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    Abstract: No abstract text available
    Text: ChenYang Technologies GmbH & Co. KG CYSJ302A GaAs HALL-EFFECT ELEMENTS CYSJ302A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.


    Original     		PDF CYSJ302A THS119, KSY14 KSY44 D-85464