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    SF-NDCCGJ28GB-003M Amphenol Cables on Demand Amphenol SF-NDCCGJ28GB-003M 3m SFP28 Cable - Amphenol 25-Gigabit Ethernet SFP28 Direct Attach Copper Cable (9.8 ft) - 26 AWG (Low-Loss Version) Datasheet
    SF-NDCCGJ28GB-002M Amphenol Cables on Demand Amphenol SF-NDCCGJ28GB-002M 2m SFP28 Cable - Amphenol 25-Gigabit Ethernet SFP28 Direct Attach Copper Cable (6.6 ft) - 26 AWG (Low-Loss Version) Datasheet
    SF-NDCCGJ28GB-005M Amphenol Cables on Demand Amphenol SF-NDCCGJ28GB-005M 5m SFP28 Cable - Amphenol 25-Gigabit Ethernet SFP28 Direct Attach Copper Cable (16.4 ft) - 26 AWG Datasheet
    SF-NDAAFJ100G-002M Amphenol Cables on Demand Amphenol SF-NDAAFJ100G-002M 2m (6.6') 100GbE QSFP28 Cable - Amphenol 100-Gigabit Ethernet Passive Copper QSFP Cable (SFF-8665 802.3bj) - QSFP28 to QSFP28 (26-AWG Low-Loss) Datasheet
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet

    COPPER BOND WIRE MOTOROLA Datasheets Context Search

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    AN1741

    Abstract: IC AN1741 pin configuration 20-PIN HC05 motorola application note Nippon capacitors 23/M68HC05PFB
    Text: 1 Order this document by AN1741/D Motorola Semiconductor Application Note AN1741 In-Circuit and Emulation Considerations for MC68HC05JJ/JP Series Microcontrollers By Mark L. Shaw Member, Technical Staff, Sensor Products Division Transportation Systems Group


    Original     		PDF AN1741/D AN1741 MC68HC05JJ/JP AN1741 IC AN1741 pin configuration 20-PIN HC05 motorola application note Nippon capacitors 23/M68HC05PFB

    JESD51-1

    Abstract: "thermal via" QFN "100 pin" PACKAGE thermal resistance QFN PACKAGE thermal resistance JESD51-3 SLMA002 AN569 JESD51-2
    Text: Application Note: HFAN-08.1 Rev 0; 11/01 Thermal Considerations of QFN and Other Exposed-Paddle Packages Note: This application note is a summary and compilation of information based on the references mentioned at the end of this document. This information is neither tested


    Original     		PDF HFAN-08 4hfan081 JESD51-7: JESD51-8: JESD51-9: JESD51-10: SZZA017A, JESD51-1 "thermal via" QFN "100 pin" PACKAGE thermal resistance QFN PACKAGE thermal resistance JESD51-3 SLMA002 AN569 JESD51-2

    map sensor

    Abstract: motorola ECu microprocessor air mass flow sensor MAF ECU ford focus ford ka ecu "Pressure Transducer" KA SENSORS signal conditioning circuits of map sensor NOx sensor Ford Common Rail Fuel injector maf ford
    Text: MOTOROLA Order this document by AN1620/D SEMICONDUCTOR APPLICATION NOTE AN1620 A Monolithic Integrated Solution for MAP Applications ABSTRACT A monolithic sensing solution for manifold absolute pressure MAP is presented. This work includes examination of design, fabrication, temperature compensation, packaging


    Original     		PDF AN1620/D AN1620 map sensor motorola ECu microprocessor air mass flow sensor MAF ECU ford focus ford ka ecu "Pressure Transducer" KA SENSORS signal conditioning circuits of map sensor NOx sensor Ford Common Rail Fuel injector maf ford

    EMCO 3115

    Abstract: emco 3106 NARDA 8719 3106 emco lisn emco AN1622 map sensor Abstract ignition 3115 Horn antenna Nippon capacitors
    Text: MOTOROLA Order this document by AN1622/D SEMICONDUCTOR APPLICATION NOTE AN1622 EMC Considerations for Automotive Sensors Prepared by: Dragan Mladenovic, Rajan Verma, and Randy Frank Motorola Semiconductor Products Sector integrated signal conditioning have been qualified for


    Original     		PDF AN1622/D AN1622 EMCO 3115 emco 3106 NARDA 8719 3106 emco lisn emco AN1622 map sensor Abstract ignition 3115 Horn antenna Nippon capacitors

    AN1907

    Abstract: MRF9045MR1 TO270
    Text: MOTOROLA Order this document by AN1907/D SEMICONDUCTOR APPLICATION NOTE AN1907 Surface Mount Solder Attach Method for the MRF9045MR1 in the TO-270 Plastic RF Package Prepared by: Wendi Stemmons, Jerry Mason, Rich Wetz, Tom Woods, Mahesh Shah and David Runton


    Original     		PDF AN1907/D AN1907 MRF9045MR1 O-270 AN1907 TO270

    ML12149-5P

    Abstract: LANSDALE SEMICONDUCTOR MA393 MC12149 MC12149D ML12149 ML12210 so8 Wire bond
    Text: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO


    Original     		PDF ML12149 MC12149 ML12149 ML12210 ML12149-5P LANSDALE SEMICONDUCTOR MA393 MC12149 MC12149D so8 Wire bond

