Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DARLINGTON 3A 100V NPN Search Results

    DARLINGTON 3A 100V NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    DARLINGTON 3A 100V NPN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NPN Transistor 8A

    Abstract: DARLINGTON 3A 50V npn TIP102 Darlington transistor DARLINGTON 3A 100V npn npn transistor 100v min high current darlington transistor power darlington npn transistor Silicon NPN Darlington transistor TIP102 TIP107
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0V(Max)@ IC= 3A


    Original
    TIP107 TIP102 NPN Transistor 8A DARLINGTON 3A 50V npn TIP102 Darlington transistor DARLINGTON 3A 100V npn npn transistor 100v min high current darlington transistor power darlington npn transistor Silicon NPN Darlington transistor TIP102 TIP107 PDF

    DARLINGTON 3A 100V npn

    Abstract: 2SD560 darlington power transistor ic 3A hfe 500 Darlington NPN Silicon Diode DARLINGTON 30A 100V npn 2SD560 transistor NPN Transistor 5V DARLINGTON HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON power darlington npn transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type 2SB601


    Original
    2SB601 VCC50V 2SD560 DARLINGTON 3A 100V npn 2SD560 darlington power transistor ic 3A hfe 500 Darlington NPN Silicon Diode DARLINGTON 30A 100V npn 2SD560 transistor NPN Transistor 5V DARLINGTON HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON power darlington npn transistor PDF

    NTE262

    Abstract: NTE261 DARLINGTON 3A 100V npn
    Text: NTE261 NPN & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.


    Original
    NTE261 NTE262 100mA NTE262 NTE261 DARLINGTON 3A 100V npn PDF

    NPN Transistor 8A

    Abstract: HP102 npn transistor 100v min npn 100v 1.5a DARLINGTON 3A 100V npn NPN Transistor 1A 100V
    Text: NPN DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP102 █ APPLICATIONS High Voltage switching.Motor driving. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-220 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃


    Original
    HP102 O-220 NPN Transistor 8A HP102 npn transistor 100v min npn 100v 1.5a DARLINGTON 3A 100V npn NPN Transistor 1A 100V PDF

    of TIP122

    Abstract: transistor tip120 TIP120 TIP121 TIP122
    Text: Darlington Power Transistors NPN TIP120/121/122 Darlington Power Transistors (NPN) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant TO-220 Mechanical Data Case: TO-220, Plastic Package Terminals:


    Original
    TIP120/121/122 O-220 O-220, MIL-STD-202, TIP120 TIP121 TIP122 of TIP122 transistor tip120 TIP120 TIP121 TIP122 PDF

    npn transistor 100v min

    Abstract: NPN Transistor 10A 100V HBDW93C IB 100MA NPN npn DARLINGTON 15A transistor npn ic10A DARLINGTON 3A 100V npn
    Text: NPN DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW93C █ APPLICATIONS Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-220 Tstg——Storage Temperature………………………… -65~150℃


    Original
    HBDW93C O-220 100mA, 100mA npn transistor 100v min NPN Transistor 10A 100V HBDW93C IB 100MA NPN npn DARLINGTON 15A transistor npn ic10A DARLINGTON 3A 100V npn PDF

    tip120

    Abstract: TIP122 TRANSISTOR tip122 transistor tip120 tip121 darlington NPN Transistor TO220 VCEO 80V 100V equivalent of TIP122 NPN Transistor VCEO 80V 100V DARLINGTON TIP121 tip120 darlington
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complementary to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 60 V : TIP121 80 V : TIP122 Collector-Emitter Voltage : TIP120


    Original
    TIP120/121/122 O-220 TIP125/126/127 TIP121 TIP122 TIP120 TemTIP121 tip120 TIP122 TRANSISTOR tip122 transistor tip120 tip121 darlington NPN Transistor TO220 VCEO 80V 100V equivalent of TIP122 NPN Transistor VCEO 80V 100V DARLINGTON TIP121 tip120 darlington PDF

    SLA4392

    Abstract: No abstract text available
    Text: SANKEN E L E C T R I C CO LTD SSE SLA4392 ]> V'nOVm 0001532 TOO M S A K J Silicon NPN Triple Diffused Planar Darlington Silicon PNP Epitaxial Planar Darlington •Maximum Ratings Ta=25°o _. . bym boi Ite m S lIllS ilÉ B  Îi ll siiW ftlll Collector-to-Base Voltage


    OCR Scan
    SLA4392 DuS25% PwS10ms, GG01233 STA300 STA400 45max SLA4392 PDF

    TIP102

    Abstract: TIP100 TIP101 DARLINGTON 3A 50V npn DARLINGTON 3A 100V npn
    Text: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP100/101/102 DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP105/106/107 APPLICATIONS


    Original
    TIP100/101/102 O-220C TIP105/106/107 TIP100 TIP101 TIP102 TIP102 TIP100 TIP101 DARLINGTON 3A 50V npn DARLINGTON 3A 100V npn PDF

    hp142ts

    Abstract: npn DARLINGTON 10A transistor npn ic10A NPN Transistor 8A Huashan
    Text: NPN DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP142TS █ APPLICATIONS High DC Current Gain █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-220 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃


    Original
    HP142TS O-220 -20mA hp142ts npn DARLINGTON 10A transistor npn ic10A NPN Transistor 8A Huashan PDF

    HP142TSW

    Abstract: DARLINGTON 3A 100V npn
    Text: NPN DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP142TSW █ APPLICATIONS High DC Current Gain █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-263 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature……………………………… 150℃


    Original
    HP142TSW O-263 -20mA HP142TSW DARLINGTON 3A 100V npn PDF

    DARLINGTON 3A 100V npn

    Abstract: hfe 2500 NTE264
    Text: NTE263 NPN & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.


