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    D 42/1400 B Search Results

    D 42/1400 B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DBL5W5P543A40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB. Visit Amphenol Communications Solutions
    DEL2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DC8W8P500H30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 8W8 Pin Right Angle Solder 30A, Europe Standard, 200 Cycles, Front: Without Accessory, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DEV2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Female Screw Lock UNC 4.40, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DEO2V2P543M30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 30A, Europe Standard, 500 Cycles, Front: Threaded Insert UNC 4.40, Back: Metal Brackets. Visit Amphenol Communications Solutions
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    D 42/1400 B Price and Stock

    Hirschmann Electronics GmbH & Co Kg TOFINO XENON MODBUSTCP LSM

    Software TOFINO XENON MODBUSTCP LSM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TOFINO XENON MODBUSTCP LSM 1
    • 1 $1351.14
    • 10 $1351.14
    • 100 $1351.14
    • 1000 $1351.14
    • 10000 $1351.14
    		Buy Now

    Intel Corporation CD8069504214002 SRFBC

    CPU - Central Processing Units SvrWS XP Cascade Lake-SP 10C 5215 2.5G 13.75M 85W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CD8069504214002 SRFBC
    • 1 $1763.23
    • 10 $1763.23
    • 100 $1763.23
    • 1000 $1763.23
    • 10000 $1763.23
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    D 42/1400 B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PEG225MJ4140QE1 aka A251MP142Q063A Capacitor, aluminum, 1400 uF, -10/+30% Tol LL – L LL+ Be a d lo c a t io n a t K E ME T ’s o p t io n F D Dimensions mm Specifications ID Dimension Tolerance D L LL+ LLF 20 37 42 42 0.8 +/-0.5 +/-1 +/-2 +/-2 +/-0.03


    Original     		PEG225MJ4140QE1 A251MP142Q063A 100Hz 100kHz 10kHz 45WVDC PDF

    GMB56231575145

    Abstract: No abstract text available
    Text: Tel. +41 24 445 66 88 Fax +41 24 445 66 89 [email protected] www.Lcap.ch LeclanchÄ Capacitors 48, av. de Grandson 1400 Yverdon, Switzerland Drawing No. :100011015 created from : hm 15/03/2013 11:42:00 Part Number : GMB56231575145 D +1 Ä 0,5 €D : 75 mm L :


    Original     		GMB56231575145 GMB56231575145 PDF

    ST7066U

    Abstract: ST7066 Sitronix ST7066U Display Controller ST7066U-0E lcd interface with 8051 ST7066U-0A intel 8051 timing characteristics ST7065 intel 8051 40 pin datasheet
    Text: ST Sitronix ST7066U Dot Matrix LCD Controller/Driver n Features l l l l l l l l 5 x 8 and 5 x 11 dot matrix possible Low power operation support: - 2.7 to 5.5V Wide range of LCD driver power - 3.0 to 10V Correspond to high speed MPU bus interface - 2 MHz when VCC = 5V


    Original     		ST7066U 200-bit 16-common 40-segment COM16 ST7065 30Kohm ST7066U ST7066 Sitronix ST7066U Display Controller ST7066U-0E lcd interface with 8051 ST7066U-0A intel 8051 timing characteristics ST7065 intel 8051 40 pin datasheet PDF

    Untitled

    Abstract: No abstract text available
    Text: RECTIPOINT SILICON POWER RECTIFIERS • HALF & FULL WAVE, SINGLE & THREE PHASE FIGURE 73 B P E Dia. AC G C F Dia. + D B FIGURE 72 E Dia. AC P M L F Dia. (-) F Dia. (+) K C Q N D A B C D E F G K L M N P Q Dimensions X Type Y Type Inches Millimeters Inches


    Original     		16UNC 3/16x5/16 X3404B1 X3406B1 X3408B1 X3410B1 X3412B1 X3414B1 PDF

    KS0066U HD44780

    Abstract: KS0066U SED1278 GSM798E HD44780 KS0066 QFP80 COM16 GSM788E GSM793E
    Text: GSM7980 Syntek Semiconductor Co., Ltd. Description The GSM7980 dot-matrix liquid crystal display controller and driver LSI displays alphanumeric, Japanese kana characters, and symbols. It can be configured to drive a dot-matrix liquid crystal display under the control of a 4- or 8-bit microprocessor. Since all the functions such as display RAM,


