Untitled
Abstract: No abstract text available
Text: Analog Power AMA440N N-Channel 40-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 40 PRODUCT SUMMARY rDS(on) (mΩ) 15 @ VGS = 10V 21 @ VGS = 4.5V DFN2X2 Typical Applications: • DC/DC Conversion
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AMA440N
Tempe20
AMA440N
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TS16949
Abstract: ZXMN2F34MA ZXMN2F34MATA 2x2 dfn dfn marking 99 zetex diode 048
Text: ZXMN2F34MA 20V DFN2X2 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.060 @ VGS= 4.5V 5.1 0.120 @ VGS= 2.5V 3.6 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN
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ZXMN2F34MA
ZXMN2F34MATA
D-81541
TS16949
ZXMN2F34MA
ZXMN2F34MATA
2x2 dfn
dfn marking 99
zetex diode 048
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Untitled
Abstract: No abstract text available
Text: SDN520C N-Ch: 4.5 A, 20 V, RDS ON 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DFN2x2-6L DESCRIPTION These miniature surface mount MOSFETs utilize a
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SDN520C
05-Nov-2012
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Untitled
Abstract: No abstract text available
Text: Analog Power AMA420N N-Channel 20-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 20 PRODUCT SUMMARY rDS(on) (mΩ) 9 @ VGS = 4.5V 11 @ VGS = 2.5V DFN2X2 Typical Applications: • Power Routing
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AMA420N
Operati30
AMA420N
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Untitled
Abstract: No abstract text available
Text: Analog Power AMA410N N-Channel 100-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 92 @ VGS = 10V 99 @ VGS = 4.5V DFN2X2 Typical Applications: • LED Inverter Circuits
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AMA410N
Juncti20
AMA410N
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zetex diode 048
Abstract: dfn marking 99
Text: ZXMN2F34MA 20V DFN2X2 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.060 @ VGS= 4.5V 5.1 0.120 @ VGS= 2.5V 3.6 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN
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ZXMN2F34MA
ZXMN2F34MATA
D-81541
zetex diode 048
dfn marking 99
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Untitled
Abstract: No abstract text available
Text: Analog Power AMA430N N-Channel 30-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 30 PRODUCT SUMMARY rDS(on) (mΩ) 10.5 @ VGS = 10V 18 @ VGS = 4.5V DFN2X2 Typical Applications: • DC/DC Conversion
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AMA430N
AMA430N
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DFN2X2-6L
Abstract: 043 520 DFN2X2
Text: 苏州硅能半导体科技股份有限公司 Suzhou Silikron Semiconductor Corporation DFN2X2-6L PACKAGE OUTLINE DIMENSION Symbol A A1 A3 D E D1 E1 K b e L Rev.A Dimension In Millimeters Min Max 0.700/0.800 0.800/0.900 0.000 0.050 0.203REF 1.924 2.076 1.924
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203REF
200MIN
650TYP
008REF
008MIN
026TYP
DFN2X2-6L
043 520
DFN2X2
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Untitled
Abstract: No abstract text available
Text: Analog Power AMA921P Dual P-Channel 20-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -20 PRODUCT SUMMARY rDS(on) (mΩ) 79 @ VGS = -4.5V 110 @ VGS = -2.5V ID(A) -4.2 -3.6 DFN2x2-6L
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AMA921P
AMA921P
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Untitled
Abstract: No abstract text available
Text: Analog Power AMA421P P-Channel 20-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -20 PRODUCT SUMMARY rDS(on) (mΩ) 26 @ VGS = -4.5V 34 @ VGS = -2.5V DFN2X2 Typical Applications: • Load Switches
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AMA421P
Storage30
AMA421P
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Untitled
Abstract: No abstract text available
Text: SDN520C N-Ch: 4.5 A, 20 V, RDS ON 58 mΩ Ω P-Ch: -4.5 A, -20 V, RDS(ON) 112 mΩ Ω N & P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DFN2x2-6L DESCRIPTION These miniature surface mount MOSFETs utilize a
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SDN520C
250uA
-250uA
300us
4-Jul-2011
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Mosfet
Abstract: SSF1221J2
Text: SSF1221J2 12V P-Channel MOSFET Main Product Characteristics VDSS -12V RDS on 14.4 mΩ(typ.) ID -12A DFN2x2-6L Pin Assignment Schematic Diagram Features and Benefits Advanced trench MOSFET process technology Special designed for battery charge, load
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SSF1221J2
3000pcs
10pcs
15000pcs
60000pcs
Mosfet
SSF1221J2
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DFN2X2
