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    DIE 3N163 Search Results

    DIE 3N163 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL70062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL70061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    HS0-26CT31RH-Q Renesas Electronics Corporation Radiation Hardened Quad Differential Line Drivers, DIE, / Visit Renesas Electronics Corporation

    DIE 3N163 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    U401 mosfet

    Abstract: 3N163 SPICE P-Channel Depletion Mode FET a7 P-CHANNEL FET J506 "Dual npn Transistor" 2N3955 LS301 J201 N-channel JFET to 90 J201 spice
    Text: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage


    Original     		3N163, 3N164 3N163 3N164 375mW -30ithic U401 mosfet 3N163 SPICE P-Channel Depletion Mode FET a7 P-CHANNEL FET J506 "Dual npn Transistor" 2N3955 LS301 J201 N-channel JFET to 90 J201 spice PDF

    3N163

    Abstract: TO72 package
    Text: 3N163 P-CHANNEL MOSFET The 3N163 is an enhancement mode P-Channel Mosfet The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.


    Original     		3N163 3N163 375mW TO72 package PDF

    high speed Zener Diode

    Abstract: "Dual PNP Transistor" PAD1 Spice a7 P-CHANNEL LS320 j177 TRANSISTOR "Dual npn Transistor" LS3250 2n5019 ultra low noise
    Text: NC G2 G1 NC NC G2 G1 NC Linear Integrated Systems - Lead Pb Free / RoHS Compliant Parts List MAIN MENU Home Page Page 1 of 3 Linear Integrated Systems Lead-Free / RoHS Fact Sheet Products Support Literature Spice Models Downloads Contact Us Distributors


    Original     		PDF

    diode ZENER A8

    Abstract: P-Channel Depletion Mosfets Siliconix Dual N-Channel JFET bare die zener Bi-Directional N-Channel mosfet Siliconix 2N5912 diode ZENER A8 5400 sd211de spice
    Text: SD5000/5001/5400/5401 QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Linear Integrated Systems Product Summary Features Benefits Applications • Quad SPST Switch with Zener Input Protection • Low Interelectrode Capacitance and Leakage • Ultra-High Speed Switching—tON: 1 ns


    Original     		SD5000/5001/5400/5401 SD5000/5400 diode ZENER A8 P-Channel Depletion Mosfets Siliconix Dual N-Channel JFET bare die zener Bi-Directional N-Channel mosfet Siliconix 2N5912 diode ZENER A8 5400 sd211de spice PDF

    ultra low igss pA

    Abstract: ultra low igss pA mosfet n channel
    Text: LS5301, PF5301 VERY HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR LF5301, PF5301, & 2N5301 HIGH INPUT INPEDANCE HIGH GAIN IG = 0.100 pA gfs = 70 µS ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated


    Original     		LS5301, PF5301 LF5301, PF5301, 2N5301 300mW ultra low igss pA ultra low igss pA mosfet n channel PDF

    intersil jfet

    Abstract: intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice
    Text: 3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns TO-72 BOTTOM VIEW 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)


    Original     		3N170 3N171 3N170 3N171 300mW intersil jfet intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice PDF

    2N4351

    Abstract: A6 ZENER DIODE "Dual npn Transistor" J201 spice intersil JFET TO 18 J201 N-channel JFET to 90 intersil JFET JFET NPN AMPLIFIER bare Die mosfet
    Text: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		2N4351 2N4351 100mA 375mW 100mA A6 ZENER DIODE "Dual npn Transistor" J201 spice intersil JFET TO 18 J201 N-channel JFET to 90 intersil JFET JFET NPN AMPLIFIER bare Die mosfet PDF

    2sk170 spice

    Abstract: j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6
    Text: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE f = 1kHz en = 0.9nV/√Hz HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = -500pA max LOW CAPACITANCE IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170


    Original     		LSK170 LSK389 400mW -500pA 2SK170 OT-23 2sk170 spice j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6 PDF

    N-Channel jfet 100V depletion

    Abstract: transistor j113 15 A PNP POWER TRANSISTOR P-Channel FET 100v to92 Ultra High Input Impedance N-Channel JFET Amplifier Dual N P-Channel 100V P-Channel JFET Switch
    Text: LS320 HIGH INPUT IMPEDANCE BiFET AMPLIFIER Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE rGs = 100GΩ HIGH TRANSCONDUCTANCE YFS = 30,000µS ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature


