SMP60N06-18
Abstract: SMP60N06 SMP60N06-18 power mosfet data sheet SMP60N06 SUP50N06 SUP50N06-18
Text: SMP60N06-18 N-Channel Enhancement-Mode Transistor, 18-mW rDS on Product Summary VDS (V) rDS(on) (W) ID (A) 60 0.018 60 See lowerĆcost version: SUP50N06Ć18 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
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SMP60N06-18
18-mW
SUP50N0618
O-220AB
P-36737--Rev.
30-May-94
SMP60N06-18
SMP60N06
SMP60N06-18 power mosfet
data sheet SMP60N06
SUP50N06
SUP50N06-18
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SOt323 marking code 6X
Abstract: 6n sot-323 marking 6H SC-70
Text: MUN5111T1 Series Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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MUN5111T1
SC-70/SOT-323
SOt323 marking code 6X
6n sot-323
marking 6H SC-70
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transistor f613
Abstract: transistor bc 567
Text: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.
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AO4604
AO4604
AO4604L
-AO4604L
16789ABA2CDE9AFDC
transistor f613
transistor bc 567
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hp5082-2811
Abstract: teledyne 1437 TP 1437 1437-HR 1437H
Text: T EL EDYNE COMPONENTS 3bE D m Û*n?b05 DQÛ?bOO T • WTELEDYNE COMPONENTS 1437 OPERATIONAL AMPLIFIER — WIDEBAND, FAST-SETTLING FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ ■ ■ ■ The 1437 hybrid op amp offers versatility in wideband steady-state and fast-transient applications. It stands out
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HP5082-2811
hp5082-2811
teledyne 1437
TP 1437
1437-HR
1437H
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teledyne 1437
Abstract: D 1437 transistor 1437-83 TELEDYNE PHILBRICK 1435 teledyne fet u TELEDYNE PHILBRICK V to F
Text: SfiE TELEDYNE COMPONENTS D a w ta s G a a b n a t, 1437/38 Wideband Fast-Settling Operational Amplifiers The 1437 and 1438 are hybrid op amps designed to offer versatility in wideband steady state and fast transient applica tions. The absence of large transients and oscillations in the
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200pA
teledyne 1437
D 1437 transistor
1437-83
TELEDYNE PHILBRICK 1435
teledyne fet u
TELEDYNE PHILBRICK V to F
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teledyne transistor
Abstract: TELEDYNE PHILBRICK OP AMP philbrick 1437
Text: TELEDYNE COMPONENTS 2ÖE D PRELIMINARY ÖTlTtiDH aaOL.23Ü T 1493 Dual Wideband Fast-Settling Operational Amplifier The 1493 is a dual op amp with electrical performance identi cal to that of the 1437. It is designed for high speed, wide bandwidth applications when space is at a premium. Each
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-80dB
100kHz.