Abstract: PAM2841SR WLED PAM2841 PAM2841GR 2X28
Text: PAM2841 1.5A SW Current, 40V Precision WLED Driver Part Number Package PAM2841SR MSOP -8 PAM2841GR DFN 2x2-8 Pin Configuration TOP View MSOP-8 PGND 1 DFN2X2 8 SW VIN 2 7 OVP ENA 3 6 FB Comp 4 5 GND PGND 1 8 SW VIN 2 7 OVP ENA 3 6 FB Comp 4 5 GND Typical Application Circuit
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PAM2841
PAM2841SR
PAM2841GR
DFN2X2
PAM2841SR
WLED
PAM2841
PAM2841GR
2X28
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AOZ1084DI
Abstract: AOZ1084 450KHz pwm shut down AOZ1 an1a marking code DFN2X2
Text: AOZ1084 1.2A Buck LED Driver General Description Features The AOZ1084 is a high efficiency, simple to use, 1.2A buck HB LED driver optimized for general lighting applications. The AOZ1084 works from a 4.5V to 36V input voltage range, and provides up to 1.2A of
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AOZ1084
AOZ1084
160mV
450kHz
AOZ1084DI
450KHz pwm shut down
AOZ1
an1a marking code
DFN2X2
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AON6704L
Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower
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O-252)
O-263)
MSOP-10
SC70-3
SC70-6
SC-89-3
SC-89-6
OD523
OD923
OT23-3
AON6704L
AOZ1094
AOZ1094AI
AON7403
AOZ1242
AOZ1014AI
AOZ1212AI
AOZ1361
AON6414AL
Aoz1025
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P2841
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated PAM2841 1.5W SW CURRENT, 40V PRECISION WLED DRIVER Description Pin Assignments The PAM2841 is a white LED driver, capable of driving 10 or more WLEDs in series depending on forward voltage of the LEDs with a range of input voltages from 2.7V to 5.5V.
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PAM2841
PAM2841
P2841
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Untitled
Abstract: No abstract text available
Text: Analog Power AMA829P P-Channel 20-V D-S MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (OHM) ID (A) -4.5 0.090 @ VGS = -4.5V -20 -4.5 0.120 @ VGS = -2.5V These miniature surface mount MOSFETs utilize a high cell density trench process to provide low
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AMA829P
DS-AMA829
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AP3417C
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated AP3417C 1.5MHZ SYNCHRONOUS STEP-DOWN DC-DC CONVERTER Description Pin Assignments PRELIMINARY DATASHEET The AP3417C is a high efficiency step-down DC-DC voltage converter. The chip operation is optimized by peak-current mode
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AP3417C
AP3417C
OT-23-5)
DS36516
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AH9249NTR-G1
Abstract: marking GJ9
Text: Product Brief High Sensitivity Micropower Omnipolar Hall-Effect Switch Description AH9249 Parametric Table The AH9249 is an ultra-sensitive Hall-effect switch with digital latched output, mainly designed for battery-operation, hand-held equipments. Supply Voltage V
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AH9249
AH9249
AH9249NTR-G1
AH9249DNTR-G1
AH9249NTR-G1
marking GJ9
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TSP70
Abstract: No abstract text available
Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > MOSFETs Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series
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TSP2305A
TSP40GD120P
TSP25G135T
O-247
TSP25GD135T
TSP25G135P
TSP25GD135P
TSP70
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secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
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SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
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SSFN2220
Abstract: DFN2X2 "battery protection"
Text: SSFN2220 DESCRIPTION The SSFN2220 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram
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SSFN2220
SSFN2220
DFN2X2
"battery protection"
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DFN2X2-6L
Abstract: SSFN2269
Text: SSFN2269 DESCRIPTION The SSFN2269 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = -20V,ID =-3.3A RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON) < 120mΩ @ VGS=-2.5V
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SSFN2269
SSFN2269
25unless
DFN2X2-6L
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated AP2127 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR Description Features The AP2127 Series are positive voltage regulator ICs fabricated by • Wide Operating Voltage: 2.5V to 6V CMOS process. • High Output Voltage Accuracy: ±2%
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AP2127
300mA
AP2127
10kHz
170mV
140mV
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