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    DIODE 1N5819 Search Results

    DIODE 1N5819 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 1N5819 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N5819 SOD-123

    Abstract: Reverse polarity pulse plating 1N5819* diode 1N5819 SOD123 1N5819 1N5819-CA2-R 1N5819L 1N5819L-CA2-R QW-R601-008 A1N5819
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N5819 DIODE SCHOTTKY BARRIER DIODE FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling


    Original     		PDF 1N5819 OD-123 1N5819L 1N5819-CA2-R 1N5819L-CA2-R QW-R601-008 1N5819 SOD-123 Reverse polarity pulse plating 1N5819* diode 1N5819 SOD123 1N5819 1N5819-CA2-R 1N5819L 1N5819L-CA2-R A1N5819

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N5819 DIODE SCHOTTKY BARRIER DIODE  FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling


    Original     		PDF 1N5819 OD-123 1N5819G-CA2-R QW-R601-008

    1N5819* diode

    Abstract: 1N5819 SOD-123 1N5819 diode 1N5819 SOD123 DIODE 1N5819 dc transistor r601 DIODE 3a sod-123 DIODE 1n5819 1N5819 1N5819L-CA2-R
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N5819 DIODE SCHOTTKY BARRIER DIODE „ FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling


    Original     		PDF 1N5819 OD-123 1N5819L-CA2-R 1N5819G-CA2-R QW-R601-008 1N5819* diode 1N5819 SOD-123 1N5819 diode 1N5819 SOD123 DIODE 1N5819 dc transistor r601 DIODE 3a sod-123 DIODE 1n5819 1N5819 1N5819L-CA2-R

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817-1N5819 SCHOTTKY BARRIER DIODE SOT-23-3L FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. 1. ANODE 3.CATHODE


    Original     		PDF OT-23-3L 1N5817-1N5819 OT-23-3L 1N5817: 1N5818 1N5819: 1N5817 1N5818 1N5819

    diode 1N5819

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817, 1N5819 SOT-23-3L SCHOTTKY DIODE - 1. ANODE FEATURES 3.CATHODE + Power dissipation PD : 300 mW Ta=25℃ Collector current IF : 1 A Collector-base voltage VR : 1N5817:


    Original     		PDF OT-23-3L 1N5817, 1N5819 OT-23-3L 1N5817: 1N5819: 1N5817 diode 1N5819

    sot-23 Marking sj

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817, 1N5819 SOT-23-3L SCHOTTKY DIODE FEATURES + 1. ANODE Power dissipation PD : 300 mW Ta=25℃ Collector current IO : 1A Collector-base voltage VR : 1N5817: 20 V 1N5819: 40


    Original     		PDF OT-23-3L 1N5817, 1N5819 OT-23-3L 1N5817: 1N5819: 1N5817 sot-23 Marking sj

    1N5819

    Abstract: 1N5817 1N5817 SJ diode 5819 5819 DIODE 1N5817 schottky diode symbol marking SJ 1N5819 sot-23 1N5817 diode sot-23 Marking sj
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO.,LTD SOT-23-3L Plastic-Encapsulate Diode www.haorm.cn 1N5817, 1N5819 tel:86-769-87058050 SOT-23-3L SCHOTTKY DIODE FEATURES + 1. ANODE Power dissipation PD : 300 mW Ta=25℃ Collector current 1A IO : Collector-base voltage


    Original     		PDF OT-23-3L 1N5817, 1N5819 OT-23-3L 1N5817: 1N5819: 1N5817 1N5819 1N5817 1N5817 SJ diode 5819 5819 DIODE 1N5817 schottky diode symbol marking SJ 1N5819 sot-23 1N5817 diode sot-23 Marking sj

    1N5819 sensitron

    Abstract: 1N5819UR-1 1N5819-1 DO-213AB
    Text: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. C HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.


