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Infineon Technologies AG SDD04S60 DIODE SIL CARB 600V 4A TO252-31
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SDD04S60	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $2.73338	Buy Now
Bristol Electronics	SDD04S60		2,549			1 - 10 - 100 - 1000 - 10000 -	Get Quote
ComSIT USA	SDD04S60		4,794			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IDD04S60CBUMA1 DIODE SIC 600V 5.6A TO252-31
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IDD04S60CBUMA1	Digi-Reel			1	1 $2.98 10 $2.98 100 $2.98 1000 $2.98 10000 $2.98	Buy Now
	IDD04S60CBUMA1	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	IDD04S60CBUMA1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc FFMD-04-S-60.00-01 .050" TIGER EYE IDC RIBBON CABLE Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FFMD-04-S-60.00-01	Bulk			1	1 $16.94 10 $16.94 100 $16.94 1000 $16.94 10000 $16.94	Buy Now
Avnet Americas	FFMD-04-S-60.00-01	Bulk			1	1 $14.5 10 $13.45 100 $10.83 1000 $10.83 10000 $10.83	Buy Now
Mouser Electronics	FFMD-04-S-60.00-01					1 $14.5 10 $13.45 100 $10.83 1000 $7.54 10000 $7.54	Get Quote
Master Electronics	FFMD-04-S-60.00-01					1 $17.78 10 $15.86 100 $11.6 1000 $9.24 10000 $9.24	Buy Now
Sager	FFMD-04-S-60.00-01				1	1 $14.5 10 $13.45 100 $10.83 1000 $9.84 10000 $9.84	Buy Now
Samtec Inc IDSD-04-S-60.00-ST8 INSULATION DISPLACEMENT TERMINAL Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IDSD-04-S-60.00-ST8	Bulk			1	1 $15.28 10 $15.28 100 $15.28 1000 $15.28 10000 $15.28	Buy Now
Avnet Americas	IDSD-04-S-60.00-ST8	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IDSD-04-S-60.00-ST8					1 $15.28 10 $14.18 100 $11.12 1000 $7 10000 $7	Get Quote
Newark	IDSD-04-S-60.00-ST8	Bulk			1	1 $19.92 10 $18.52 100 $11.2 1000 $11.2 10000 $11.2	Buy Now
Master Electronics	IDSD-04-S-60.00-ST8					1 $18.74 10 $16.72 100 $11.91 1000 $9.11 10000 $9.11	Buy Now

Sager	IDSD-04-S-60.00-ST8				1	1 $15.28 10 $14.18 100 $11.12 1000 $9.99 10000 $9.99	Buy Now
Samtec Inc TCSD-04-S-60.00-01-N 2MM DOUBLE ROW FEMALE IDC ASSEMB Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TCSD-04-S-60.00-01-N	Bulk			1	1 $15.47 10 $15.47 100 $15.47 1000 $15.47 10000 $15.47	Buy Now
Avnet Americas	TCSD-04-S-60.00-01-N	Bulk			1	1 $14.54 10 $13.77 100 $11.26 1000 $11.26 10000 $11.26	Buy Now
Mouser Electronics	TCSD-04-S-60.00-01-N					1 $14.54 10 $13.77 100 $11.26 1000 $7.23 10000 $7.23	Get Quote
Newark	TCSD-04-S-60.00-01-N	Bulk			1	1 $20.16 10 $18.75 100 $11.33 1000 $11.33 10000 $11.33	Buy Now
Master Electronics	TCSD-04-S-60.00-01-N					1 $18.97 10 $16.92 100 $12.06 1000 $9.23 10000 $9.23	Buy Now

Sager	TCSD-04-S-60.00-01-N				1	1 $15.47 10 $14.65 100 $11.26 1000 $10.42 10000 $10.42	Buy Now

