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    DIODE DB 03 Search Results

    DIODE DB 03 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE DB 03 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Attenuators • Fixed and Digital • GaAs, PIN Diode, & Schottky Diode Technology • RF Relay • Thin Film MIC Technology • Solid State Connectorized • 1 Bit Through 7 Bit Attenuators wtih 0.1 dB LSB’s Through 63.5 dB Range • Full Military Screening Available


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    DC-310 PDF

    Untitled

    Abstract: No abstract text available
    Text: Attenuators • Fixed and Digital • GaAs, PIN Diode, & Schottky Diode Technology • RF Relay • Thin Film MIC Technology 138 • Solid State Connectorized • 1 Bit Through 8 Bit Attenuators wtih 0.1 dB LSB’s Through 127 dB Range • Full Military Screening Available


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    DC-3000 DAT15015-X DAT15073 DA0879 DAT71987 DAT76191 DAT76199 DAT86198 PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATURES MODEL NO. DAT76191 2200 - 2800 MHz 0.5 dB LSB, 47.5 dB Range 3.2 dB Insertion Loss TTL Control Replaceable SMA Connectors 7 BIT PIN Diode 7 Section Attenuator RF IN/OUT PART IDENTIFICATION .10 0.38 ±.02 2 PLACES 16 dB 1.550 .10 RF IN/OUT • .25


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    DAT76191 PDF

    DAT76191

    Abstract: No abstract text available
    Text: FEATURES MODEL NO. DAT76191 2200 - 2800 MHz 0.5 dB LSB, 47.5 dB Range 3.2 dB Insertion Loss TTL Control Replaceable SMA Connectors 7 BIT PIN Diode 7 Section Attenuator RF IN/OUT PART IDENTIFICATION .10 0.38 ±.02 2 PLACES 16 dB 1.550 .10 RF IN/OUT • .25


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    DAT76191 DAT76191 PDF

    Untitled

    Abstract: No abstract text available
    Text: F E AT U R E S MODEL NO. DAT761 91 2200 - 2800 MHz 0.5 dB LSB, 47.5 dB Range 3.2 dB Insertion Loss TTL Control Replaceable SMA Connectors 7 BIT PIN Diode 7 Section Attenuator RF IN/OUT PART IDENTIFICATION .10 0.38 ±.02 2 PLACES 16 dB 1.550 .10 RF IN/OUT •


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    DAT761 PDF

    Untitled

    Abstract: No abstract text available
    Text: F E AT U R E S MODEL NO. DAT761 91 2200 - 2800 MHz 0.5 dB LSB, 47.5 dB Range 3.2 dB Insertion Loss TTL Control Replaceable SMA Connectors 7 BIT PIN Diode 7 Section Attenuator RF IN/OUT PART IDENTIFICATION .10 0.38 ±.02 2 PLACES 16 dB 1.550 .10 RF IN/OUT •


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    DAT761 25rol PDF

    Untitled

    Abstract: No abstract text available
    Text: High IP3 PIN Diode Variable Attenuator 0.60-1.2 GHz Features • • • • • • Large Useable Bandwidth: 0.60 GHz to 1.2 GHz 1.0 dB Insertion Loss 14 dB Return Loss, Typical 25 dB Attenuation, Typical +50 dBm IP3 SOIC-8 Package MA4VAT907-1061T V1 PIN Configuration


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    MA4VAT907-1061T PDF

    100C15

    Abstract: DA0295
    Text: F E AT U R E S MODEL NO. 100C15 95 30 - 500 MHz 50 mA, +5 VDC 0.5 dB LSB, 63.5 dB Range TTL Control SMA Connectors See DA0295 for 38 Pin DIP Version 7 BIT PIN Diode 7 Section Attenuator RF IN/OUT J1 PART IDENTIFICATION RF IN/OUT J2 2.836 0.08 0.08 J1 16 dB


