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    DARLINGTON 300W Search Results

    DARLINGTON 300W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ULS2003H/R Rochester Electronics LLC ULS2003 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    ULS2022R/B Rochester Electronics LLC ULS2022 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    PL300-100L Coilcraft Inc SMPS Transformer, 300W, ROHS COMPLIANT Visit Coilcraft Inc
    PL300-102L Coilcraft Inc SMPS Transformer, 300W, ROHS COMPLIANT Visit Coilcraft Inc
    HA3950-AL Coilcraft Inc SMPS Transformer, 300W, ROHS COMPLIANT Visit Coilcraft Inc

    DARLINGTON 300W Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NTE2349

    Abstract: 300w power amplifier circuit diagram complementary npn-pnp darlington 300w nte2350
    Text: NTE2349 NPN & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.


    Original     		NTE2349 NTE2350 250mA 500mA 200mA 300mA NTE2349 300w power amplifier circuit diagram complementary npn-pnp darlington 300w nte2350 PDF

    300w power amplifier circuit diagram

    Abstract: complementary npn-pnp darlington 300w NTE2350 NTE2349 300w transistor power amplifier circuit diagram COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS SILICON COMPLEMENTARY transistors darlington NTE234
    Text: NTE2349 NPN & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.


    Original     		NTE2349 NTE2350 250mA 500mA 200mA 300mA 300w power amplifier circuit diagram complementary npn-pnp darlington 300w NTE2350 NTE2349 300w transistor power amplifier circuit diagram COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS SILICON COMPLEMENTARY transistors darlington NTE234 PDF

    DARLINGTON 30A 100V npn

    Abstract: TO3 package PMD18D100 darlington 300w 2.2KW
    Text: SEME PMD18D100 LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. FEATURES 2. 5 20.3 max. E 30.1 1 .0 B • • • • TO3 PACKAGE 100V 100A PEAK 300 WATTS 16.9 39.5 max. 4.2 DESCRIPTION 10.9 The PMD18D100 is an NPN Darlington


    Original     		PMD18D100 PMD18D100 100mA 300ms, DARLINGTON 30A 100V npn TO3 package darlington 300w 2.2KW PDF

    H11GX

    Abstract: H11G1 datasheet H11G2 H11G1 H11G3
    Text: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1 H11G2 H11G3 DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor


    Original     		H11G1 H11G2 H11G3 H11GX E90700 00045A H11G1 datasheet H11G2 H11G1 H11G3 PDF

    H11GX

    Abstract: H11G1 H11G2 H11G3
    Text: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1 H11G2 H11G3 DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor


    Original     		H11G1 H11G2 H11G3 H11GX E90700 H11G1 H11G2 H11G3 PDF

    MOC8030

    Abstract: MOC8050
    Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC8030 MOC8050 DESCRIPTION PACKAGE DIMENSIONS The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.


    Original     		MOC8030 MOC8050 MOC8030 MOC8050 MOC8030) MOC8050) E90700 01HOUT DS300264 PDF

    MOC8020

    Abstract: MOC8021
    Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC8020 DESCRIPTION MOC8021 PACKAGE DIMENSIONS The MOC8020 and MOC8021 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.


    Original     		MOC8020 MOC8021 MOC8020 MOC8021 MOC8020) MOC8021) E90700 DS300392 PDF

    MOC8030

    Abstract: MOC8050
    Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC8030 MOC8050 DESCRIPTION PACKAGE DIMENSIONS The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.


    Original     		MOC8030 MOC8050 MOC8030 MOC8050 MOC8030) MOC8050) E90700 01lopment. PDF

    MOC8020

    Abstract: MOC8021 IR phototransistor
    Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC8020 DESCRIPTION MOC8021 PACKAGE DIMENSIONS The MOC8020 and MOC8021 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.


    Original     		MOC8020 MOC8021 MOC8020 MOC8021 MOC8020) MOC8021) E90700 IR phototransistor PDF

    TA 2092 N

    Abstract: MOC119 SE-171 Swindon Silicon Systems
    Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES


    Original     		MOC119 MOC119 E90700 DS300382 TA 2092 N SE-171 Swindon Silicon Systems PDF

    MOC8030

    Abstract: MOC8050 darlington 300w
    Text: PHOTODARLINGTON OPTOCOUPLERS Preliminary NO BASE CONNECTION MOC8030 MOC8050 DESCRIPTION PACKAGE DIMENSIONS The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.


    Original     		MOC8030 MOC8050 MOC8030 MOC8050 MOC8030) MOC8050) E90700 DS300264 darlington 300w PDF

    MOC119

    Abstract: darlington 300w
    Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES


    Original     		MOC119 MOC119 E90700 darlington 300w PDF

    Quality Technologies optocouplers

    Abstract: B613 IC 1296 QT OPTOELECTRONICS MOC8030 MOC8050 PONT DIODE 0884 qt
    Text: PHOTODARLINGTON OPTOCOUPLERS Preliminary NO BASE CONNECTION MOC8030 MOC8050 DESCRIPTION PACKAGE DIMENSIONS The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.