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D04S6 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
smd diode marking f4 Abstract: idd04 Text: D04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features VDC 600 • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery IF 4 A • Revolutionary semiconductor material - Silicon Carbide V • No temperature influence on the switching behavior	Original	PDF	IDD04S60C 20mA2) PG-TO252 IDD04S60C smd diode marking f4 idd04
PG-TO252-3-1 Abstract: No abstract text available Text: SDP04S60, D04S60 SDT04S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery	Original	PDF	SDP04S60, SDD04S60 SDT04S60 PG-TO220-2-2. P-TO252-3- P-TO220-3 SDP04S60 P-TO220-3 PG-TO252-3-1
D04S60 Abstract: d04s6 Text: SDP04S60, D04S60 SDT04S60 Preliminary data Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Product Summary V VRRM 600 Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark Qc 13 nC No reverse recovery	Original	PDF	SDP04S60, SDD04S60 SDT04S60 P-TO220-2-2. P-TO252-3-1. P-TO220-3-1. SDP04S60 D04S60 d04s6
Untitled Abstract: No abstract text available Text: SDP04S60 D04S60 Preliminary data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery IF	Original	PDF	SDP04S60 SDD04S60 P-TO252-3-1 P-TO220-3-1 Q67040-S4369 D04S60
Untitled Abstract: No abstract text available Text: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV04S60C Description	Original	PDF	IDV04S60C IDVxxS60C O220FullPAK
D04S60 Abstract: P-TO252 Q67040-S4368 Q67040-S4369 Q67040-S4445 SDD04S60 SDP04S60 SDT04S60 SCHOTTKY 4A 600V Text: SDP04S60, D04S60 SDT04S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery	Original	PDF	SDP04S60, SDD04S60 SDT04S60 P-TO220-2-2. P-TO252-3-1. P-TO220-3-1. SDP04S60 Q67040-S4369 D04S60 D04S60 P-TO252 Q67040-S4368 Q67040-S4369 Q67040-S4445 SDD04S60 SDP04S60 SDT04S60 SCHOTTKY 4A 600V
Untitled Abstract: No abstract text available Text: IDH04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 8 nC IF 4 A • No temperature influence on the switching behavior	Original	PDF	IDH04S60C PG-TO220-2 D04S60C
d04s60c Abstract: IDT04S60C JESD22 D04S60 Text: IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDT04S60C PG-TO220-2-2 D04S60C d04s60c IDT04S60C JESD22 D04S60
D04S60C Abstract: IDT04S60C JESD22 PG-TO220-2-2 Text: IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDT04S60C PG-TO220-2-2 D04S60C D04S60C IDT04S60C JESD22 PG-TO220-2-2
D04S60 Abstract: to220 pcb footprint smd schottky diode marking 321 Schottky diode TO220 diode schottky 600v D04S60C TO252-3 material case SDP04S60 P-TO252 PG-TO252-3-1 Text: SDP04S60, D04S60 SDT04S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery	Original	PDF	SDP04S60, SDD04S60 SDT04S60 PG-TO220-2-2. P-TO252 P-TO220 SDP04S60 P-TO220-3 Q67040-S4369 D04S60 D04S60 to220 pcb footprint smd schottky diode marking 321 Schottky diode TO220 diode schottky 600v D04S60C TO252-3 material case SDP04S60 P-TO252 PG-TO252-3-1
D04S60C Abstract: IDH04S60C JESD22 Text: IDH04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDH04S60C PG-TO220-2 D04S60C D04S60C IDH04S60C JESD22
D04S60C Abstract: TO252-3 material case to252-3-11 IDD04S60C infineon msl DIODE smd marking Ag TO252 rthjc JESD22 smd diode f4 51 D04S60 Text: D04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDD04S60C PG-TO252 D04S60C D04S60C TO252-3 material case to252-3-11 IDD04S60C infineon msl DIODE smd marking Ag TO252 rthjc JESD22 smd diode f4 51 D04S60
D04S60C Abstract: diode it25 Text: IDH04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 8 nC IF 4 A • No temperature influence on the switching behavior	Original	PDF	IDH04S60C IDH04S60C PG-TO220-2 D04S60C diode it25
Infineon power diffusion process Abstract: Schottky diode TO220 D04S60C JESD22 Text: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV04S60C Description	Original	PDF	IDV04S60C IDVxxS60C O220FullPAK Infineon power diffusion process Schottky diode TO220 D04S60C JESD22

