Untitled
Abstract: No abstract text available
Text: SONY 1T411 Variable Capacitance Diode Description The IT-411 is a variable capacitance diode designed for analog cellular phone and It has a super miniature package. Features • Super miniature package • Small series resistance 0.40il Max. f=470MHz • Large capacitance ratio
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1T411
IT-411
470MHz)
M-235
A3fl23Ã
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IC-3368
Abstract: smd transistor 9j UPA1600GS iso 1207 PA-1600 20PIN MIL GRADE TRANSISTOR ARRAY PA1600 SMD transistor 6J U
Text: DATA SHEET NEC FIELD EFFECT POWER TRANSISTOR i COMPOUND — ¿¿PA1600 r MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The juPA1600 is M onolithic N-channel Pow er M O S FET A rray that built CONNECTION DIAGRAM in 8 circuits and Gate Protection Diode designed for LED, Relay,
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uPA1600
IC-3368
smd transistor 9j
UPA1600GS
iso 1207
PA-1600
20PIN
MIL GRADE TRANSISTOR ARRAY
PA1600
SMD transistor 6J U
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UTI03
Abstract: 1di480a 3A1T
Text: 1DI48OA-O55 480a l- ; : Outline Drawings u POWER TRANSISTOR MODULE I F e a tu re s • fiSiWEE High Voltage • 7 U — sfr-f l) >9*?4 it —K A iK • Including Free W heeling Diode ASO A’i7 £ i . '• Excellent Safe.Operating Area ! • JfiStT6 Insulated Type
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1DI48OA-O55
UTI03
1di480a
3A1T
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Untitled
Abstract: No abstract text available
Text: G E H PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS DESCRIPTION The 4N 25 , 4N 26, 4N 27 , and 4 N 2 8 series of optocouplers ' t t H 6.86 MAX B10 w I Πcoupled to a gallium arsenide diode. _ i _ 8.89 8.38 have an NPN silicon planar phototransistor optically
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I2-54!
C1685
C1296A
74bbfl51
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7476 counter
Abstract: 7476 counter down 7476 up down counter ci 7476 74LS CD4029BC CD4029BCN CD4029BCSJ CD4029BCWM M16B
Text: Revised January 1999 S E M I C O N D U C T O R TM General Description All inputs are protected against static discharge by diode clamps to both V qq and Vgs- Features • Wide supply voltage range: ■ High noise immunity: 3V to 15V 0.45 VDD typ. ■ Low power TTL compatibility:
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CD4029BC
CD4029BC
7476 counter
7476 counter down
7476 up down counter
ci 7476
74LS
CD4029BCN
CD4029BCSJ
CD4029BCWM
M16B
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PDF
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A6p DIODE
Abstract: No abstract text available
Text: E R C 8 - 0 4 5 A '> 3 SCHOTTKY BARRIER DIODE ’ Features • I& V f Low VF Super high speed sw itch in g . m m m & m Connection Diagram High reliability by planer design. l^ • E lS s I Applications (D High speed pow er sw itch in g . M a xim u m Ratings and Characteristics
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500ns
I95t/R89)
A6p DIODE
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DHM3K20
Abstract: DIODE IT4
Text: HIGH VOLTAGE-FAST RECOVERY DIODE DHM3K20 Unit in mm inch •ft ft ■ FEATURES • H ig h v o lta g e re c tific a tio n fo r o ffice eq u ip m ent. • D iffused-junction. • E x c e lle n t h ig h te m p e ra tu re o u tp u t c h a r a c te ristic s.