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    100C15 DA0295 PDF

    100C15

    Abstract: DA0285
    Text: F E AT U R E S MODEL NO. 100C15 8 5 30 - 500 MHz 30 mA, +5 VDC 0.5 dB LSB, 63.5 dB Range CMOS Control SMA Connectors See DA0285 for 38 Pin DIP Version 7 BIT PIN Diode 7 Section Attenuator RF IN/OUT J1 PART IDENTIFICATION RF IN/OUT J2 2.836 0.08 0.08 J1 16 dB


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    100C15 DA0285 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEDIUM-HIGH POWER PIN DIODE SWITCH MODEL SWX-A09S ELECTRICAL SPECIFICATIONS Frequency Range: 130-155 MHz Isolation: 20 dB minim um Insertion Loss: 0.5 dB maxi m um VSWR: 5:1 Worst Case 1.5 nominal at highest power Switching Speed: 20 microsec typical RF Power:


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    100mA; 24VDC SWX-A09S 12dBm MIC-E46S 100mv 150mv 200mv 400mv PDF

    v1h diode

    Abstract: A50fl
    Text: FEA TU R ES MODEL NO. CDS0669 • 1 0 0 -2 0 0 0 MHz ■ 80 dB Isolation & ■ 1 dB Insertion Loss SP3T PIN Diode SP3T ■ TTL BCD Control ■ Non-Reflective ■ Replaceable SMA Connectors "O " -0 " E1 E2 QND J3 GND GND +5V V a 1 1 1 LEADS 50fl 1.50 t .03


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    CDS0669 Hz/100 v1h diode A50fl PDF

    TTL pin outs

    Abstract: No abstract text available
    Text: MEDIUM-HIGH POWER PIN DIODE SWITCH MODEL SWX-A09S ELECTRICAL SPECIFICATIONS Frequency Range: 130-155 MHz Isolation: 20 dB minim um Insertion Loss: 0.5 dB maxi m um VSWR: 5:1 Worst Case 1.5 nominal at highest power Switching Speed: 20 microsec typical RF Power:


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    100mA; 24VDC SWX-A09S 12dBm MIC-E46S 100mv 150mv 200mv 400mv TTL pin outs PDF

    TTL pin outs

    Abstract: MIC-E46S SWX-A09S
    Text: MEDIUM-HIGH POWER PIN DIODE SWITCH MODEL SWX-A09S ELECTRICAL SPECIFICATIONS Frequency Range: 130-155 MHz Isolation: 20 dB minim um Insertion Loss: 0.5 dB maxi m um VSWR: 5:1 Worst Case 1.5 nominal at highest power Switching Speed: 20 microsec typical RF Power:


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    SWX-A09S 100mA; 24VDC MIC-E46S 12dBm 100mv 150mv 200mv 400mv TTL pin outs MIC-E46S SWX-A09S PDF

    100C1757

    Abstract: DA0617 DA0717
    Text: FEATURES MODEL NO. 100C1757 45 - 200 MHz 25 nSec Switching Speed 0.5 dB LSB, 63.5 dB Range TTL Control SMA Connectors See DA0617 for 38 Pin DIP Version See DA0717 for Surface Mount Version 7 BIT PART IDENTIFICATION Schottky Diode 7 Section Attenuator RF IN/OUT


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    100C1757 DA0617 DA0717 100C1757 PDF

    ghz detector

    Abstract: diode Robinson Laboratories schottky diode
    Text: NEW PRODUCT RELEASE TWO WEEK DELIVERY! Schottky Diode Detector Schottky Diode Detector, Model 9045-001 operates over the frequency range of 0.5 to 18 GHz. Sensitivity is 2000 mV/mW minimum with output voltage flatness versus frequency of ±1.5 dB maximum. TSS is -51 dBm


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    MA4SW100

    Abstract: 9620* diode MA4SW100-300
    Text: Monolithic PIN Diode Switches MA4SW100, 200, 300 V3.00 Features ● ● ● ● Broadband Performance: Specified 1-18 GHz Usable 1-26 GHz SPST, SPDT Usable 1-20 GHz (SP3T) Insertion Loss 1.2 dB to 18 GHz Isolation 40 dB to 18 GHz Single Chip Replaces up to


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    MA4SW100, MA4SW100-300 MA4SW200 MA4SW300 MA4SW100 9620* diode PDF