DSA0032037 Abstract: PG-TO252-3-1 Text: SDP04S60, D04S60 SDT04S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery	Original	PDF	SDP04S60, SDD04S60 SDT04S60 PG-TO220-2-2. PG-TO252-3-1. PG-TO220-3-1. SDP04S60 DSA0032037 PG-TO252-3-1
PG-TO252-3-1 Abstract: PG-TO-252-3-1 Text: SDP04S60, D04S60 SDT04S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery	Original	PDF	SDP04S60, SDD04S60 SDT04S60 PG-TO220-2-2. PG-TO252-3-1. PG-TO220-3-1. SDP04S60 PG-TO252-3-1 PG-TO-252-3-1
Untitled Abstract: No abstract text available Text: D04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features VDC 600 • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery IF 4 A • Revolutionary semiconductor material - Silicon Carbide V • No temperature influence on the switching behavior	Original	PDF	IDD04S60C PG-TO252 20mA2)
P-TO252 Abstract: D04S60 diode schottky 600v TO252 rthjc Q67040-S4368 Q67040-S4369 SDD04S60 SDP04S60 SDT04S60 Text: SDP04S60, D04S60 SDT04S60 Preliminary data Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Product Summary Revolutionary semiconductor V 600 VRRM material - Silicon Carbide Switching behavior benchmark Qc 13 nC No reverse recovery	Original	PDF	SDP04S60, SDD04S60 SDT04S60 P-TO220-2-21. P-TO252-3-1. P-TO220-3-1. SDP04S60 Q67040-S4369 D04S60 P-TO252 D04S60 diode schottky 600v TO252 rthjc Q67040-S4368 Q67040-S4369 SDD04S60 SDP04S60 SDT04S60
to220 pcb footprint Abstract: D04S60 P-TO252 Schottky diode TO220 d 1398 infineon 6260 TO252-3 rthjc Q67040-S4368 Q67040-S4369 Q67040-S4445 Text: SDP04S60, D04S60 SDT04S60 Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery	Original	PDF	SDP04S60, SDD04S60 SDT04S60 P-TO220-2-2. P-TO252-3-1. P-TO220-3-1. SDP04S60 Q67040-S4369 D04S60 to220 pcb footprint D04S60 P-TO252 Schottky diode TO220 d 1398 infineon 6260 TO252-3 rthjc Q67040-S4368 Q67040-S4369 Q67040-S4445
D04S60C Abstract: IDV04S60C Text: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV04S60C Description	Original	PDF	IDV04S60C IDVxxS60C O220FullPAK D04S60C IDV04S60C
D04S60 Abstract: smd schottky diode marking 321 PG-TO252-3-1 2t -3-6-5 smd PG-TO-252-3-1 SDP04S60 SCHOTTKY 4A 600V Text: SDP04S60, D04S60 SDT04S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery	Original	PDF	SDP04S60, SDD04S60 SDT04S60 PG-TO220-2-2. P-TO252 P-TO220 SDP04S60 P-TO220-3 D04S60 smd schottky diode marking 321 PG-TO252-3-1 2t -3-6-5 smd PG-TO-252-3-1 SCHOTTKY 4A 600V
Untitled Abstract: No abstract text available Text: IDT04S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery I F @ T C < 140°C 4 A I F @ T C < 100°C 6 A • Revolutionary semiconductor material - Silicon Carbide	Original	PDF	IDT04S60C PG-TO220-2-2
D04S60C Abstract: D04S60 Q67040-S4368 Q67040-S4369 Q67040-S4445 SDD04S60 SDP04S60 SDT04S60 SCHOTTKY 4A 600V Text: SDP04S60, D04S60 SDT04S60 Final data Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Product Summary V VRRM 600 Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark Qc 13 nC No reverse recovery IF 4	Original	PDF	SDP04S60, SDD04S60 SDT04S60 P-TO220-2-2. P-TO252-3-1. P-TO220-3-1. SDP04S60 Q67040-S4369 D04S60 D04S60C D04S60 Q67040-S4368 Q67040-S4369 Q67040-S4445 SDD04S60 SDP04S60 SDT04S60 SCHOTTKY 4A 600V

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D04S6 Search Results

D04S6 Price and Stock

Infineon Technologies AG SDD04S60

Infineon Technologies AG IDD04S60CBUMA1

Samtec Inc FFMD-04-S-60.00-01

Samtec Inc IDSD-04-S-60.00-ST8

Samtec Inc TCSD-04-S-60.00-01-N

D04S6 Datasheets Context Search

smd diode marking f4

PG-TO252-3-1

D04S60

Untitled

Untitled

D04S60

Untitled

d04s60c

D04S60C

D04S60

D04S60C

D04S60C

D04S60C

Infineon power diffusion process

DSA0032037

PG-TO252-3-1

Untitled

P-TO252

to220 pcb footprint

D04S60C

D04S60

Untitled

D04S60C