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    MMBTH11 Price and Stock

    onsemi MMBTH11

    RF TRANS NPN 25V 650MHZ SOT-23-3
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    Rochester Electronics MMBTH11 41,900 1
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    Rochester Electronics LLC MMBTH11

    RF TRANS NPN 25V 650MHZ SOT-23-3
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    FLIP ELECTRONICS MMBTH11

    RF TRANS NPN 25V 650MHZ SOT-23-3
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    Fairchild Semiconductor Corporation MMBTH11

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    MMBTH11 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBTH11 Fairchild Semiconductor NPN RF Transistor Original PDF
    MMBTH11 Fairchild Semiconductor NPN RF Transistor Original PDF
    MMBTH11 Fairchild Semiconductor NPN RF Transistor Scan PDF
    MMBTH11 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    MMBTH11 National Semiconductor Sulface Mount Transistors Scan PDF
    MMBTH11 National Semiconductor Surface Mount Transistors Scan PDF
    MMBTH11 National Semiconductor NPN RF Transistor Scan PDF

    MMBTH11 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		MPSH11 MMBTH11 MPSH11 OT-23 MPSH11/MMBTH11, PDF

    transistor 26

    Abstract: MMBTH11 MPSH11 Q100 Z-235 L1245 transistor t 270
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		MPSH11 MMBTH11 MPSH11 OT-23 MPSH11/MMBTH11, transistor 26 MMBTH11 Q100 Z-235 L1245 transistor t 270 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTH11 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)25è V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)350m Minimum Operating Temp (øC) Maximum Operating Temp (øC)135þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)


    Original     		MMBTH11 Freq650M PDF

    MPSH11

    Abstract: MPS-H11 transistor mark l6 MMBTH11 Q100 Z-235 Ohmite RF transistor x vs L1245 P4 transistor
    Text: MPSH11 MMBTH11 C E C TO-92 BE SOT-23 B Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving


    Original     		MPSH11 MMBTH11 OT-23 MPSH11 MPS-H11 transistor mark l6 MMBTH11 Q100 Z-235 Ohmite RF transistor x vs L1245 P4 transistor PDF

    transistor C 245 b

    Abstract: No abstract text available
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C C B E TO-92 B SOT-23 E Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 mA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		MPSH11 MMBTH11 MPSH11 OT-23 transistor C 245 b PDF

    rf transistor mark code H1

    Abstract: CBVK741B019 F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 D3000
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		MPSH11 MMBTH11 MPSH11 OT-23 rf transistor mark code H1 CBVK741B019 F63TNR MMBTH11 PN2222N Q100 Z-235 D3000 PDF

    CBVK741B019

    Abstract: F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 transistor 26
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		MPSH11 MMBTH11 MPSH11 OT-23 CBVK741B019 F63TNR MMBTH11 PN2222N Q100 Z-235 transistor 26 PDF

    MMBT5770

    Abstract: KSC2223 KSC2756 KSC2757 KSC3123 KST10 KST5179 MMBT5179 MMBT918 MMBTH10
    Text: Discrete Small Signal RF Products VCEO V VCBO (V) VEBO (V) IC fT hFE Max (A) (MHz) Min Max @VCE (V) Saturation Voltage @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SOT-23 NPN Configuration KST5179 12 20 2.5 0.05 900 25 - 1 3 0.4 10 1 MMBT5179 12 20 2.5 0.05


    Original     		OT-23 KST5179 MMBT5179 MMBT918 KSC2757 MMBT5770 KSC2223 KSC2756 KSC1675 MPSH24 MMBT5770 KSC2223 KSC2756 KSC2757 KSC3123 KST10 KST5179 MMBT5179 MMBT918 MMBTH10 PDF

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes PDF

    PNP 3-224

    Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
    Text: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11


    Original     		PN100 PN100A MMBT100 MMBT100A PN200 PN200A MMBT200 MMBT200A FPN330 FPN330A PNP 3-224 NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A PDF

    8F SOT-23 PNP on

    Abstract: 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor
    Text: Discrete POWER & Signal Technologies Surface Mount Diodes Computer Diodes by Descending BV LEADLESS GLASS PACKAGE Device No. Package No. BV (V) Min IR (nA) Max @ VR VF (V) (V) Min C trr (mA) (pF) Max (ns) Max 1 10 4 0.72 5 @ Max IF Test Conditions Process


    Original     		FDLL914 LL-34 FDLL914A FDLL914B FDLL916 FDLL916A 8F SOT-23 PNP on 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    mpsh10

    Abstract: NPN RF TRANSISTORS PSH10 MPS-H10 national MMBTH 30
    Text: MPSH10/MMBTH10/MPSH11 /MMBTH11 a National Semiconductor MPSH10 MPSH 11 MMBTH10 MMBTH 11 / TO-9 2 T L /G /1 0 1 0 0 -5 T L /G /1 0 1 0 0 -3 NPN RF Transistors Electrical Characteristics T a = 25"C unless otherw ise noted Parameter Symbol Min Max Units OFF CHARACTERISTICS


