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    DIODE 1N5818 Search Results

    DIODE 1N5818 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 1N5818 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1842m

    Abstract: DIODE 4d LDD400-1P ldd200 2i125 LDD200-2P
    Text: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser


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    PDF 200mA 400mA Aug-05 29-Sep-09 LDD200P-00400-A 1842m DIODE 4d LDD400-1P ldd200 2i125 LDD200-2P

    DIODE 4d

    Abstract: LDD200-1P ldd200 LDD400-1P LDDCAB-50 LDD200-2P DIODE 1N4001 LDD200P-00400 LDD400-3P DD200-1P
    Text: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser


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    PDF 200mA 400mA Aug-05 29-Sep-09 LDD200P-00400-A DIODE 4d LDD200-1P ldd200 LDD400-1P LDDCAB-50 LDD200-2P DIODE 1N4001 LDD200P-00400 LDD400-3P DD200-1P

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817-1N5819 SCHOTTKY BARRIER DIODE SOT-23-3L FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. 1. ANODE 3.CATHODE


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    PDF OT-23-3L 1N5817-1N5819 OT-23-3L 1N5817: 1N5818 1N5819: 1N5817 1N5818 1N5819

    PLD-500

    Abstract: PLD-10 M317 pld connector trimpot horizontal PLD-5000
    Text: PLD Series Laser Diode Drivers General Description Features The PLD Series Laser Diode Drivers combine the high performance you expect from a Wavelength component with two distinct improvements: low voltage operation from +5 V DC, and an Active Current Limit.


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    PDF 13-Nov-08 17-Feb-09 29-Jun-09 31-Aug-09 PLD5000-00400-A PLD-200 PLD-500/ PLD-1250 PLD-5000 PLD-10000 PLD-500 PLD-10 M317 pld connector trimpot horizontal

    Schottky diode Die

    Abstract: "Schottky Diode" diode diode 10A 1n5819 die DIODE 1N5819 datasheets diode 1n5818 datasheets diode 1n5819 1N5817 diode 1n5819 data sheet
    Text: PROCESS CPD76V Schottky Diode 1.0A Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 32 x 32 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 26 x 26 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å GEOMETRY


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    PDF CPD76V CMLSH1-40 1N5817 1N5818 1N5819 Schottky diode Die "Schottky Diode" diode diode 10A 1n5819 die DIODE 1N5819 datasheets diode 1n5818 datasheets diode 1n5819 1N5817 diode 1n5819 data sheet

    constant current led driver lm317

    Abstract: trimpot 25 return 10k vertical PLD-10000 PLD-10 LED monitor repair PLD10K-CH PLD-500 laser bar driver trimpot 10k top adjust through hole trimpot horizontal
    Text: e Pb RoHS Compliant PLD-10000 Laser Diode Driver GENERAL DESCRIPTION FEATURES The PLD-10000 Laser Diode Driver combines the high performance you expect from a Wavelength component with two distinct improvements: low voltage operation from +5 V DC, and an Active Current Limit.


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    PDF PLD-10000 PLD-10000 15-Jan-10 PLD10000 PLD10000-00400-A constant current led driver lm317 trimpot 25 return 10k vertical PLD-10 LED monitor repair PLD10K-CH PLD-500 laser bar driver trimpot 10k top adjust through hole trimpot horizontal

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23

    FULL WAVE RECTIFIER CIRCUITS

    Abstract: 1N5818 1N5817 1N5819
    Text: MOTOROLA Order this document by 1N5817/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifiers 1N5817 1N5818 1N5819 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,


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    PDF 1N5817/D 1N5817 1N5818 1N5819 1N5817 1N5819 FULL WAVE RECTIFIER CIRCUITS 1N5818

    1n5819 equivalent

    Abstract: No abstract text available
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    PDF 1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817 1N5818 1n5819 equivalent

    1N5817

    Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    PDF 1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D 1N5817RL 1N5818 1N5818RL 1N5819RL

    1n5819 equivalent

    Abstract: 1n5819
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    PDF 1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817 1N5818 1n5819 equivalent