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DHM3K20
DHM3K20
75kHz
DIODE IT4
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DIODE IT4
Abstract: STTA506D Diode d4 1kva STTA5 STTB506D diode id4 STTA50
Text: APPLICATION NOTE TURBOSWITCHΤΜ IN AN ASYNCHRONOUS MOTOR DRIVE B.Rivet The basic schematic of an asynchronous motor drive is shown in fig.1 Fig.1 : Basic schematic of an asynchronous motor drive. Va D1 T1 IT1 T2 D2 D3 T3 ID1 IL T5 T4 IT4 ID4 D4 T6 D6
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DIODE IT4
Abstract: STTA506D AN877 STTB506D DIODE T5 Diode d4 switching transistor
Text: AN877 APPLICATION NOTE TURBOSWITCH IN AN ASYNCHRONOUS MOTOR DRIVE The basic schematic of an asynchronous motor drive is shown in Figure 1 Figure 1. Basic schematic of an asynchronous motor drive. Va D1 T1 IT1 T2 D2 T3 D3 ID1 IL T5 T4 IT4 ID4 D4 T6 D5 D6
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AN877
DIODE IT4
STTA506D
AN877
STTB506D
DIODE T5
Diode d4
switching transistor
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DIODE IT4
Abstract: T4 DIODE 24 TRANSISTOR MAKING freewheeling diode 5A STTA506D DIODE T4 DIODE T5 fast recovery diode 600v 5A STTB506D 1kva
Text: APPLICATION NOTE TURBOSWITCHΤΜ IN AN ASYNCHRONOUS MOTOR DRIVE B.Rivet The basic schematic of an asynchronous motor drive is shown in fig.1 Fig.1 : Basic schematic of an asynchronous motor drive. Va D1 T1 IT1 T2 D2 D3 T3 ID1 IL T5 T4 IT4 ID4 D4 T6 D6
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2Sk176 HITACHI
Abstract: 2SK176 2SK1760 HITACHI 2Sk176 HITACHI 2SK* TO-3
Text: 2SK1760 4 iH b 2 D 5 DD13014 510 «H IT4 H IT AC HI/ OPTOEL ECT RONICS) blE D SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQ U EN CY POWER AMPLIFIER • FEATURES • High Speed Switching. • High Cutoff Frequency. • Enhancement-Mode.
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2SK1760)
DD13014
-2SK176<
2Sk176 HITACHI
2SK176
2SK1760
HITACHI 2Sk176
HITACHI 2SK* TO-3
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Untitled
Abstract: No abstract text available
Text: PD 9.1663 International IOR Rectifier IR F R /U 9310 PRELIMINARY HEXFET Power MOSFET • • • • • • P-Channel Surface Mount IRFR9310 Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated Voss = -400V R D S (on) = 7 .0 Q
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IRFR9310)
IRFU9310)
-400V
O-251AA
0D26B20
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Untitled
Abstract: No abstract text available
Text: National Semiconductor" June 1996 NDS8433 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS8433
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2SK557
Abstract: 12A 250v 314 hitachi ha-1 IT 314 2SK55 2SK556 A111-1 IT314 Hitachi Scans-001 ISV10
Text: bl E D 44*^205 0013DS1 Ü74 IHIT4 2SK556,2SK557 H IT A C H I/C O P T O E L E C T R O N IC S » S IL IC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance. • High Speed Switching. • Low Drive Current. • No Secondary Breakdown.
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00130S1
2SK556
2SK557
2SK556,
2SK557
12A 250v 314
hitachi ha-1
IT 314
2SK55
A111-1
IT314
Hitachi Scans-001
ISV10
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2SK511
Abstract: 296 mos fet ED44
Text: bl E D 44<ìb2DS DG13073 OST « H I T 4 2SK511 H I T A C H I / OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING HIGH FREQUENCY POWER AMPLIFIER i n • FEATURES • Superior High Frequency Characteristics. • Low Input and Output Capacitance.
