NX8571SCxxxQ-BA
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8571SCxxxQ-BA 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571SCxxxQ-BA is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8571SCxxxQ-BA
NX8571SCxxxQ-BA
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon PIN Diode BA 586 Preliminary Data • Current-controlled RF resistor for switching and attenuating applications. • Frequency range above 1 MHz • Designed for low IM distortion Type Marking Ordering Code tape and reel BA 586 white P Q62702-A930
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Q62702-A930
OD-123
CHA07001
0535b05
00bbS71
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon PIN Diode BA 886 Preliminary Data • Current-controlled RF resistor for switching and attenuating applications • Frequency range above 1 MHz • Designed for low IM distortion Type Marking Ordering Code tape and reel BA 886 PC Q62702-A932
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Q62702-A932
OT-23
EHA07002
fiB35b05
00bb5Ã
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05Z5.1
Abstract: irf 1820 Irf 1540 N 05Z5.6 05Z12Y 05Z6.2 05Z12 05Z16 05Z6.8 05Z5.6Y
Text: b7 TOSHIBA { DI SCRET E/ OP TO } 9097250 T O SH I BA dF D IS C R E TE/OPTO > 05Z5.1 -05Z24 I tchtesd 67C 09277 .* oocna? a 1 ~ 0 T ' / / ‘// • Silicon Planar Type Zener Diode Unit in mm CONSTANT VOLTAGE REGULATION APPLICATIONS. REFERENCE VOLTAGE APPLICATIONS.
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-05Z24
500mW
DO-35
BO-40
05Z5.1
irf 1820
Irf 1540 N
05Z5.6
05Z12Y
05Z6.2
05Z12
05Z16
05Z6.8
05Z5.6Y
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Untitled
Abstract: No abstract text available
Text: T O S H I B A -CDISCRETE/OPTOÏ 9097250 TOSH I BA <D ISCRETE/OPTO — - ,67C 092 94 Silicon Epitaxial Planar Type*_ D 'T~03 ~Q< S Î 1N4606 Diode TENTATIVE Unit in mm COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.
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1N4606
DO-35
SC-40
100mA
200mA
250mA
400mA
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Untitled
Abstract: No abstract text available
Text: S /a v M * - K U 7 S W - I * Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S40HC3 Package I MTO-3P -, lo-o.i 4>33±0-2 Type No. » Polarity > T jl2 5 ° C U S V f = 0.40 V 5.0 ±0-3 2.2 ±0-5 n^baö# W Date code 30V 40A Unit • mm ^+0.5 Vr \ ~| 2.0 ±0-3
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S40HC3
S40HC3
50HziE5K
J515-5
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Schottky Diode SC-62
Abstract: SE069
Text: COLLMER SEMICONPUCTOR INC MAE J> 52307^2 S E 0 6 9 o.95A 0QD1754 5fll • C O L _ ^ P 0 3 >- 1 I Outline Drawings SCHO TTKY BA RRIER DIODE 16 MAX. r 0.44 MAX. ■ Features • Surface mount device • Low V F • Super high speed switching.
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SE069
0QD1754
SC-62
500ns
0DG17SL,
Schottky Diode SC-62
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250 Amp current 1500 volt diode
Abstract: No abstract text available
Text: TEN TATIV E DATA 6CR6 TUNGSOL DIODE PENTODE MI NIATURE t y p e y _ 4 . COATED U N IP OT EN TIAL CATHODE MAX X 's T -5 -; HEATER 6 . 3 VOLTS MAX N 0 . 3 AMP. AC OR DC I max ANY MOUNTING P O S ITIO N BOTTOM VIEW MINIATURE BUTTON 7 P I N BA SE G U S S BULB 7 U
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s-210
250 Amp current 1500 volt diode
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1300313
Abstract: JE 13003
Text: b7 {DISCRETE/OPTO} 9 09 725 0 T OS HI BA D eT| TOTVHSG 000^355 5 | ~ D IS C R E T E / O P T O 6 7c 09355 ; D " Silicon EpitaxiaL P la n a r Ty pe 1SV100 Variable Capacitance Diode AM RADIO BAND TUNING APPLICATIONS. Unit in mm 4 .2 MAX. FEATURES: . High Capacitance Ratio : C]_v/c9V= 17(Min.)
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1SV100
a55MAX.