    DL140

    Abstract: MC34268 MCCS142235 MCCS142236 MCCS142237 AN1408 AN-1408 bsy36
    Text: Order this document by AN1408/D AN1408 Application Note Power Dissipation for Active SCSI Terminators Prepared by Lance K. Packer Strategic Marketing/Applications Engineering This revised application note provides information on the power dissipation and resultant chip junction temperatures


    Original     		PDF AN1408/D AN1408 MCCS142236, MCCS142237 18-bits AN1408/D* DL140 MC34268 MCCS142235 MCCS142236 AN1408 AN-1408 bsy36

    Untitled

    Abstract: No abstract text available
    Text: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO


    Original     		PDF ML12149 MC12149 ML12149 ML12210

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using


    Original     		PDF MC12149 1300MHz. MC12202 MC12149/D* MC12149/D DL140

    mecl system design handbook

    Abstract: motorola mecl system design handbook 1 half inch countersunk RG58/U Bnc connector MC10116 application HB205/d mc10101 MC10115 application MECL III Series mc10h141
    Text: TND309 General Information for MECL 10Ht and MECL 10Kt http://onsemi.com APPLICATION NOTE High–Speed Logic . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MECL Products . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MECL Family Comparison . . . . . . . . . . . . . . . . . . 3


    Original     		PDF TND309 r14525 TND309/D mecl system design handbook motorola mecl system design handbook 1 half inch countersunk RG58/U Bnc connector MC10116 application HB205/d mc10101 MC10115 application MECL III Series mc10h141

    MAD130P

    Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching


    Original     		PDF MMAD1108 De218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MAD130P 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72

    MSC2404

    Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


    Original     		PDF MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72

    BF245

    Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30


    Original     		PDF MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568

    MMBF4856

    Abstract: BC237 bf244 BC177 pnp transistor BF245 motorola MMBT8599L
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Switching Transistor MPQ3906 PNP Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 PNP 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage


    Original     		PDF MPQ3906 Therm218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MMBF4856 BC237 bf244 BC177 pnp transistor BF245 motorola MMBT8599L

    P4855-1

    Abstract: Ablestik Transistor Substitution 1993 2088AB belleville washer 33702 SIL-PAD density 208ab 2088a 814a
    Text: Order this document by AN1040/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1040 MOUNTING CONSIDERATIONS FOR POWER SEMICONDUCTORS Prepared by: Bill Roehr Staff Consultant, Motorola Semiconductor Sector TABLE OF CONTENTS Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF AN1040/D AN1040 P4855-1 Ablestik Transistor Substitution 1993 2088AB belleville washer 33702 SIL-PAD density 208ab 2088a 814a

    MA393

    Abstract: MC12147 MC12147D MC12149 MC12202 motorola varactor
    Text: Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an


    Original     		PDF MC12147/D MC12147 MC12147 MC12202 MA393 MC12147D MC12149 motorola varactor

    construction of varactor diode

    Abstract: MA393 varactor diode high frequency MC12147 MC12147D MC12202
    Text: Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an


    Original     		PDF MC12147/D MC12147 MC12147 MC12202 construction of varactor diode MA393 varactor diode high frequency MC12147D

    MC12149

    Abstract: MA393 MC12149D MC12202
    Text: Order this document by MC12149/D Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an


    Original     		PDF MC12149/D MC12149 MC12202 MC12149 MA393 MC12149D

    construction of varactor diode

    Abstract: MA393 MC12147 MC12147D MC12147SD MC12202 Nippon capacitors
    Text: Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an


    Original     		PDF MC12147/D MC12147 MC12147 MC12202 construction of varactor diode MA393 MC12147D MC12147SD Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc.Order this document by MC12149/D MC12149 Low Power Voltage Controlled Oscillator Buffer LOW POWER VOLTAGE CONTROLLED OSCILLATOR BUFFER SEMICONDUCTOR TECHNICAL DATA NOTE: The MC12149 is NOT suitable as a crystal oscillator. •


    Original     		PDF MC12149/D MC12149 MC12149 MC12202

    k1 M 1208 Q switch

    Abstract: mc12149 csr rf construction of varactor diode MA393 MC12149D MC12149SD MC12202 Nippon capacitors
    Text: Order this document by MC12149/D Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an


    Original     		PDF MC12149/D MC12149 MC12202 MC12149 k1 M 1208 Q switch csr rf construction of varactor diode MA393 MC12149D MC12149SD Nippon capacitors

    motorola MN transistor

    Abstract: FR4 dielectric constant vs temperature AR338
    Text: AR338 METAL-BACKED BOARDS IMPROVE THERMAL PERFORMANCE OF POWER By PCIM Staff With Contributions by Herb Fick/Bergquist Company Al Pshaenich and Dave Hollander/Motorola Semiconductor Scott LindblomTexas Instruments Reprinted from Powerconversion & Intelligent Motion,


    OCR Scan     		PDF AR338 -------AR338/D AR338/D motorola MN transistor FR4 dielectric constant vs temperature AR338

    Nippon capacitors

    Abstract: MC12149
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using


    OCR Scan     		PDF MC12149 1300MHz. MC12202 3PHX32323-- MC12149/D Nippon capacitors

    so8 Wire bond

    Abstract: No abstract text available
    Text: Order this document by MC12149/D M O T O R O LA Low Power V oltage Controlled O scillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the d e s ire d fre q u e n c y o f o p e ra tio n . The V C O is re a liz e d u sin g an


    OCR Scan     		PDF MC12149/D MC12149 MC12202 so8 Wire bond