    Original     		LS320 200mW N-Channel jfet 100V depletion transistor j113 15 A PNP POWER TRANSISTOR P-Channel FET 100v to92 Ultra High Input Impedance N-Channel JFET Amplifier Dual N P-Channel 100V P-Channel JFET Switch PDF

    ultra low igss pA mosfet

    Abstract: n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel
    Text: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)


    Original     		LS4117, 2N4117) 2N4117A 300mW 2N4117/A 2N4118 FN4117/A 2N4118A ultra low igss pA mosfet n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel PDF

    N CHANNEL jfet Low Noise Audio Amplifier

    Abstract: diode ZENER A8 P-Channel Depletion Mosfets SST214 N CHANNEL jfet ultra Low Noise Audio Amplifier 2N4351 bare die zener sd214de ultra FAST DMOS FET Switches sst210 sot-143
    Text: SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH Linear Integrated Systems Product Summary Part Number V BR DS Min(V) VGS(th) Max (V) rDS(on) Max(Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10V 0.5 2 SST210 30 1.5


    Original     		SD-SST210/214 SD210DE SD214DE SST210 SST214 N CHANNEL jfet Low Noise Audio Amplifier diode ZENER A8 P-Channel Depletion Mosfets N CHANNEL jfet ultra Low Noise Audio Amplifier 2N4351 bare die zener ultra FAST DMOS FET Switches sst210 sot-143 PDF

    ultra low igss pA mosfet

    Abstract: ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent
    Text: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL


    Original     		100pA 360mW ultra low igss pA mosfet ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent PDF

    ultra low igss pA mosfet

    Abstract: J506 equivalent jfet n channel ultra low noise "N-Channel JFET" "Dual PNP Transistor" transistor j201 Dual N-Channel JFET super beta transistor jpad100 ultra low noise transistor
    Text: LS846 LOW NOISE, LOW LEAKAGE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE en = 3nV/√Hz LOW GATE LEAKAGE IG = 15pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -65 to +150 °C


    Original     		LS846 LS843 350mW ultra low igss pA mosfet J506 equivalent jfet n channel ultra low noise "N-Channel JFET" "Dual PNP Transistor" transistor j201 Dual N-Channel JFET super beta transistor jpad100 ultra low noise transistor PDF

    lateral mosfet audio amplifier

    Abstract: N CHANNEL jfet Low Noise Audio Amplifier JFET APPLICATIONS J201 N-channel JFET super beta transistor N CHANNEL jfet ultra Low Noise Audio Amplifier diode ZENER A8 sd211de spice J201 spice depletion n-channel mosfet to-92
    Text: SD-SST211/213/215 N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Linear Integrated Systems Product Summary Features Benefits Applications • Ultra-High Speed Switching—tON: 1 ns • Ultra-Low Reverse Capacitance: 0.2 pF • Low Guaranteed rDS @5 V • Low Turn-On Threshold Voltage


    Original     		SD-SST211/213/215 SD211DE/SST211 lateral mosfet audio amplifier N CHANNEL jfet Low Noise Audio Amplifier JFET APPLICATIONS J201 N-channel JFET super beta transistor N CHANNEL jfet ultra Low Noise Audio Amplifier diode ZENER A8 sd211de spice J201 spice depletion n-channel mosfet to-92 PDF

    zener sot-23 a9

    Abstract: JFET 50ma -40v jfet to 92 SST204
    Text: J/SST201 SERIES HIGH GAIN N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST201 SERIES LOW CUTOFF VOLTAGE VGS off ≤ 1.5V HIGH GAIN AV = 80 V/V 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) J SERIES Maximum Temperatures


    Original     		J/SST201 350mW OT-23 zener sot-23 a9 JFET 50ma -40v jfet to 92 SST204 PDF

    VCR11N

    Abstract: fet j310 surface mount pico-amp diode j510 high voltage pnp transistor SST511
    Text: VCR11N N-CHANNEL JFET VOLTAGE CONTROLLED RESISTOR Linear Integrated Systems FEATURES SECOND SOURCE FOR SILICONIX VCR11N VOLTAGE CONTROLLED RESISTANCE 100 to 200Ω 1 ABSOLUTE MAXIMUM RATINGS TO-71 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		VCR11N VCR11N 300mW fet j310 surface mount pico-amp diode j510 high voltage pnp transistor SST511 PDF