    OCR Scan     		MPSH10/MMBTH10/MPSH1 /MMBTH11 MPSH10 MMBTH10 100/u PS-H10 MPS-H11 NPN RF TRANSISTORS PSH10 MPS-H10 national MMBTH 30 PDF

    transistor s34

    Abstract: MPSH11 MPS-H11
    Text: è* Semiconductor MPSH11 I MMBTH11 D iscrete PO W ER & S ig n a l Technologies National MPSH11 SOT-23 M ark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 p A to


    OCR Scan     		MMBTH11 MPSH11 OT-23 bSD113D transistor s34 MPSH11 MPS-H11 PDF

    ic nn 5198 k

    Abstract: nn 5198 k Transistor C 5196 fcm 10.7 mhz transistor s34 ic nn 5198 r Transistor C 5198 MMBTH11 MPSH11 Q100
    Text: I MMBTH11 Discrete P O W ER & S ig n a l Technologies National MPSH11 Semiconductor'“ MPSH11 NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 fiA to 10 mA range to 300 MHz, and low frequency drift common-base


    OCR Scan     		MPSH11 MMBTH11 b5D1130 ic nn 5198 k nn 5198 k Transistor C 5196 fcm 10.7 mhz transistor s34 ic nn 5198 r Transistor C 5198 MMBTH11 MPSH11 Q100 PDF

    Untitled

    Abstract: No abstract text available
    Text: B iM E D N P U C T O R « MPSH11 MMBTH11 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 pA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving


    OCR Scan     		MPSH11 MMBTH11 MPSH11 PDF

    MMBTH10

    Abstract: t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national
    Text: NATL SEMICOND HE DISCRETE D I bS01130 0Q37273 7 | National Semiconductor <n T -3 I-I7 £ IO < ro MPSA92 MPSW92 MMBTA92 I<o ro TO-236 SOT-23 TL/G/10100-5 PNP High Voltage Amplifier Electrical Characteristics Ta Symbol = 25°C unless otherwise noted Parameter


    OCR Scan     		MPSW92 bS01130 0Q37273 r-31-n MMBTA92 TL/G/10100-1 O-226AE O-236 OT-23) TL/G/10100-5 MMBTH10 t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national PDF

    TO236

    Abstract: MMBTH30 to-236
    Text: NATL National æ m ISemiconductor Surface Mount Transistors SEMICOND RF Amplifiers and Oscillators— NPN Type No. Case Style v CEO V ebo V (V) Min Min CBO Vcb (" A ) Max ' ' 8 1^4 Vce f>FE Min Max (mA) (V) 12 2.5 20 15 25 MMBTH10 TO-236 (49) 30 25


    OCR Scan     		O-236 MMBTH10 MMBTH30 MMBTH11 TO236 to-236 PDF

    Untitled

    Abstract: No abstract text available
    Text: _ _ _ . böt T > U t.SD113D 0 0 3 1 5 2 8 ISA « N S C S RF Amplifiers Devices NPN PNP NATL SEnlC0N] discrete) h fE V CE0(Sutt) »C (Volts) Min (mA) Max Min Iq ^ c e mA (MHZ) Min C#|, PF Max *T V NF (dB) @ f Package Max MHz 2N3663 12 50 20 8.0 10 700


    OCR Scan     		SD113D 2N3663 2N5179 MMBT5179 MPS5179 2N5770 2N918 MMBT918 PN918 BF199 PDF

    PN3563

    Abstract: MPSH24 2N3663 2N5179 2N5770 2N918 BF199 MMBT5179 MMBT918 MPS5179
    Text: _ _ - . tat B RF Amplifiers Devices V CE0{Sint h hFE @ Iq Vjj Volts) Min (mA) Max 2N3663 12 50 20 8.0 2N5179 12 50 25 3.0 NPH PNP Min mA • t.SD113G 0 0 3 ^ 5 2 0 ISA ■ NSCS NATL SEnlC0N]> (discrete) *T C#|, NF (dB) @ f (MHZ) Min PF Max Max 10 700


    OCR Scan     		SD113D 2N3663 T0-92 2N5179 MMBT5179 O-236* MPS5179 2N5770 2N918 PN3563 MPSH24 2N3663 2N5179 2N5770 2N918 BF199 MMBT5179 MMBT918 MPS5179 PDF

    Untitled

    Abstract: No abstract text available
    Text: S E :M i O O N D U C T O R MPSH11 SOT-23 Mark: 3G NPN RF Transistor This device is designed for com m on-em itter low noise am plifier and m ixer applications with collector currents in the 100 |^A to 10 m A range to 300 MHz, and low frequency drift com m on-base


    OCR Scan     		MPSH11 MMBTH11 MPSH11 OT-23 Z-235 PDF

    common collector amplifier circuit designing

    Abstract: transistor mark l6 MMBTH11 MPSH11 transistor BF 245
    Text: HEVICCNDUCTOR - MPSH11 NPN RF Transistor This device is designed for com m on-em itter low noise amplifier and m ixer applications with collector currents in the 100 ¡iA to 10 mA range to 300 MHz, and low frequency drift comm on-base VH F oscillator applications with high output levels for driving


    OCR Scan     		MPSH11 MMBTH11 OT-23 common collector amplifier circuit designing transistor mark l6 MMBTH11 transistor BF 245 PDF