MPSH24
Abstract: MMBTH24 MPSH11
Text: MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator
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MPSH24/MMBTH24
100mA
300MHz,
MPSH11
OT-23
MPSH24
MMBTH24
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MMBTH24
Abstract: MPSH11 MPSH24
Text: MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator
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MPSH24/MMBTH24
100mA
300MHz,
MPSH11
OT-23
MMBTH24
MPSH24
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MPSH34
Abstract: MPSH11
Text: MPSH34 MPSH34 NPN General Purpose Amplifier • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET
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MPSH34
100mA
300MHz,
MPSH11
MPSH34
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MMBTH34
Abstract: MPSH11
Text: MMBTH34 MMBTH34 NPN General Purpose Amplifier • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers.
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MMBTH34
100mA
300MHz,
MPSH11
OT-23
MMBTH34
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MMBTH24
Abstract: MPSH11 MPSH24 V30I
Text: MPSH24 MMBTH24 C E C TO-92 BE B SOT-23 Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications
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MPSH24
MMBTH24
OT-23
MPSH11
MPSH24
MMBTH24
V30I
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MPSH24
Abstract: MMBTH24 MPSH11
Text: N MPSH24 MMBTH24 C E C TO-92 BE B SOT-23 Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications
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MPSH24
MMBTH24
OT-23
MPSH11
MPSH24
MMBTH24
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Untitled
Abstract: No abstract text available
Text: VAM 120 120 Watts, 27 Volts, Class AB Defcom 100 - 150 MHz GENERAL DESCRIPTION CASE OUTLINE The VAM 120 is a COMMON EMITTER device designed to operae in a collector modulated VHF power amplifier. It is a common emitter device, optimized for use in the 100-150 MHz range.
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MPSH11
Abstract: MPS-H11 transistor mark l6 MMBTH11 Q100 Z-235 Ohmite RF transistor x vs L1245 P4 transistor
Text: MPSH11 MMBTH11 C E C TO-92 BE SOT-23 B Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving
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MPSH11
MMBTH11
OT-23
MPSH11
MPS-H11
transistor mark l6
MMBTH11
Q100
Z-235
Ohmite RF
transistor x vs
L1245
P4 transistor
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15V 5A Power Supply Schematic
Abstract: 850C TPA02 TPA02A THALER CORPORATION ATPA02
Text: TPA02/ TPA02A Power Operational Amplifier THALER CORPORATION. Represented by: Rhopoint Components Ltd. www.rhopointcomponents.com FEATURES EQUIVALENT SCHEMATIC • COMMON COLLECTOR OUTPUT STAGE · CLOSE TO RAIL OUTPUT – ±1.2V TO RAIL · HIGH SLEW RATE – 20V/µsec.
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TPA02/
TPA02A
600ns
350kHz
TPA02
TPA02A
TPA02/02A
15V 5A Power Supply Schematic
850C
THALER CORPORATION
ATPA02
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norton amplifier
Abstract: LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode
Text: National Semiconductor Application Note 278 Timothy T. Regan September 1981 Why Another Norton Amplifier? there is no Miller effect on the collector-to-base capacitance of the input transistor. Also, there is no collector-to-emitter parasitic feedback in the common base configured transistor, Q2, so the high frequency signal appearing at the output
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AN-278
norton amplifier
LM3900 VCO
jfet discrete differential transistor
jfet cascode
internal structure of ic lm3900
ULTRA HIGH SPEED FREQUENCY DIVIDER
LM359
operational amplifier discrete schematic
norton op. amp
Designing Type II Compensation for Current Mode
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TH9030
Abstract: No abstract text available
Text: TH9030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI TH9030 is Designed for General Purpose Power oscillator Amplifier Applications up to 2.3 GHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • Common Collector • Hermetic Microstrip Package
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TH9030
TH9030
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NEX230165
Abstract: nex2301
Text: NEX230165 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI NEX230165 is Designed for General Purpose Power oscillator Amplifier Applications up to 2.3 GHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • Common Collector • Hermetic Microstrip Package
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NEX230165
NEX230165
nex2301
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2SC3611
Abstract: No abstract text available
Text: Power Transistors 2SC3611 Silicon NPN epitaxial planar type For video amplifier Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 3.8±0.3 • High transition frequency fT • Small collector output capacitance Common base, input open circuited Cob • Wide current range
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2SC3611
O-126B
2SC3611
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850C
Abstract: TPA02 TPA02A TO-38 SCHEMATIC DIAGRAM POWER SUPPLY 12v 5A
Text: TPA02/ TPA02A Power Operational Amplifier THALER CORPORATION • 2015 N. FORBES BOULEVARD • TUCSON, AZ. 85745 • 520 882-4000 FEATURES EQUIVALENT SCHEMATIC • COMMON COLLECTOR OUTPUT STAGE · CLOSE TO RAIL OUTPUT – ±1.2V TO RAIL · HIGH SLEW RATE – 20V/µsec.
