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    CY62127DV18 Search Results

    CY62127DV18 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY62127DV18 Cypress Semiconductor 1-Mb (64K x 16) Static RAM Original PDF
    CY62127DV18L-55BVI Cypress Semiconductor 1M (64k x 16) Static RAM Original PDF
    CY62127DV18L-55ZI Cypress Semiconductor 1M (64k x 16) Static RAM Original PDF
    CY62127DV18LL-55BVI Cypress Semiconductor 1M (64k x 16) Static RAM Original PDF
    CY62127DV18LL-55ZI Cypress Semiconductor 1M (64k x 16) Static RAM Original PDF

    CY62127DV18 Datasheets Context Search

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    CY62127DV18

    Abstract: No abstract text available
    Text: CY62127DV18 MoBL2 ADVANCE INFORMATION 1M 64K x 16 Static RAM Features • Very high speed: 55 ns • Voltage range: 1.65V to 1.95V • Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 2.5 mA @ f = fMAX • Ultra-low standby power


    Original     		PDF CY62127DV18 48-ball 44-pin CY62127DV18

    CY62127DV18

    Abstract: No abstract text available
    Text: CY62127DV18 MoBL2 PRELIMINARY 1 Mb 64K x 16 Static RAM Features • Very high speed: 55 ns • Voltage range: 1.65V to 2.2V • Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 3.75 mA @ f = fMAX • Ultra-low standby power


    Original     		PDF CY62127DV18 48-ball 44-lead CY62127DV18

    CY62127DV18

    Abstract: No abstract text available
    Text: CY62127DV18 MoBL2 PRELIMINARY 1 Mb 64K x 16 Static RAM Features • Very high speed: 55 ns • Voltage range: 1.65V to 2.2V • Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 3.75 mA @ f = fMAX • Ultra-low standby power


    Original     		PDF CY62127DV18 48-ball 44-lead CY62127DV18