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    D2386 Price and Stock

    Infineon Technologies AG GATELEAD2386XPSA1

    STD THYR/DIODEN DISC - Trays (Alt: GATELEAD2386XPSA1)
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    Avnet Americas GATELEAD2386XPSA1 Tray 130
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    EBV Elektronik GATELEAD2386XPSA1 4 Weeks 1
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    Mersen Electrical Power A430C50-15 (ALTERNATE: D238697)

    Fuse, Capacitor Protection, 4.3kV, Type 15, External Female to Bolt, 65kA, 50A | Mersen A430C50-15
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS A430C50-15 (ALTERNATE: D238697) Bulk 5 6 Weeks 1
    • 1 $370.68
    • 10 $352.15
    • 100 $333.61
    • 1000 $333.61
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    Bimba Manufacturing Company D-23861

    U-Cup .531 id Buna, Metric Basic Twin Bore | Bimba D-23861
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    RS D-23861 Bulk 5 Weeks 1
    • 1 $1.92
    • 10 $1.92
    • 100 $1.92
    • 1000 $1.92
    • 10000 $1.92
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    Bimba Manufacturing Company D-23862

    U-Cup .75 id Buna, Metric Basic Twin Bore | Bimba D-23862
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS D-23862 Bulk 5 Weeks 1
    • 1 $1.92
    • 10 $1.92
    • 100 $1.92
    • 1000 $1.92
    • 10000 $1.92
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    Bimba Manufacturing Company D-23860

    U-Cup .315 id Buna, Metric Basic Twin Bore | Bimba D-23860
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS D-23860 Bulk 5 Weeks 1
    • 1 $1.75
    • 10 $1.75
    • 100 $1.75
    • 1000 $1.75
    • 10000 $1.75
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    D2386 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    D2386

    Abstract: D2386 TOSHIBA 2SB1557 2SD2386
    Text: D2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor D2386 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1557 Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SD2386 2SB1557 2-16C1A D2386 D2386 TOSHIBA 2SB1557 2SD2386 PDF

    D2386

    Abstract: 2SB1557 2SD2386
    Text: D2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor D2386 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1557 Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		2SD2386 2SB1557 2-16C1A D2386 2SB1557 2SD2386 PDF

    D2386 TOSHIBA

    Abstract: No abstract text available
    Text: D2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor D2386 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1557 Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SD2386 2SB1557 2-16C1A D2386 TOSHIBA PDF