1300313
JE 13003
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tlp3526
Abstract: K/TLP3526
Text: GaAs IRED & PHOTO-TRIAC TLP3526 TRIAC DRIVER PROGRAMMABLE CONTROLLERS A C-OUTPUT MODULE SOLID STATE RELAY T h e TOSHI BA T L P 3 5 2 6 c o n s i s t s optically em itting * coupled diode in Peak O f f - S t a t e • Trigger to a a 16 l e a d V oltage LED C u r r e n t
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TLP3526
2500Vrms
tlp3526
K/TLP3526
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19GQ7
Abstract: rs tube Scans-0017328
Text: I9GQ7 TUNO-SOL T R IP L E DIODE M IN IA T U R E T Y P E O U T L IN E DRAWING BA SfNG DIAGRAM J E D E C 9QM J E D E C 6 -2 •8 7 5 ~ .7 5 0 ~ FOR T 'S A M A N D FM D E T E C T IO N 1 .9 3 8 T-6* 2 .1 8 8 M AX C O A T E D U N IP O T E N T IA L C A T H O D E
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19GQ7
BL00MFIELD,
RS-239
rs tube
Scans-0017328
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Untitled
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75M1AL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm INDUCTION HEATING APPLICATIONS. 5 0 ± 0 .5 . With Built-in Free Wheeling Diode. . High DC Current Gain : hpE=100 Min. (Ic=75A) . Low Saturation Voltage : VCE(sat)=2V(Max.)(IC=75A)
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MG75M1AL1
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0/b40 B2 RECTIFIER 400V
Abstract: IRGP4266 2.5/b40 B2 RECTIFIER 400V
Text: IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V C G G IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C C G G VCE(ON) typ. = 1.7V @ IC = 75A E IRGP4266PbF TO-247AC n-channel Applications • Industrial Motor Drive Inverters
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IRGP4266PbF
IRGP4266-EPbF
IRGP4266-EPbF
O-247AD
O-247AC
O-247AC
0/b40 B2 RECTIFIER 400V
IRGP4266
2.5/b40 B2 RECTIFIER 400V
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BA389 PIN Diode
Abstract: ba389 BA284 V/BA389 PIN Diode BA389 diode
Text: ~ ä fl 8236320 SIEMENS/ Diodes ] > F |f l2 3 b 3 a o 001 4552 i S P C L , SEMÎCÔNÔS ~ 880 14252 D T ~ 0 1 - S Silicon RF switching diodes Glass package DO 35 Type Characteristics f A = 25°C) VR Applications Figure VHF tuners 10 Applications Figure
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BA282
BA284
BA389 PIN Diode
ba389
BA284
V/BA389 PIN Diode
BA389 diode
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Untitled
Abstract: No abstract text available
Text: CM100RX-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Six IGBTMOD + Brake NX-Series Module 100 Amperes/1200 Volts AN AH AL AK AJ AC AD AL AL AM AL AM AM AK A D E F G AP AJ AT AR DETAIL "A" AA(4 PLACES) 35 P AUAL 12 11
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CM100RX-24A
Amperes/1200
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AL1510
Abstract: FL4010 ag204 IN5822 diode ag208 IN4007 bridge rectifier ic IN4007S IN5405 diode AG206 Diode IN5398
Text: 1. Q U IC K R E F E R E N C E TABLE FOR R EC TIFIE R DIO D E 1-1 1 AMPERE TO 6 AMPERES GENERAL PURPOSE AXIAL LEAD SILICON RECTIFIER VF V @IO (DC) PACKAGE PAGE 50 100 200 300 400 500 600 800 1000 FWD SURGE (A) 1.0 IN4001 IN4002 1N4003 - IN4004 - IN4005 IN4006
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IN4001
1N4007
IN4001S
IN4007S
IN5391
IN5399
PS200
PS2010
IN5400
IN5408
AL1510
FL4010
ag204
IN5822 diode
ag208
IN4007 bridge rectifier ic
IN5405 diode
AG206
Diode IN5398
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BA00JC5WT
Abstract: BA50JC5T TO-220FP-3
Text: Secondary LDO Regulator Series for Local Power Supplies 1.5A Secondary LDO Regulators for Local Power Supplies BA□□JC5 Series,BA00JC5W Series No.09024EAT03 Description The BA□□JC5 are low-saturation regulators with an output current of 1.5 A and a voltage accuracy of 1%. A broad output
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BA00JC5W
09024EAT03
R0039A
BA00JC5WT
BA50JC5T
TO-220FP-3
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Untitled
Abstract: No abstract text available
Text: BA682.BA683 Vishay Telefunken Band Switching Diodes Features D D D D Silicon Planar Diodes Low differential forward resistance Low diode capacitance High reverse impedance Applications 94 9371 Band switching in VHF–tuners Order Instruction Type BA682 BA683
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BA682
BA683
BA682
BA682â
BA683â
D-74025
13-Feb-01
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BA282
Abstract: BA283
Text: BA282.BA283 Vishay Telefunken Band Switching Diodes Features D D D D Silicon Planar Diodes Low differential forward resistance Low diode capacitance High reverse impedance Applications 94 9367 Band switching in VHF–tuners Order Instruction Type Type Differentiation
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BA282
BA283
BA282
BA283
D-74025
13-Feb-01
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BA282a
Abstract: No abstract text available
Text: BA282.BA283 Vishay Telefunken Band Switching Diodes Features D D D D Silicon Planar Diodes Low differential forward resistance Low diode capacitance High reverse impedance Applications 94 9367 Band switching in VHF–tuners Order Instruction Type Type Differentiation
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BA282
BA283
BA282
BA282â
BA283â
D-74025
13-Feb-01
BA282a
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BA282
Abstract: BA283
Text: BA282.BA283 Vishay Telefunken Silicon Planar Diodes Features D Low differential forward resistance D Low diode capacitance D High reverse impedance Applications 94 9367 Band switching in VHF–tuners Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage
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BA282
BA283
01-Apr-99
D-74025
BA283
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Untitled
Abstract: No abstract text available
Text: BA982/BA983 Vishay Semiconductors Band Switching Diodes Features • • • • • • • Silicon Planar Diodes Low differential forward resistance e3 Low diode capacitance High reverse impedance Quadro Melf package Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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BA982/BA983
2002/95/EC
2002/96/EC
OD-80)
BA982
BA983
BA982-GS18
BA982-GS08
08-Apr-05
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MSOP-8 PFM light load
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD M7085 CMOS IC PFM STEP-DOWN DC-DC CONTROLLER DESCRIPTION The UTC M7085 step-down DC-DC Controller is optimized for use with a power PMOSFET. It utilize a Pulse-Frequency Modulation PFM control scheme that implies high efficiency
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M7085
M7085
operation100%
QW-R502-092,
MSOP-8 PFM light load
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DIODE S3V 70
Abstract: DIODE S3V 52 MOSFET 6A irfmg50 IRFMG50 IRFMG50D LSE 0149
Text: Data Sheet No. PD-9.711A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG5Q N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFMG50D
IRFMG50U
O-254
mil-8-19s00
I-404
DIODE S3V 70
DIODE S3V 52
MOSFET 6A irfmg50
IRFMG50
LSE 0149
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