    Original     		MOC8030 MOC8050 MOC8030 MOC8050 MOC8030) MOC8050) E90700 SS16/1, HP19-3EY 00035A Quality Technologies optocouplers B613 IC 1296 QT OPTOELECTRONICS PONT DIODE 0884 qt PDF

    K1 MARK 6PIN

    Abstract: MOC1193S
    Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES


    Original     		MOC119 MOC119 E90700 diffe700, P01101067 MOC119300 MOC119300W MOC1193S MOC1193SD K1 MARK 6PIN PDF

    MOC8020

    Abstract: MOC8021
    Text: PHOTODARLINGTON OPTOCOUPLERS Preliminary NO BASE CONNECTION MOC8020 MOC8021 DESCRIPTION PACKAGE DIMENSIONS The MOC8020 and MOC8021 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.


    Original     		MOC8020 MOC8021 MOC8020 MOC8021 MOC8020) MOC8021) E90700 DS300392 PDF

    Untitled

    Abstract: No abstract text available
    Text: -/ , Una. CX 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 PMD18D100 NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm FEATURES • TO3 PACKAGE • 100V • 100APEAK L • 300 WATTS *.* DESCRIPTION TO3 Package.


    Original     		PMD18D100 100APEAK PMD18D100 100mA 300us, PDF

    OMA120

    Abstract: FZT605 FZT604 FZT705 ARAA 14ge
    Text: I SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON FZT604 TRANSISTORS ~ ISSUE 3- OCTOBER 1995 FEATURES * Guaranteed * Fast Switching c h~~ Specified up to 2A E PARTMARKING DEVICE TYPE IN FULL DETAIL - COMPLEMENTARY TYPES - FZT604 - FZ1704 c @ B FZT605 - FZT705


    Original     		OT223 FZT604 FZT604 FZ1704 FZT605 FZT705 FZT605 FZTBI14 OMA120 FZT705 ARAA 14ge PDF

    2N3055 power amplifier circuit

    Abstract: 40636 40363 300W TRANSISTOR AUDIO AMPLIFIER 200w silicon audio power transistor 200W TRANSISTOR AUDIO AMPLIFIER 40872 2N3439 2N4063 40412
    Text: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6.5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386


    OCR Scan     		2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) 2N3055 power amplifier circuit 40636 40363 300W TRANSISTOR AUDIO AMPLIFIER 200w silicon audio power transistor 200W TRANSISTOR AUDIO AMPLIFIER 40872 2N3439 2N4063 40412 PDF

    transistor 40409

    Abstract: 40409 Transistor 40408 transistor 40409 TRANSISTOR 40389 2n2102 class ab audio amplifier circuit transistor 2n3055 40409 silicon 300W TRANSISTOR AUDIO AMPLIFIER 40361
    Text: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6.5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386


    OCR Scan     		2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) transistor 40409 40409 Transistor 40408 transistor 40409 TRANSISTOR 40389 2n2102 class ab audio amplifier circuit transistor 2n3055 40409 silicon 300W TRANSISTOR AUDIO AMPLIFIER 40361 PDF

    transistor mj11028 equivalent

    Abstract: MJ11033 MJ11032 darlington 300w transistor mj11032 equivalent MJ11028 MJ11029 300w amplifier darlington npn 90v MJ11031
    Text: SEME LAB MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.187 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A


    Original     		MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 TEMPJ11033 100mA transistor mj11028 equivalent MJ11033 MJ11032 darlington 300w transistor mj11032 equivalent MJ11028 MJ11029 300w amplifier darlington npn 90v MJ11031 PDF

    optocoupler 815

    Abstract: OPTOCOUPLER MARKING CODE OPTOCOUPLER 4-PIN application note digital optocoupler 4pin isolation 4 pin optocoupler how to build optocoupler led phototransistor pairs without optocoupler OPTOCOUPLER 4-PIN H11B815 4PIN optocoupler
    Text: H11B815 4-Pin Photodarlington Optocoupler Description Applications The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package. • ■ ■ ■ ■ Features ■ Compact 4-pin package


    Original     		H11B815 H11B815 E90700) optocoupler 815 OPTOCOUPLER MARKING CODE OPTOCOUPLER 4-PIN application note digital optocoupler 4pin isolation 4 pin optocoupler how to build optocoupler led phototransistor pairs without optocoupler OPTOCOUPLER 4-PIN 4PIN optocoupler PDF

    OPTOCOUPLER MARKING CODE

    Abstract: optocoupler 815 OPTOCOUPLER MARKING CODE 815 H11B815
    Text: H11B815 4-Pin Photodarlington Optocoupler Description Applications The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package. • ■ ■ ■ ■ Features ■ Compact 4-pin package


    Original     		H11B815 E90700) H11B815300 H11B815300W H11B8153S H11B8153SD H11B815S OPTOCOUPLER MARKING CODE optocoupler 815 OPTOCOUPLER MARKING CODE 815 PDF

    2t751

    Abstract: 40871 transistor 40636 40872 40872 transistor BD243 40594 Transistor 2n6320 2N5415 B0243C
    Text: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6 .5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386


    OCR Scan     		2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) 2t751 40871 transistor 40636 40872 40872 transistor BD243 40594 Transistor 2n6320 2N5415 B0243C PDF

    40872

    Abstract: 40872 transistor 40871 2N6180 npn 40872 2N6175 2N6178 2N6179 40988 40636
    Text: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6 .5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386


    OCR Scan     		2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) 40872 40872 transistor 40871 2N6180 npn 40872 2N6175 2N6178 2N6179 40988 40636 PDF