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DG13073
2SK511
0D13G75
2SK511
296 mos fet
ED44
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CQ 419
Abstract: oms 450 ifr mosfet 2SK2165-01 SC-65 2SK2165
Text: 2SK2165-01 FUJI PO W ER M O S-F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features Outline Drawings • Hiiih current • Low on-resistance • No secondary breakdown • Low driving power • Hicjh forward Transconductance • Avalanche-proof
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2SK2165-01
SC-65
CQ 419
oms 450
ifr mosfet
2SK2165-01
SC-65
2SK2165
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transistor c1718
Abstract: No abstract text available
Text: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS 4N32 4N33 PACKAGE DIMENSIONS DESCRIPTION The 4N32 and 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. FEATURES & APPLICATIONS High isolation resistance— 101,ft
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E90700
ST1603A
74bbfiSl
C1686
C1894
C1717
C1718
C1719
74bbfl51
74bbfi51
transistor c1718
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bsr melcher
Abstract: BSR 2024-7
Text: SR-Fomily D C - D C Converters < 4 0 W Industrial Environment SR-Family 20 W DC-DC Converters Single output of 5 ,1 2 ,1 5 or 24 V DC Input voltage up to 180 V DC • Full input to output isolation 2.5 kVrms i^ixEffici&ntiinp^ • Continuous no-load and short circuit proof
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97/IN
bsr melcher
BSR 2024-7
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IN5711
Abstract: subtleties settling time TELEDYNE PHILBRICK multiplier 2N4260 Avtech unfaithful AD835 nanosecond pulse generator an128f TELEDYNE PHILBRICK converter
Text: Application Note 128 June 2010 2 Nanosecond, .1% Resolution Settling Time Measurement for Wideband Amplifiers Quantifying Quick Quiescence Jim Williams INTRODUCTION Instrumentation, waveform synthesis, data acquisition, feedback control systems and other application areas utilize wideband amplifiers. Current generation components
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HP1105/1106/8A.
50mV/DIV
200ps/DIV
AN128
an128f
AN128-23
AN128-24
IN5711
subtleties settling time
TELEDYNE PHILBRICK multiplier
2N4260
Avtech
unfaithful
AD835
nanosecond pulse generator
an128f
TELEDYNE PHILBRICK converter
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sirfstar IV
Abstract: SiRFstarIV GSD4e GSD4e SiRFStarIV SiRFLive User Manual sirf iv CS129435-MA-1 IT430 SiRFstar V sirfstar 3
Text: REV 1.6 TECHNICAL DESCRIPTION Fastrax IT430 OEM GPS Receiver This document describes the electrical connectivity and main functionality of the Fastrax IT430 OEM GPS Receiver. September 10, 2010 Fastrax Ltd. 2010-09-10 Page 2 of 43 IT430_Tech_doc.doc TRADEMARKS
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IT430
TPS79101
sirfstar IV
SiRFstarIV GSD4e
GSD4e
SiRFStarIV
SiRFLive User Manual
sirf iv
CS129435-MA-1
SiRFstar V
sirfstar 3
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PDF
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2sk725 equivalent
Abstract: 2sk725
Text: 2SK725 FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET p S E R j I E S •Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■(Applications • Sw itching regulators
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2SK725
2sk725 equivalent
2sk725
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etri converter
Abstract: schroff 11009
Text: K-Family D C -D C Converters > 1 0 0 W Rugged Environment K-Family 150 W DC-DC Converters Input to output isolation Single output: A K .E K 1000 Double output: AK.EK 2000 • Efficient input filter and built-in surge and transient ggsujsisrsssiQWieiteuiti^s
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H15/H15
98/IN
etri converter
schroff 11009
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1548-01 MR FUJI P Q W E R M O S - F E T N CHANNEL SILICON POWER MOS-FET _ - F-II SERIES • Features „ I Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage
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2SK1548-01
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68HC05C4
Abstract: 68hc11a8 DS1305 circuit
Text: D S1305 DALLAS SEMICONDUCTOR DS1305 Serial Alarm Real Time C lock RTC F EA T U R ES PIN A S S IG N M E N T • Real time clock counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year com pensation valid up to 2100
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S1305
DS1305
DS130S
68HC05C4
68hc11a8
DS1305 circuit
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