    Original     		PDF 1N5819-1 1N5819UR-1 1N5819 sensitron 1N5819UR-1 1N5819-1 DO-213AB

    1n5819 melf

    Abstract: 1N5819-1 JANTX 1N5819UR-1 MELF DL41 1N5819 1N5819-1 1.1N5819 DO-213AB Schottky Barrier Diode
    Text: tSENSITRON 1N5819-1 1N5819UR-1 SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. A HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise


    Original     		PDF 1N5819-1 1N5819UR-1 1n5819 melf 1N5819-1 JANTX 1N5819UR-1 MELF DL41 1N5819 1N5819-1 1.1N5819 DO-213AB Schottky Barrier Diode

    1N5819UR-1

    Abstract: 1n5819 melf 1N5819-1 DO-213AB 1N5819UR1
    Text: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. o All ratings are at TA = 25 C unless otherwise specified.


    Original     		PDF 1N5819-1 1N5819UR-1 1N5819UR-1 1n5819 melf 1N5819-1 DO-213AB 1N5819UR1

    1N5819-1 JAN

    Abstract: 1N5819UR1 JANTX 1N5819-1 JANTX 1N5819UR-1 1N5819UR1 JANTXV
    Text: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. o All ratings are at TA = 25 C unless otherwise specified.


    Original     		PDF 1N5819-1 1N5819UR-1 1N5819-1 JAN 1N5819UR1 JANTX 1N5819-1 JANTX 1N5819UR1 JANTXV

    SK-0028A

    Abstract: Schottky diode Die IR SK-002 1n5819 die schottky diode
    Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0028A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0028A Type：1N5819 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag


    Original     		PDF SK-0028A Type1N5819 size28mils 28mils0 thickness12 038mm area20 padAnode24mils 24mils0 SK-0028A Schottky diode Die IR SK-002 1n5819 die schottky diode

    diode 1N5819

    Abstract: No abstract text available
    Text: Axial Lead Schottky Diode Package 1N5819 Datasheet Features • Low forward voltage: 550 mV @ IF = 1 A • High reverse breakdown voltage:  30 V • RoHS Compliant • Hermetically Sealed Axial Lead Glass Package Description The Aeroflex/Metelics 1N5819 silicon Schottky diode offers a large reverse breakdown voltage with low


    Original     		PDF 1N5819 1N5819 diode 1N5819

    RB160-40

    Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
    Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148


    Original     		PDF CDSL4148 LL4148 PMLL4148 RLS4148 CDSF335 BAS16WS CDSF4148 1N4148WS RB160-40 KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11

    1.1N5819

    Abstract: 1n5819 melf 1N5819UR-1 d 2038 datasheets diode 1n5819 1N5819-1 SS5819UR-1 DO-213AB SS5819-1 PIV RATING 14 V DIODE
    Text: SS5819-1 SS5819UR-1 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2038, REV. - HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.


    Original     		PDF SS5819-1 SS5819UR-1 1.1N5819 1n5819 melf 1N5819UR-1 d 2038 datasheets diode 1n5819 1N5819-1 SS5819UR-1 DO-213AB SS5819-1 PIV RATING 14 V DIODE

    5819-1

    Abstract: SS5819UR-1 1N5819UR-1 1N5819-1 DO-213AB SS5819-1
    Text: SS5819-1 SS5819UR-1 SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2038, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.


    Original     		PDF SS5819-1 SS5819UR-1 5819-1 SS5819UR-1 1N5819UR-1 1N5819-1 DO-213AB SS5819-1

    Schottky diode Die

    Abstract: "Schottky Diode" diode diode 10A 1n5819 die DIODE 1N5819 datasheets diode 1n5818 datasheets diode 1n5819 1N5817 diode 1n5819 data sheet
    Text: PROCESS CPD76V Schottky Diode 1.0A Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 32 x 32 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 26 x 26 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å GEOMETRY


    Original     		PDF CPD76V CMLSH1-40 1N5817 1N5818 1N5819 Schottky diode Die "Schottky Diode" diode diode 10A 1n5819 die DIODE 1N5819 datasheets diode 1n5818 datasheets diode 1n5819 1N5817 diode 1n5819 data sheet

    1N5819

    Abstract: 1N5817-1N5819 datasheets diode 1n5818 DIODE 1n5819 1N5817 1N5817-T3 1N5817-TB 1N5818 1N5818-T3 1N5818-TB
    Text: 1N5817 – 1N5819 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability


    Original     		PDF 1N5817 1N5819 DO-41 DO-41, MIL-STD-202, 1N5819 1N5817-1N5819 datasheets diode 1n5818 DIODE 1n5819 1N5817 1N5817-T3 1N5817-TB 1N5818 1N5818-T3 1N5818-TB

    1N5819W

    Abstract: No abstract text available
    Text: Certificate TH97/10561QM 1N5819W SURFACE MOUNT SCHOTTKY BARRIER DIODE Low Power Loss, Low Forward Voltage Drop High Efficiency High Surge Capability High Current Capability Pb / RoHS Free * * * * 1.15 1.05 MECHANICAL DATA : 0.135 0.127 1.65 1.55 2.7 2.6 0.6


    Original     		PDF TH97/10561QM 1N5819W OD-123 TW00/17276EM OD-123, MIL-STD-202, 1N5819W

    1N5819CSM4

    Abstract: No abstract text available
    Text: SCHOTTKY RECTIFIER DIODE 1N5819CSM4 • Hermetic Ceramic Surface Mount Package MO-041BA • VRRM = 40V, IF = 1.0A • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VRRM VRWM IF(AV)


    Original     		PDF 1N5819CSM4 MO-041BA) 100mA 1N5819CSM4-JQRS 1N5819CSM4

    q217

    Abstract: No abstract text available
    Text: SCHOTTKY RECTIFIER DIODE 1N5819CSM4 • Hermetic Ceramic Surface Mount Package MO-041BA • VRRM = 40V, IF = 1.0A • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VRRM VRWM IF(AV)


    Original     		PDF 1N5819CSM4 MO-041BA) 100mA 1N5819CSM4-JQRS q217

    Germanium diode

    Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
    Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes


    OCR Scan     		PDF 1N34A 1N38A 1N60A 1N100A 1N270 1N276 1N277 1N456 1N459 1N456A Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode

    1N4007 diode SOD 80

    Abstract: 1N4148 SMA 2n2222a SOT23 smd 2n3055 2N2369 SOT-23 2n3904 smd 2n3055 SOT-23 TIP41 SOT23 2N6520 sot23 SMD DIODE 1N4006
    Text: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 BAS28 CLL914 CMPD 914 CMPD2836 CMPD2838 CMPD7000 SOT-143 SOD-80 SOT-23 SOT-23 SOT-23 SOT-23 Dual, Isolated Leadless Switching Diode Single Switching Diode Dual, Common Anode Dual, Common Cathode


    OCR Scan     		PDF BAS28 CLL914 CMPD2836 CMPD2838 CMPD7000 CLL4448 CMPD4448 BAS56 CLL4150 CMPD4150 1N4007 diode SOD 80 1N4148 SMA 2n2222a SOT23 smd 2n3055 2N2369 SOT-23 2n3904 smd 2n3055 SOT-23 TIP41 SOT23 2N6520 sot23 SMD DIODE 1N4006

    1N4937 SMD

    Abstract: diode 1n4007 melf smd 2n5401 smd 1n4001 melf diode 1n4007 melf 2n2222a SOT223 1N4148 SOD-80 2n2222a SOT23 1N5819 SOD80 2N2369 SOT-23
    Text: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 CMPD 914 CLL914 CMPD28:i6 CMPD28IÌ8 CMPD7000 BAS28 SOT-23 SOD-80 SOT-23 SOT-23 SOT-23 SOT-143 Single Switching Diode Leadless Switching Diode Dual, Common Anode Dual, Common Cathode Dual, In Series


    OCR Scan     		PDF CLL914 CMPD28 CMPD28I CMPD7000 BAS28 CMPD4448 CLL4448 CMPD41 CLL4150 BAS56 1N4937 SMD diode 1n4007 melf smd 2n5401 smd 1n4001 melf diode 1n4007 melf 2n2222a SOT223 1N4148 SOD-80 2n2222a SOT23 1N5819 SOD80 2N2369 SOT-23