    Original     		GSM7980 GSM7980 HD44780, KS0066U SED1278 GSM7980. COM16 COM1-16 KS0066U HD44780 GSM798E HD44780 KS0066 QFP80 COM16 GSM788E GSM793E PDF

    Untitled

    Abstract: No abstract text available
    Text: High IP3 Low Noise Amplifier 50Ω ZRL-2300 1400 to 2300 MHz Features • high IP3, +42 dBm typ. • low noise figure, 2.5 dB typ. • broadband flat gain response • internal voltage regulated • over-voltage and transient protected Applications • high dynamic range


    Original     		ZRL-2300 FJ893 A1600 ZRL-2300 PDF

    Untitled

    Abstract: No abstract text available
    Text: High IP3 Low Noise Amplifier 50Ω ZRL-2300 1400 to 2300 MHz Features • high IP3, +42 dBm typ. • low noise figure, 2.5 dB typ. • broadband flat gain response • internal voltage regulated • over-voltage and transient protected Applications • high dynamic range


    Original     		ZRL-2300 FJ893 ZRL-2300 PDF

    M259

    Abstract: M-259 AM1214-250 XAM1214-250
    Text: AM1214-250 RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS TARGET DATA • REFRACTORY /GOLD METALLIZATION • EMITTER SITE BALLASTING • LOW RF THERMAL RESISTANCE • INPUT/OUTPUT MATCHING • OVERLAY GEOMETRY • METAL/CERAMIC HERMETIC PACKAGE • POUT = 300 W MIN. WITH 8.0 dB GAIN


    Original     		AM1214-250 XAM1214-250 AM1214-250 M259 M-259 XAM1214-250 PDF

    42756 regulator

    Abstract: 42756 C207 capacitor j146 1300 transistor
    Text: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with


    Original     		PTVA123501EC PTVA123501EC H-36248-2 42756 regulator 42756 C207 capacitor j146 1300 transistor PDF

    0119A

    Abstract: IC/0119A IC/IC/0119A
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170HR3 0119A IC/0119A IC/IC/0119A PDF

    air 7306

    Abstract: No abstract text available
    Text: 1400 SERIES Bobbin Inductors features Radial Format -40°C to 85°C Operating Temp Up to 13A IDC 10 H to 47 H Low DC Resistance Fully Tinned Leads PCB Mounting Hole Low Temperature Dependance MIL-I-23053/5 Class III Sleeving Supplied in Packs of 50 Custom Parts Available


    Original     		MIL-I-23053/5 215ppm 4100ppm 240mT air 7306 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 3, 9/2006 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170H PDF

    Untitled

    Abstract: No abstract text available
    Text: Ultra Low Noise ZX60-1215LN+ ZX60-1215LN Amplifier 50Ω, 800 MHz to 1400 MHz Features • • • • • • • Ultra low noise figure 0.4 typ. 11V-13V operation Good IP3, 27 dBm typ. Reverse voltage connection protected Small size Low cost Protected by US Patent 6,790,049


    Original     		ZX60-1215LN+ ZX60-1215LN 1V-13V GA955 ZX60-1215LN-S+ ZX60-1215LN-S we-1215LN ZX60-1215LN PDF

    ZRL-2300

    Abstract: No abstract text available
    Text: High IP3 ZRL-2300+ ZRL-2300 Low Noise Amplifier 50Ω 1400 to 2300 MHz Features • high IP3, +42 dBm typ. • low noise figure, 2.5 dB typ. • broadband flat gain response • internal voltage regulated • over-voltage and transient protected Connectors


    Original     		ZRL-2300+ ZRL-2300 2002/95/EC) ZRL-2300 PDF

    atc600

    Abstract: ATC600 CAPACITORS 465B A114 A115 AN1955 JESD22 MRF7S21170HR3 MRF7S21170HSR3 ATC100B0R3BT500X
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 4, 5/2007 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170HR3 atc600 ATC600 CAPACITORS 465B A114 A115 AN1955 JESD22 MRF7S21170HSR3 ATC100B0R3BT500X PDF

    el 509

    Abstract: D368S
    Text: EUPEC Fast rectifier diodes Type If r m s m V rrm V r sm = If sm / ¡ 2dt blE » lFAVM/tc • 3403217 0001333 bOb W U P E C V TO rT Ir m R th JC tv j max Outline VRRM + 50 V1) A V 10 ms, 10 ms, tv) = tvj = tyj ~ tv, max ^vj max t,| max t., max 1F = IfaVM