100Hz,
teledyne transistor
TELEDYNE PHILBRICK OP AMP
philbrick 1437
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Untitled
Abstract: No abstract text available
Text: 19-1437; Rev0; 3/99 >kiyixi>ki ± 1 5 k V E S D - P r o t e c t e d , 3 . 0 V to 5. 5V, L o w - P o w e r , up to 2 5 0 k b p s , True R S - 2 3 2 T r a n s c e i v e r Description Features ♦ ESD Protection for RS-232 I/O Pins ±15kV— Human Body Model
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RS-232
15kV--
250kbps
EIA/TIA-232
3385E
MAX3385E
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1437-HR
Abstract: D 1437 transistor
Text: ^TELEDYNE COMPONENTS 1437 OPERATIONAL AMPLIFIER — WIDEBAND, FAST-SETTLING FEATURES GENERAL DESCRIPTION • ■ ■ The 1437 hybrid op amp offers versatility in wideband steady-state and fast-transient applications. It stands out for speed and predictability, as exemplified by its fast,
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D 1437 transistor
Abstract: philbrick 1437 D 1437 TELEDYNE PHILBRICK 1435 TELEDYNE PHILBRICK
Text: 1437/38 Wideband Fast-Settling Operational Amplifiers The 1437 and 1438 are hybrid op amps designed to offer versatility in wideband steady state and fast transient applica tions. The absence of large transients and oscillations in the settling waveform makes these op amps dependable system
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200pA
D 1437 transistor
philbrick 1437
D 1437
TELEDYNE PHILBRICK 1435
TELEDYNE PHILBRICK
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MMT3906
Abstract: No abstract text available
Text: M O T O R O L A SC -CDIODES/OPTO} 6367255 MOTOROLA SC DE I h3ti7ESS Q Q 3 0 2 B Û <D I O D E S / O P T O 34C 38228 D t- 3 t ~ n MiCRO-T continued) MMT3905.06 - pnp GENERAL PURPOSE TRANSISTORS • designed for general purpose switching and amplifier applications and for complementary circuitry with NPN types
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MMT3905
MMT3903
MMT3904
MMT3906
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2SD1437
Abstract: 2SB1033 2sB103
Text: K ~7> V 7 $ / I ransistors 2SD1437 2SD1437 H M i S f f c 7 ° U - ^ N P N '> U = ]> h 7>'sZ$ Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • W F 2 T h ill/D im en s io n s U n it: mm ~ 1) V C E ( s a t ) = 0 . 3 V ( T y p . ) “ “ (at Ic / I b = 2 A /0 .2 A )
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2SD1437
2SB1033
2SB1033.
O-220
2SD1437
2SB1033
2sB103
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D 1437 transistor
Abstract: saa1 TELEDYNE PHILBRICK OP AMP
Text: — *1493 Dual Wideband Fast-Settling Operational Amplifier The 1493 is a dual op amp with electrical performance identi cal to that of the 1437. It is designed for high speed, wide bandwidth applications when space is at a premium. Each amplifier section has its own individual compensation and
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-80dB
100kHz.
MIL-STD-883C,
100Hz,
D 1437 transistor
saa1
TELEDYNE PHILBRICK OP AMP
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Untitled
Abstract: No abstract text available
Text: •I bbS3T31 QQSSMTfl STM « A P X N AMER PHIL IPS /DISCR ETE BSP108 b7E _y \ _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a m iniature SOT223 envelope and intended
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bbS3T31
BSP108
OT223
bb53c
0D2S501
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SMP60N06-18 power mosfet
Abstract: SMP60N06-18 sup50n06-18 SUP50N06 D 1437 transistor
Text: Tem ic SMP60N06-18 S em i co n d u c t or s N-Channel Enhancement-Mode Transistor, 18-mQ ros on Product Summary VDS (V) 60 VIS Id (A) r DS(on) ( ^ ) 0.018 60 See lower-cost version: SUP50N06-18 D Q T0-220AB o cJi DRAIN connected to TAB Ö s GD S Top View
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SMP60N06-18
18-mQ
SUP50N06-18
T0-220AB
P-36737--Rev.
