transistor marking N1
Abstract: N11 TRANSISTOR MARKING CODE marking N11 MSA1022 n1 a marking
Text: LESHAN RADIO COMPANY, LTD. PNP RF Amplifier Transistor Surface Mount MSA1022–CT1 COLLECTOR 3 3 2 1 CASE 2 BASE 318D–03, STYLE1 SC–59 1 EMITTER MAXIMUM RATINGS T A = 25 °C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MSA1022
transistor marking N1
N11 TRANSISTOR MARKING CODE
marking N11
n1 a marking
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MSC2404
Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage
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MSA1022-CT1
Emitte218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MPF3821
BC237
MPS8093
BCY72
MMBF4856
MAD130P
MPS3866
bcy71 ALTERNATIVE
BSS72
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transistor marking N1
Abstract: D marking PNP MSA1022 marking code n11 marking N11 n1 a marking
Text: PNP RF Amplifier Transistor Surface Mount MSA1022–CT1 COLLECTOR 3 3 1 2 CASE 2 BASE 318D–03, STYLE1 SC–59 1 EMITTER MAXIMUM RATINGS T A = 25 °C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous
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MSA1022
transistor marking N1
D marking PNP
marking code n11
marking N11
n1 a marking
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MSA1022
Abstract: MSA1022-CT1 SMD310 motorola surface mount marking code MOTOROLA DATE CODE transistor marking code motorola ic
Text: MOTOROLA Order this document by MSA1022–CT1/D SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage
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MSA1022
MSA1022-CT1
MSA1022-CT1/D*
MSA1022-CT1
SMD310
motorola surface mount marking code
MOTOROLA DATE CODE transistor
marking code motorola ic
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Untitled
Abstract: No abstract text available
Text: MSA1022CT1 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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MSA1022CT1
Freq150M
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Untitled
Abstract: No abstract text available
Text: MSA1022BT3 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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MSA1022BT3
Freq150M
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Untitled
Abstract: No abstract text available
Text: MSA1022BT1 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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MSA1022BT1
Freq150M
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Untitled
Abstract: No abstract text available
Text: MSA1022CT3 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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MSA1022CT3
Freq150M
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transistor mosfet buv18a
Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9
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BC337 BC547
Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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MDC5000T1
MDC3105LT1
BC337 BC547
MSB81T1
MBT3904DW9T1
marking 6AA SOD
MVAM115
automatic stabilizer circuit diagram range 210 to 250 volts
zt751
MBT3904DW9
transistor 2N4125
CT BC547 TRANSISTOR PIN DIAGRAM
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BF245
Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30
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MSC2295-BT1
MSC2295-CT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BF245
BC237
mps8093
bf244
MSA1022
msc2295
MAD1107P
MPS6568
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stencil
Abstract: BC237 automatic heat detector project report BC393 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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BAT54T1
Ju218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
stencil
BC237
automatic heat detector project report
BC393 equivalent
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BC237
Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device
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SC-70/SOT-323
Spa218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
level shifter 2N5401
2771 040 0002
MUN5214T1
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bs170 replacement
Abstract: BC237 BC30 transistor K 2056
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)
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BS170
226AA)
DS218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
bs170 replacement
BC237
BC30
transistor K 2056
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BC237
Abstract: MPS-A70 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage
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MPSA70
226AA)
CHARACTERI218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
MPS-A70 equivalent
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bc182 equivalent 2n2907
Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO
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BC182
BC183
BC184
BC184
226AA)
Junction218A
MSC1621T1
MSC2404
bc182 equivalent 2n2907
bc183 equivalent
BC237
BF245
bc184 equivalent
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transistor MPS5771
Abstract: BC237 bfw4
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit
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MMBD914LT1
236AB)
DE218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
transistor MPS5771
BC237
bfw4
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P2d MARKING CODE
Abstract: H2A transistor ev 2816 BC237 transistor 2N2906
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage
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PZTA92T1
261AA
ELECTRI218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
P2d MARKING CODE
H2A transistor
ev 2816
BC237
transistor 2N2906
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WT transistor
Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc
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MMBF5484LT1
236AB)
C218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
WT transistor
BC237
S11S
2n441
BF244B
2N3799
JFET BF245
C4 SOT-323
2N3819 MOTOROLA
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2N5457 MOTOROLA
Abstract: 2N5457 equivalent BC237 transistor 2N5457
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc
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2N5457
226AA)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N5457 MOTOROLA
2N5457 equivalent
BC237
transistor 2N5457
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Untitled
Abstract: No abstract text available
Text: MSA1022-BT1* MSA1022-CT1* CASE 318D-03, STYLE 1 C O LLEC TO R M A XIM U M RATINGS TA = 25 C Rating 3 Symbol Value Unit Collector-Base Voltage v CBO -3 0 V Collector-Em itter Voltage v CEO -2 0 V Emitter-Base Voltage v EBO -5 V 'c -3 0 mA Symbol Max Unit
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MSA1022-BT1*
MSA1022-CT1*
318D-03,
SC-59
MSA1022-BT1
MSA1022-CT1
MSA1022-BT1
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Untitled
Abstract: No abstract text available
Text: MSA1022-BT1* MSA1022-CT1* CASE 318D-03, STYLE 1 M A X IM U M R A T IN G S TA = 2 5 ‘ C ì R ating S ym bol Value Unit C o lie cto r-B a se Voltage VCBO -3 0 V C o lle cto r-E m itte r V oltage v CEO -2 0 V E m itter-B ase V oltage v EBO -5 V 'c -3 0 mA
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MSA1022-BT1*
MSA1022-CT1*
318D-03,
SC-59
1022-B
1022-C
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marking code motorola ic
Abstract: motorola surface mount marking code MOTOROLA DATE CODE transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR II %1 □““TT 2 1 BASE EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector-Base Voltage v CBO -3 0 Vdc Collector-Emitter Voltage
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MSA1022-CT1
318D-03,
SC-59
MSA1022-BT1/D)
marking code motorola ic
motorola surface mount marking code
MOTOROLA DATE CODE transistor
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MSC2404C
Abstract: MSC1621T1 RB
Text: SC-59 Devices_ Maximum die size 25 mil x 25 mil CASE 318D-03 General-Purpose Transistors Pinout: 1-Emitter, 2-Base, 3-Collector Devices are listed in order of descending breakdown voltage. hpE Device @ lc fT Marking V BR CEO Min Max mA
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SC-59
318D-03
MSD601-RT1
MSD601-ST1
MSD602-RT1
MSD1328-RT1
MSB709-RT1
MSB709-ST1
MSB710-QT1
MSB710-RT1
MSC2404C
MSC1621T1 RB
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