AC374
p-channel mosfet 9240
54AC00
54ALS374/BRAJC
54AC04
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74AHCT04
Abstract: 74AHCT241 74HCT241 J1850 TMS470 CMOS to TTL logic level shifters 3.3v to 5v interface components cmos open collector
Text: Application Report SPNA087 3.3 Volt Microprocessors in an Industrial Environment Jim Childers TMS470 Microcontroller Abstract As new generations of microcontrollers lower their supply voltages from 5 volts to 3.3 volts and beyond, issues with interfacing and noise are increasing. This appnote presents cost-effective
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SPNA087
TMS470
SCAD001C
74AHCT04
74AHCT241
74HCT241
J1850
CMOS to TTL logic level shifters
3.3v to 5v interface components
cmos open collector
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SZZA036B
Abstract: cd4000 SCAA035 LVC16374 cd4000 logic devices SN54LVTH16646 SN74AHCT16541 SN74LVCC3245 SN74LVCC4245 JEP103A
Text: Application Report SZZA036B - May 2003 Understanding and Interpreting Standard-Logic Data Sheets Stephen M. Nolan and Jose M. Soltero Standard Linear & Logic ABSTRACT Texas Instruments TI standard-logic products data sheets include descriptions of functionality and electrical specifications for the devices. Each specification includes
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SZZA036B
cd4000
SCAA035
LVC16374
cd4000 logic devices
SN54LVTH16646
SN74AHCT16541
SN74LVCC3245
SN74LVCC4245
JEP103A
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EPIC-1S
Abstract: 74ACT245 EN-4088Z SN74ACT245N EN4088Z
Text: TEXAS INSTRUMENTS Notification for the Addition of CMOS Process to the Sherman Wafer Fabrication Site November 26, 1996 Abstract Texas Instrument’s Sherman Wafer Fabrication Facility has qualified the EPIC-1S CMOS process. The HC, AC, ACT, LV, AHCT and AHC product families are produced from this process and may be
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EN-4088Z
ACT245N
EPIC-1S
74ACT245
EN-4088Z
SN74ACT245N
EN4088Z
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SN74ALVC16425
Abstract: SN74ALVC164245A SN74ALVC164245 SN74LVC4245A SN74LVCC3245A SN74LVCC4245A
Text: Application Report SCEA021A - September 2002 Texas Instruments Voltage-Level-Translation Devices Nadira Sultana and Chris Cockrill Standard Linear & Logic ABSTRACT In electronic systems design, there is a need to provide an interface between different voltage
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SCEA021A
SN74LVCC3245A,
SN74LVC4245A,
SN74LVCC4245A,
SN74ALVC164245.
SN74ALVC16425
SN74ALVC164245A
SN74ALVC164245
SN74LVC4245A
SN74LVCC3245A
SN74LVCC4245A
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DAC121S101WGRQV
Abstract: Micro Linear cross DAC121S101 DAC121S101QML LM124 F-1192 DAC121S101QMLV output impedance calculation in LM124 JESD57
Text: Single Event Transient Response Dependence on Operating Conditions for a Digital to Analog Converter Kirby Kruckmeyer, Member, IEEE, James S. Prater, Bill Brown and Sandeepan DasGupta Abstract—The Single Event Effect SEE characterization of a Digital to Analog Converter (DAC) showed an unexpected Single
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SN74ALVC16425
Abstract: SCEA021 SN74ALVC4245 SN74ALVC4245A SN74LVCC3245A SN74ALVC164245 SN74LVC4245A SN74LVCC4245A
Text: Application Report SCEA021 - February 2001 Texas Instruments Voltage-Level-Translation Devices Nadira Sultana and Chris Cockrill Standard Linear & Logic ABSTRACT In electronic systems design, there is a need to provide an interface between different voltage
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SCEA021
SN74LVCC3245A,
SN74LVC4245A,
SN74LVCC4245A,
SN74ALVC164245.
SN74ALVC16425
SN74ALVC4245
SN74ALVC4245A
SN74LVCC3245A
SN74ALVC164245
SN74LVC4245A
SN74LVCC4245A
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AUC Family
Abstract: SN74AUC16245 SN74AUC245 SN74AUCH245 SCEA033
Text: Application Report SCEA033 - April 2003 Designing With TI Ultra-Low-Voltage CMOS AUC Octals and Widebus Devices Sagir Hasnain, Gene Hinterscher, and Will Hutchinson Standard Linear & Logic ABSTRACT System designers are continuously seeking ways to improve signal integrity, increase speed,
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SCEA033
AUC Family
SN74AUC16245
SN74AUC245
SN74AUCH245
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