    92256

    Abstract: 44750 7432 truth table 90087
    Text: AlGaAs SPST Non-Reflective PIN Diode Switch MA4AGSW1A Rev 2.0 FEATURES • • • • Ultra Broad Bandwidth: 10 GHz to 50 GHz Functional Bandwidth: 100 MHz to 70 GHz 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz M/A-COM’s unique patent pending AlGaAs


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    1GM1

    Abstract: 1GM1- 4220 Agilent JEDEC J-STD-033b 1GG5-8205 1gg5 1gm1-4220 TC626P Agilent 1gg5 TC626 8205
    Text: Agilent 1GG5-8205 Packaged 13.5 GHz GaAs Diode Limiter TC626P Data Sheet Features • ESD Protection: 3000V Human Body Model • Insertion Loss: 1.0 dB Typ. • Port Match: S11 and S22 –15 dB Typ. • Power Handling: P–1dB 25 dBm Typ. • Distortion: SHI >100 dBm Typ.


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    1GG5-8205 TC626P TC626P TC626P/rev 1GM1 1GM1- 4220 Agilent JEDEC J-STD-033b 1GG5-8205 1gg5 1gm1-4220 Agilent 1gg5 TC626 8205 PDF

    TG9006

    Abstract: 5V712
    Text: Digital Attenuators Depending on switching speed requirements, either Pin Diode or GaAs Switches are used for the control elements. Attenuation steps are available from 0.1 dB to 63.5 dB. F req u en cy Range M Hz M odel TAD3186 1 A \6 0 0 ~ T AD5006 TAD5007


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    TAD3186 AD5006 TL9003 TGLR9025 TG9006 5V712 PDF

    Untitled

    Abstract: No abstract text available
    Text: m an A M P com pany Monolithic PIN Diode Switches MA4SW100,200,300 V3.00 Features • Broadband Performance: Specified 1-18 GHz Usable 1-26 GHz SPST, SPDT Usable 1-20 GHz (SP3T) • Insertion Loss 1.2 dB to 18 GHz Isolation 40 dB to 18 GHz • Single Chip Replaces up to


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    MA4SW100 MA4SW100-300 MA4SW100, MA4SW200 MA4SW300 PDF

    Untitled

    Abstract: No abstract text available
    Text: MSWSE-040-10 PIN Diode Series Switch Element 1 1 2 2 2 0805P Features Description • Supports up to 40 watts power when cold switched • Low Insertion Loss 0.25 dB typical up to 2.7 GHz • Medium Isolation 11 dB typical up to 2.7 GHz A broadband, high linearity, medium power series switch


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    MSWSE-040-10 0805P) A17089 PDF

    MSWSE-040-10

    Abstract: No abstract text available
    Text: MSWSE-040-10 PIN Diode Series Switch Element 1 1 2 2 2 0805P Features Description • Supports up to 40 watts power when cold switched • Low Insertion Loss 0.25 dB typical up to 2.7 GHz • Medium Isolation 11 dB typical up to 2.7 GHz A broadband, high linearity, medium power series switch


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    MSWSE-040-10 0805P) A17089 MSWSE-040-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: F E AT U R E S MODEL NO. 100C17 57 45 - 200 MHz 25 nSec Switching Speed 0.5 dB LSB, 63.5 dB Range TTL Control SMA Connectors See DA0617 for 38 Pin DIP Version See DA0717 for Surface Mount Version 7 BIT Schottky Diode 7 Section Attenuator RF IN/OUT J2 RF IN/OUT


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    DA0617 DA0717 100C17 PDF

    VBT1-S5-S12-SMT

    Abstract: atc 1117 0-5 v to 4-20 ma converter
    Text: MSWSE-040-10 PIN Diode Series Switch Element 1 1 2 2 2 0805P Features Description • Supports up to 40 watts power when cold switched • Low Insertion Loss 0.25 dB typical up to 2.7 GHz • Medium Isolation 11 dB typical up to 2.7 GHz A broadband, high linearity, medium power series switch


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    MSWSE-040-10 0805P) A17089 VBT1-S5-S12-SMT atc 1117 0-5 v to 4-20 ma converter PDF