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    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-14L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 41.5 dBm at 7.1 GHz to 7.9 GHz


    OCR Scan     		PDF TIM7179-14L 2-16G1B) MW51010196 DG22573