30-May-94
SMP60N06-18 power mosfet
SMP60N06-18
sup50n06-18
SUP50N06
D 1437 transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • f T = 5.5GHz • Gold metalization for high reliability ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code Pin Configuration
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Q62702-F1575
OT-343
fi235bDS
900MHz
fl235b05
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BSP108
Abstract: transistor marking ST4
Text: • ^53*331 OOaSMTÛ STM H A P X N AMER PHILIPS/DISCRETE BSP108 b?E » J ' - N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode ve rtica l D-MOS tran sisto r in a m in ia tu re S O T 223 envelope and intended
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BSP108
OT223
BSP108
transistor marking ST4
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor PHP3N20L Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope featuring high
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PHP3N20L
T0220AB
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2SA764
Abstract: B 1449 transistor 2SA765 2SA766 2SC1421 ep3010
Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SA764
2SA765
Tc-25
2SA766
2SA764
B 1449 transistor
2SA765
2SA766
2SC1421
ep3010
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bdx538
Abstract: BOX53C transistor box54c box54c Transistors BDX538 box53b box54 B0X53C BOX53 BOX53A
Text: MO TO RO LA SC 12E D I b3b?BS4 0004703 1 I X S T RS/R F • " NPN B0X53 BDX53A BDX53B BDX53C MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER COMPLEM ENTARY SILICON TRANSISTORS DA RLIN G TO N 8 AMPERE .d e s ig n e d fo r general-purpose a m p lifie r and low-speed sw itc h in g
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B0X53
BDX53A
BDX53B
BDX53C
BDX54
BDX54A
BDX54B
BDX54C
BDX53,
X53Ai
bdx538
BOX53C
transistor box54c
box54c
Transistors BDX538
box53b
box54
B0X53C
BOX53
BOX53A
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SQ-10a
Abstract: Teledyne Philbrick 1701 TELEDYNE PHILBRICK 4131-30 TELEDYNE PHILBRICK V to F 4701 Philbrick P85AU TELEDYNE PHILBRICK 1702 TELEDYNE PHILBRICK 2203 TELEDYNE PHILBRICK 1009 teledyne TP 1322 teledyne 4452
Text: TELEDYNE PHILBRICK M 1 C R C I R C U 1 T S UNITED STATES SOUTHEAST HEADQUARTERS 1640 Huron Trail WEST Allied Drive at Rte. 128 Dedham. MA 02026 Maitland. FL 82751 30423 Canwood Street Suite 212 Agoura Hills. CA 91301 Tel: 8188893827 Twx: 910.494 1949 Tel:
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SQ-10A
SQ-210
SQ-517
U5801
Teledyne Philbrick 1701
TELEDYNE PHILBRICK 4131-30
TELEDYNE PHILBRICK V to F 4701
Philbrick P85AU
TELEDYNE PHILBRICK 1702
TELEDYNE PHILBRICK 2203
TELEDYNE PHILBRICK 1009
teledyne TP 1322
teledyne 4452
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Untitled
Abstract: No abstract text available
Text: MICRO JACKS • • • • • • • • • Precision engineered, “closed entry" contacts Space saving design for high density packaging Micro jacks are available for mating with .015 to .082 diameter pins and leads Beryllium Copper multi-spring contact maintains retention after multiple insertions
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ASTM-B16
QQ-C-533)
MIL-G-45204,
1640B
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Untitled
Abstract: No abstract text available
Text: • • • • • Precision engineered, “closed entry” contacts Space saving design for high density packaging Micro jacks are available for mating with .015 to .082 diameter pins and leads Beryllium Copper multi-spring contact maintains retention after multiple insertions
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ASTM-B16
QQ-C-533)
MIL-G-45204,
Tt028
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2N5915
Abstract: 2N5914 VK20009-3B VK200093B ta7409 rca 632 rca power transistor 14-150 pf 424 VK200-093B C3097
Text: File No. 424 rotBÆ Solid State RF Pow er Transisto rs Division 2N5914 2N5915 H ig h -P o w er Silicon N -P -N O verlay Transistors 12.E>-Volt, High-Pow er T yp es F o r Class-C A m p lifie rs in
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N5914
2N5915
2N5915
470MHz
2N5914
2N5914
ss3763r3
VK20009-3B
VK200093B
ta7409
rca 632
rca power transistor
14-150 pf 424
VK200-093B
C3097
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Untitled
Abstract: No abstract text available
Text: Final Electrical Specifications u im TECHNOLOGY LTC1436/LTC1436-PLL/LTC1437 High Efficiency Low Noise Synchronous Step-Down Switching Regulators April 1996 F€fflUR€S DCSCRIPTIOfl • Maintains Constant Frequency at Low Output Currents The LTC 1436/LTC1437 are synchronous step-down
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LTC1436/LTC1436-PLL/LTC1437
1436/LTC1437
400kHz
16-Pin
LTC1438/LTC1439
LT1510
LTC1538-AUX
LTC1539
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