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Untitled Abstract: No abstract text available Text: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior	Original	PDF	IDD08SG60C 20mA2)
D08G60C Abstract: No abstract text available Text: IDH08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior	Original	PDF	IDH08SG60C 20mA2) PG-TO220-2 D08G60C D08G60C
D08G60C Abstract: IDH08SG60C JESD22 Text: IDH08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior	Original	PDF	IDH08SG60C 20mA2) D08G60C IDH08SG60C JESD22
D08G60C Abstract: No abstract text available Text: IDH08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 12 nC • Temperature independent switching behavior IF; TC< 130 °C	Original	PDF	IDH08SG60C 20mA2) PG-TO220-2 D08G60C D08G60C
Untitled Abstract: No abstract text available Text: IDH08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 12 nC • Temperature independent switching behavior IF; TC< 130 °C	Original	PDF	IDH08SG60C 20mA2)
D08G60C Abstract: IDD08SG60C JESD22 8 pin SMD Text: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior	Original	PDF	IDD08SG60C 20mA2) D08G60C IDD08SG60C JESD22 8 pin SMD
D08G60C Abstract: No abstract text available Text: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior	Original	PDF	IDD08SG60C 20mA2) IDD08SG60C PG-TO252-3 D08G60C
Untitled Abstract: No abstract text available Text: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 12 nC • Temperature independent switching behavior IF; TC< 130 °C	Original	PDF	IDD08SG60C 20mA2)
D08G60C Abstract: No abstract text available Text: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 12 nC • Temperature independent switching behavior IF; TC< 130 °C	Original	PDF	IDD08SG60C 20mA2) PG-TO252-3 D08G60C D08G60C
D08G60C Abstract: IDD08SG60C smd diode marking UJ JESD22 Text: IDD08SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior	Original	PDF	IDD08SG60C 20mA2) D08G60C IDD08SG60C smd diode marking UJ JESD22