    OCR Scan     		PDF

    D1408

    Abstract: D1201 GQQ133H
    Text: EUPEC Fast rectifier diodes Type Vrrm VrsM = Vrrm + 50 V1 V If r m s m I fsm / i 2dt blE » I fAVM^C V TO) • It Ir m RfhJC <»i = ^vj = tv¡ m a i ¡F = I f AVM d¡F/dt = 50 A 180 °el sin. 10 ms, 10 ms, tv) tv, m ax Wj max tvj m ax tvj max A kA A2s V m£2


    OCR Scan     		GQQ133H D1201 D1408 PDF

    2SC1600

    Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
    Text: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is


    OCR Scan     		b4S7414 NE57500 NE57510 NE57520 NE575 2SC1600 2SC1042 2SC1642 NE57520 321E S21E 2SC164 PDF

    of all 74 ic series

    Abstract: 2SC3140 2SC3139 NEL080525-28 NEL0800 NEL080120-28 NEL080220-28 J279 J430 j6925
    Text: N E C / CALIFORNIA NEC SbE 3> • b457Mm Q0QES43 213 *NECC NEL080120-28 NEL080220-28 NEL080525-28 CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATING S FEATURES SYM BOLS • H IGH LIN EA R P O W E R PARAM ETERS Ta = 25°C UNITS R A TIN G S


    OCR Scan     		Q0QES43 NEL080120-28 NEL080220-28 NEL080525-28 NEL0801 NEL0802 NEL0805: NEL0800 to1000 bMS74m of all 74 ic series 2SC3140 2SC3139 NEL080525-28 J279 J430 j6925 PDF

    2SC1253

    Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733
    Text: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for


    OCR Scan     		MS7414 NE74000 NE74014 NE74020 NE740 E90115 NE74014 2SC12579 2SC1253 E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733 PDF

    bbc ds diodes DS 1,8

    Abstract: BBC DSA 0,9 14 A BBC DSA 0.9 bbc ds diodes bbc ds diodes DS 1,8 04 A diode bbc ds 1.8 bbc ds 17 bbc dsd 17 BBC DSA 42 bbc ds diodes DS 22
    Text: BBC Technical Data Silicon-Semiconductor ' Components BR0” Printed order nr. Rectifier-Diodes D G H s 30392 E Diodes are e le ctric devices which con du ct current in one directio n i.e. offer a low resistance, w hile blocking i.e. offering a high resistance, in the reverse direction.


    OCR Scan     		--330--i p-790â D-6840 bbc ds diodes DS 1,8 BBC DSA 0,9 14 A BBC DSA 0.9 bbc ds diodes bbc ds diodes DS 1,8 04 A diode bbc ds 1.8 bbc ds 17 bbc dsd 17 BBC DSA 42 bbc ds diodes DS 22 PDF

    Philips 2222 056 58103 capacitors

    Abstract: 057 58689 Philips capacitor 056 PSM-SI Philips capacitor 056 Philips 2222 050 58103 capacitors Philips 2222 050 56472 capacitors Philips electrolytic 132 philips 154 series aluminium 050 57223 PHILIPS capacitors 056
    Text: Philips Components Product specification Aluminium electrolytic capacitors Power Standard Miniature Snap-in 056/057 PSM-SI FEATURES • Polarized aluminium electrolytic capacitors, non-solid • Large types, minimized dimensions, cylindrical aluminium case, insulated with a blue sleeve


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    2SA1224

    Abstract: NEC JAPAN 3167 1S955 NE74014 NE90100 NE90115
    Text: NEC/ 5bE D CALIFORNIA NEC bM27M14 0005515 bMT MNECC T - 3 U 'L 3 PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDW IDTH PRODUCT: fr = 2.5 GHz The NE901 Series o f PNP silicon epitaxial transistors is de­


    OCR Scan     		00GS512 NE90100 NE90115 NE74014 NE901 NE90115 2SA1224 NEC JAPAN 3167 1S955 NE74014 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZENER DIODES, GLASS PACKAGE, LOW CURRENT N om inal Zener Z en er Voltage T e st C u rren t #t z r SO O m W JE D E C P a rt Num ber V, (V 1 ( m A) Maximum Z e n e r Impede nee t. @ I, , ” !! 2 5 mA ( O hm s) Z „ fg 1, (O liiti) Z Suffix i l p i l i m i ii i


    OCR Scan     		PDF