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    g229

    Abstract: ZVN3306B
    Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/ DISCRETE De J ? 2 S D S 3 3 95D 05727 N-channel enhancement mode vertical D M O S FET FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown • Excellent temperature stability


    OCR Scan     		PDF ZVN3306A ZVN3306B ZVN3306F 0D0S727 G-233 7520S33 G-234 G-235 725DS33 DDD5734 g229