    Original
    NTE263 NTE264 NTE263) NTE264) DARLINGTON 3A 100V npn hfe 2500 NTE264 PDF

    HP122

    Abstract: DARLINGTON 3A 100V npn transistor Ic3A NPN
    Text: NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122U █ APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


    Original
    HP122U O-251 HP122 DARLINGTON 3A 100V npn transistor Ic3A NPN PDF

    TIP102 Darlington transistor

    Abstract: TIP100 TIP101 TIP102
    Text: Darlington Power Transistors NPN TIP100/101/102 Darlington Power Transistors (NPN) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant TO-220 Mechanical Data Case: TO-220, Plastic Package Terminals:


    Original
    TIP100/101/102 O-220 O-220, MIL-STD-202, TIP100 TIP101 TIP102 TIP102 Darlington transistor TIP100 TIP101 TIP102 PDF

    CJF6388

    Abstract: CJF6668
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6388 TO-220FP Fully Isolated Plastic Package Complementary CJF6668 General Purpose Darlington Amplifier and Switching Applications


    Original
    ISO/TS16949 CJF6388 O-220FP CJF6668 C-120 CJF6388Rev CJF6388 CJF6668 PDF

    NPN Transistor VCEO 80V 100V

    Abstract: darlington power pack NPN Transistor VCEO 80V 100V DARLINGTON CJF6388 CJF6668
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6388 TO-220FP Fully Isolated Plastic Package Complementary CJF6668 General Purpose Darlington Amplifier and Switching Applications


    Original
    CJF6388 O-220FP CJF6668 C-120 CJF6388Rev NPN Transistor VCEO 80V 100V darlington power pack NPN Transistor VCEO 80V 100V DARLINGTON CJF6388 CJF6668 PDF

    Untitled

    Abstract: No abstract text available
    Text: r Sa n k e n electric co ltd 55E D 7^0741 0001S2Ô SÛT H S A K J Silicon NPN Triple Diffused Planar Darlington Silicon PNP Epitaxial Planar Darlington •Maximum Ratings j iif :| S l i i l i i l l l f f 1 Ta = 25°C :ff§pm iljfiis PNP um. 1 C ollector-to-B ase Voltage


    OCR Scan
    0001S2Ã STA300 STA400 45max PDF

    Untitled

    Abstract: No abstract text available
    Text: KSD1589 NPN SILICON DARLINGTON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE TO-220F • Complement to KSB1098 ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit V Collector Base Voltage VcBO 150 Collector Emitter Voltage


    OCR Scan
    KSD1589 KSB1098 O-220F PDF

    HP122

    Abstract: No abstract text available
    Text: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122 █ APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


    Original
    HP122 O-220 TestPW300sDuty HP122 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcBO 150 V Collector-Emitter Voltage


    OCR Scan
    KSD560 KSB601 350/is, PDF

    TIP102

    Abstract: NPN Transistor VCEO 80V 100V DARLINGTON IC 8A TIP102 Darlington transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor 8A TIP100 TIP101 NPN Transistor VCEO 80V 100V DARLINGTON TO 106 transistor base collector emitter
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE


    Original
    TIP100/101/102 O-220 TIP105/106/107 TIP101 TIP102 TIP100 TIP102 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A TIP102 Darlington transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor 8A TIP100 TIP101 NPN Transistor VCEO 80V 100V DARLINGTON TO 106 transistor base collector emitter PDF

    LB 122 transistor

    Abstract: LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor tip122 tip120 TIP 122 transistor TIP 122 transistor tip 122
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complementary to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage : TIP120 Rating : TIP121 : TIP122 Collector-Emitter Voltag»


    OCR Scan
    TIP125/126/127 TIP120 TIP121 TIP122 TIP121 TIP120/121/122 120ft LB 122 transistor LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor tip120 TIP 122 transistor TIP 122 transistor tip 122 PDF

    DARLINGTON 3A 100V npn

    Abstract: NTE2351 nte2352 SILICON COMPLEMENTARY transistors darlington
    Text: NTE2351 NPN & NTE2352 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Features: D High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A D Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original
    NTE2351 NTE2352 DARLINGTON 3A 100V npn NTE2351 nte2352 SILICON COMPLEMENTARY transistors darlington PDF

    2SD1633

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SD1633 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·DARLINGTON ·High speed switching ·Good linearity of hFE APPLICATIONS ·Power switching applications PINNING PIN DESCRIPTION 1 Base 2


    Original
    2SD1633 O-220Fa 2SD1633 PDF