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TPA02/
TPA02A
600ns
350kHz
TPA02
TPA02A
TPA02/02A
850C
TO-38
SCHEMATIC DIAGRAM POWER SUPPLY 12v 5A
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rf transistor mark code H1
Abstract: CBVK741B019 F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 D3000
Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH11
MMBTH11
MPSH11
OT-23
rf transistor mark code H1
CBVK741B019
F63TNR
MMBTH11
PN2222N
Q100
Z-235
D3000
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CBVK741B019
Abstract: F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 transistor 26
Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH11
MMBTH11
MPSH11
OT-23
CBVK741B019
F63TNR
MMBTH11
PN2222N
Q100
Z-235
transistor 26
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Untitled
Abstract: No abstract text available
Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH11
MMBTH11
MPSH11
OT-23
MPSH11/MMBTH11,
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MPS-H24
Abstract: MPSH24
Text: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 mA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH24
MMBTH24
MPSH24
OT-23
MPSH11
MPS-H24
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ic nn 5198 k
Abstract: nn 5198 k Transistor C 5196 fcm 10.7 mhz transistor s34 ic nn 5198 r Transistor C 5198 MMBTH11 MPSH11 Q100
Text: I MMBTH11 Discrete P O W ER & S ig n a l Technologies National MPSH11 Semiconductor'“ MPSH11 NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 fiA to 10 mA range to 300 MHz, and low frequency drift common-base
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MPSH11
MMBTH11
b5D1130
ic nn 5198 k
nn 5198 k
Transistor C 5196
fcm 10.7 mhz
transistor s34
ic nn 5198 r
Transistor C 5198
MMBTH11
MPSH11
Q100
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Untitled
Abstract: No abstract text available
Text: B iM E D N P U C T O R « MPSH11 MMBTH11 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 pA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving
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MPSH11
MMBTH11
MPSH11
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HN3C03FU
Abstract: tuner uhf Ghz hn3c03
Text: TOSHIBA HN3C03FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C03FU Unit in mm TV TUNER, UHF OSCILLATOR APPLICATION TV UHF RF AMPLIFIER APPLICATION 2.1 ± 0.1 COMMON COLLECTOR • Including Two Devices in US6 • Output Capacitance : C0b = 1.2pF (Typ.)
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HN3C03FU
HN3C03FU
tuner uhf Ghz
hn3c03
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HN3C03FU
Abstract: No abstract text available
Text: TOSHIBA HN3C03FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C03FU Unit in mm TV TUNER, UHF OSCILLATOR APPLICATION TV UHF RF AMPLIFIER APPLICATION 2.1 ± 0.1 COMMON COLLECTOR • Including Two Devices in US6 • Output Capacitance : C0b = 1.2pF (Typ.)
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HN3C03FU
HN3C03FU
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transistor s34
Abstract: MPSH11 MPS-H11
Text: è* Semiconductor MPSH11 I MMBTH11 D iscrete PO W ER & S ig n a l Technologies National MPSH11 SOT-23 M ark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 p A to
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MMBTH11
MPSH11
OT-23
bSD113D
transistor s34
MPSH11
MPS-H11
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HN3C03FU
Abstract: No abstract text available
Text: TO SH IBA HN3C03FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C03FU Unit in mm TV TUNER, UHF OSCILLATOR APPLICATION TV UHF RF AMPLIFIER APPLICATION 2.1 ± 0.1 COMMON COLLECTOR • Including Two Devices in US6 • Output Capacitance : C0b = 1.2pF (Typ.)
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HN3C03FU
N3C03FU
HN3C03FU
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