    1N5817

    Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    PDF 1N5817, 1N5818, 1N5819 1N5817 1N5819 r14525 1N5817/D 1N5817RL 1N5818 1N5818RL 1N5819RL

    datasheets diode 1n5818

    Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    PDF 1N5817, 1N5818, 1N5819 1N5817 1N5819 r14525 1N5817/D datasheets diode 1n5818 1N5817RL 1N5818 1N5818RL 1N5819RL 1N5817-19

    schottky diode sod-123 marking code 120

    Abstract: marking code diode 14 1N5819WB diode sod-123 marking code 26 diode sod-123 marking code 120 marking code sr MARKING ME 123 1N5817WB 1N5818WB diode marking 14
    Text: 1N5817WB-1N5819WB 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Marking: 1N5817WB Marking Code: A0 1N5818WB Marking Code: ME 1N5819WB Marking Code: SR Top View Simplified outline SOD-123 and symbol Absolute Maximum Ratings Ta = 25OC


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    PDF 1N5817WB-1N5819WB 1N5817WB 1N5818WB 1N5819WB OD-123 1N5817WB 1N5818WB 1N5819WB schottky diode sod-123 marking code 120 marking code diode 14 diode sod-123 marking code 26 diode sod-123 marking code 120 marking code sr MARKING ME 123 diode marking 14

    "Power Diode"

    Abstract: 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS 10 Ampere Schottky bridge 1N5817 diode FULL WAVE RECTIFIER CIRCUITS Full wave rectifier datasheet 1N5818RLG 1N5819 1N5817 1N5817G
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    PDF 1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D "Power Diode" 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS 10 Ampere Schottky bridge 1N5817 diode FULL WAVE RECTIFIER CIRCUITS Full wave rectifier datasheet 1N5818RLG 1N5817G

    Untitled

    Abstract: No abstract text available
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    PDF 1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D

    Untitled

    Abstract: No abstract text available
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    PDF 1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D

    1N5817

    Abstract: 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG 1N5819 Equivalent for 1N5819
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    PDF 1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG Equivalent for 1N5819

    1N5818WB

    Abstract: 1N5819WB diode sod-123 marking code 120 1N5817WB
    Text: 1N5817WB-1N5819WB 1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Top View Marking Code: 1N5817WB: A0 1N5818WB: ME 1N5819WB: SR Simplified outline SOD-123 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol


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    PDF 1N5817WB-1N5819WB 1N5817WB: 1N5818WB: 1N5819WB: OD-123 1N5817WB 1N5818WB 1N5819WB OD-123 1N5818WB 1N5819WB diode sod-123 marking code 120 1N5817WB

    Germanium diode

    Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
    Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes


    OCR Scan
    PDF 1N34A 1N38A 1N60A 1N100A 1N270 1N276 1N277 1N456 1N459 1N456A Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode

    1N4007 diode SOD 80

    Abstract: 1N4148 SMA 2n2222a SOT23 smd 2n3055 2N2369 SOT-23 2n3904 smd 2n3055 SOT-23 TIP41 SOT23 2N6520 sot23 SMD DIODE 1N4006
    Text: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 BAS28 CLL914 CMPD 914 CMPD2836 CMPD2838 CMPD7000 SOT-143 SOD-80 SOT-23 SOT-23 SOT-23 SOT-23 Dual, Isolated Leadless Switching Diode Single Switching Diode Dual, Common Anode Dual, Common Cathode


    OCR Scan
    PDF BAS28 CLL914 CMPD2836 CMPD2838 CMPD7000 CLL4448 CMPD4448 BAS56 CLL4150 CMPD4150 1N4007 diode SOD 80 1N4148 SMA 2n2222a SOT23 smd 2n3055 2N2369 SOT-23 2n3904 smd 2n3055 SOT-23 TIP41 SOT23 2N6520 sot23 SMD DIODE 1N4006

    1N4937 SMD

    Abstract: diode 1n4007 melf smd 2n5401 smd 1n4001 melf diode 1n4007 melf 2n2222a SOT223 1N4148 SOD-80 2n2222a SOT23 1N5819 SOD80 2N2369 SOT-23
    Text: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 CMPD 914 CLL914 CMPD28:i6 CMPD28IÌ8 CMPD7000 BAS28 SOT-23 SOD-80 SOT-23 SOT-23 SOT-23 SOT-143 Single Switching Diode Leadless Switching Diode Dual, Common Anode Dual, Common Cathode Dual, In Series


    OCR Scan
    PDF CLL914 CMPD28 CMPD28I CMPD7000 BAS28 CMPD4448 CLL4448 CMPD41 CLL4150 BAS56 1N4937 SMD diode 1n4007 melf smd 2n5401 smd 1n4001 melf diode 1n4007 melf 2n2222a SOT223 1N4148 SOD-80 2n2222a SOT23 1N5819 SOD80 2N2369 SOT-23

    motorola diode cross reference

    Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
    Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3


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    PDF 1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"