    U402 N CHANNEL FET

    Abstract: P-Channel Depletion Mode FET zener diode color codes glass zener diode color codes j201 jfet jfet n channel ultra low noise low noise p-channel fet dual fet q7 diode sg 71 jfet photo diode
    Text: LS627 PHOTO FET LIGHT SENSITIVE JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR CRYSTALONICS FF627 FLAT GLASS TOP FOR EXTERNAL OPTICS ULTRA HIGH SENSITIVITY ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		LS627 FF627 400mW U402 N CHANNEL FET P-Channel Depletion Mode FET zener diode color codes glass zener diode color codes j201 jfet jfet n channel ultra low noise low noise p-channel fet dual fet q7 diode sg 71 jfet photo diode PDF

    transistor j511

    Abstract: ls n channel jfet Siliconix Dual N-Channel JFET Transistor J310 TRANSISTOR 2n3955 zener zd 31 P-Channel Depletion Mode FET IT132 ID100 dual diode
    Text: J500 SERIES CURRENT REGULATING DIODES Linear Integrated Systems FEATURES SECOND SOURCE FOR SILICONIX J500 SERIES WIDE CURRENT RANGE 0.192 to 5.6mA BIASING NOT REQUIRED VGS = 0V A A K K 1 ABSOLUTE MAXIMUM RATINGS TO-92 BOTTOM VIEW @ 25 °C unless otherwise stated


    Original     		360mW transistor j511 ls n channel jfet Siliconix Dual N-Channel JFET Transistor J310 TRANSISTOR 2n3955 zener zd 31 P-Channel Depletion Mode FET IT132 ID100 dual diode PDF

    TO72 package n-channel jfet

    Abstract: 2N5019 "direct replacement" 2n4416 transistor spice SST4500 Ultra High Input Impedance N-Channel JFET Amplifier J201 Replacement 2n4416 transistor die n-channel JFET sot23-6 JFET power transistor 2n3956 equivalent transistor
    Text: 2N/SST4416 2N4416A N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER Linear Integrated Systems FEATURES Direct Replacement For SILICONIX 2N/SST4416 & 2N4416A VERY LOW NOISE FIGURE 400 MHz 4 dB (max) EXCEPTIONAL GAIN (400 MHz) 10 dB (min) 1 2N SERIES ABSOLUTE MAXIMUM RATINGS


    Original     		2N/SST4416 2N4416A 2N/SST4416 2N4416A LS4416 LS4416A 2N4416 300mW OT-23 TO72 package n-channel jfet 2N5019 "direct replacement" 2n4416 transistor spice SST4500 Ultra High Input Impedance N-Channel JFET Amplifier J201 Replacement 2n4416 transistor die n-channel JFET sot23-6 JFET power transistor 2n3956 equivalent transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: JU MRA1 DIE P-Channel Enhancement-Mode MOS Transistors in c o r p o r a te d MRA1CHP* 3N163 3N164 "Meets or exceeds specification for all part numbers listed below For additional design information please consult the typical performance curves MRA. DESIGNED FOR:


    OCR Scan     		3N163 3N164 PDF

    2N4065

    Abstract: uc1700
    Text: P -C H A N N E L E N H A N C E M E N T M O S FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .0 2 1 " 0.533mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


    OCR Scan     		584mm) 533mm) 0254mm) 2N4065 uc1700 PDF

    2N4065

    Abstract: DIE 3N163 UC1700 3N163 3N164 UCI700 UCI702
    Text: -ß a tttr o n P -C H A N N E L E N H A N C E M E N T M O S FE T Dev/ces. /ne CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 021 " 0.533mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


    OCR Scan     		533mm) 0254mm) 2N4065 DIE 3N163 UC1700 3N163 3N164 UCI700 UCI702 PDF

    2N4360

    Abstract: 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451
    Text: //nlitrnn_ iFia@BOJ Tr ©A'um© mm M O R D E R IN G IN F O R M A T IO N Devices. Inc. l® FOtHL® ItM FO K gir The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego’s standard for Q . A. production, marketing and sales.


    OCR Scan     		MFE2001 MFE2C04 MFE2005 MFE2006 MFE2133 MPF102 MPF108 MPF109 MPF111 MPF112 2N4360 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451 PDF

    TIS88A equivalent

    Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
    Text: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.


    OCR Scan     		20x40 111x109 TIS88A equivalent 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent PDF