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    DIODE IT4 Search Results

    DIODE IT4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE IT4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY 1T411 Variable Capacitance Diode Description The IT-411 is a variable capacitance diode designed for analog cellular phone and It has a super miniature package. Features • Super miniature package • Small series resistance 0.40il Max. f=470MHz • Large capacitance ratio


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    1T411 IT-411 470MHz) M-235 A3fl23Ã PDF

    IC-3368

    Abstract: smd transistor 9j UPA1600GS iso 1207 PA-1600 20PIN MIL GRADE TRANSISTOR ARRAY PA1600 SMD transistor 6J U
    Text: DATA SHEET NEC FIELD EFFECT POWER TRANSISTOR i COMPOUND — ¿¿PA1600 r MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The juPA1600 is M onolithic N-channel Pow er M O S FET A rray that built CONNECTION DIAGRAM in 8 circuits and Gate Protection Diode designed for LED, Relay,


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    uPA1600 IC-3368 smd transistor 9j UPA1600GS iso 1207 PA-1600 20PIN MIL GRADE TRANSISTOR ARRAY PA1600 SMD transistor 6J U PDF

    UTI03

    Abstract: 1di480a 3A1T
    Text: 1DI48OA-O55 480a l- ; : Outline Drawings u POWER TRANSISTOR MODULE I F e a tu re s • fiSiWEE High Voltage • 7 U — sfr-f l) >9*?4 it —K A iK • Including Free W heeling Diode ASO A’i7 £ i . '• Excellent Safe.Operating Area ! • JfiStT6 Insulated Type


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    1DI48OA-O55 UTI03 1di480a 3A1T PDF

    Untitled

    Abstract: No abstract text available
    Text: G E H PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS DESCRIPTION The 4N 25 , 4N 26, 4N 27 , and 4 N 2 8 series of optocouplers ' t t H 6.86 MAX B10 w I Œ coupled to a gallium arsenide diode. _ i _ 8.89 8.38 have an NPN silicon planar phototransistor optically


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    I2-54! C1685 C1296A 74bbfl51 PDF

    7476 counter

    Abstract: 7476 counter down 7476 up down counter ci 7476 74LS CD4029BC CD4029BCN CD4029BCSJ CD4029BCWM M16B
    Text: Revised January 1999 S E M I C O N D U C T O R TM General Description All inputs are protected against static discharge by diode clamps to both V qq and Vgs- Features • Wide supply voltage range: ■ High noise immunity: 3V to 15V 0.45 VDD typ. ■ Low power TTL compatibility:


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    CD4029BC CD4029BC 7476 counter 7476 counter down 7476 up down counter ci 7476 74LS CD4029BCN CD4029BCSJ CD4029BCWM M16B PDF

    A6p DIODE

    Abstract: No abstract text available
    Text: E R C 8 - 0 4 5 A '> 3 SCHOTTKY BARRIER DIODE ’ Features • I& V f Low VF Super high speed sw itch in g . m m m & m Connection Diagram High reliability by planer design. l^ • E lS s I Applications (D High speed pow er sw itch in g . M a xim u m Ratings and Characteristics


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    500ns I95t/R89) A6p DIODE PDF

    DHM3K20

    Abstract: DIODE IT4
    Text: HIGH VOLTAGE-FAST RECOVERY DIODE DHM3K20 Unit in mm inch •ft ft ■ FEATURES • H ig h v o lta g e re c tific a tio n fo r o ffice eq u ip ­ m ent. • D iffused-junction. • E x c e lle n t h ig h te m p e ra tu re o u tp u t c h a r a c ­ te ristic s.


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    DHM3K20 DHM3K20 75kHz DIODE IT4 PDF

    DIODE IT4

    Abstract: STTA506D Diode d4 1kva STTA5 STTB506D diode id4 STTA50
    Text:  APPLICATION NOTE TURBOSWITCHΤΜ IN AN ASYNCHRONOUS MOTOR DRIVE B.Rivet The basic schematic of an asynchronous motor drive is shown in fig.1 Fig.1 : Basic schematic of an asynchronous motor drive. Va D1 T1 IT1 T2 D2 D3 T3 ID1 IL T5 T4 IT4 ID4 D4 T6 D6


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    DIODE IT4

    Abstract: STTA506D AN877 STTB506D DIODE T5 Diode d4 switching transistor
    Text: AN877 APPLICATION NOTE TURBOSWITCH IN AN ASYNCHRONOUS MOTOR DRIVE The basic schematic of an asynchronous motor drive is shown in Figure 1 Figure 1. Basic schematic of an asynchronous motor drive. Va D1 T1 IT1 T2 D2 T3 D3 ID1 IL T5 T4 IT4 ID4 D4 T6 D5 D6


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    AN877 DIODE IT4 STTA506D AN877 STTB506D DIODE T5 Diode d4 switching transistor PDF

    DIODE IT4

    Abstract: T4 DIODE 24 TRANSISTOR MAKING freewheeling diode 5A STTA506D DIODE T4 DIODE T5 fast recovery diode 600v 5A STTB506D 1kva
    Text:  APPLICATION NOTE TURBOSWITCHΤΜ IN AN ASYNCHRONOUS MOTOR DRIVE B.Rivet The basic schematic of an asynchronous motor drive is shown in fig.1 Fig.1 : Basic schematic of an asynchronous motor drive. Va D1 T1 IT1 T2 D2 D3 T3 ID1 IL T5 T4 IT4 ID4 D4 T6 D6


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    2Sk176 HITACHI

    Abstract: 2SK176 2SK1760 HITACHI 2Sk176 HITACHI 2SK* TO-3
    Text: 2SK1760 4 iH b 2 D 5 DD13014 510 «H IT4 H IT AC HI/ OPTOEL ECT RONICS) blE D SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQ U EN CY POWER AMPLIFIER • FEATURES • High Speed Switching. • High Cutoff Frequency. • Enhancement-Mode.


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    2SK1760) DD13014 -2SK176< 2Sk176 HITACHI 2SK176 2SK1760 HITACHI 2Sk176 HITACHI 2SK* TO-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1663 International IOR Rectifier IR F R /U 9310 PRELIMINARY HEXFET Power MOSFET • • • • • • P-Channel Surface Mount IRFR9310 Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated Voss = -400V R D S (on) = 7 .0 Q


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    IRFR9310) IRFU9310) -400V O-251AA 0D26B20 PDF

    Untitled

    Abstract: No abstract text available
    Text: National Semiconductor" June 1996 NDS8433 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


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    NDS8433 PDF

    2SK557

    Abstract: 12A 250v 314 hitachi ha-1 IT 314 2SK55 2SK556 A111-1 IT314 Hitachi Scans-001 ISV10
    Text: bl E D 44*^205 0013DS1 Ü74 IHIT4 2SK556,2SK557 H IT A C H I/C O P T O E L E C T R O N IC S » S IL IC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance. • High Speed Switching. • Low Drive Current. • No Secondary Breakdown.


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    00130S1 2SK556 2SK557 2SK556, 2SK557 12A 250v 314 hitachi ha-1 IT 314 2SK55 A111-1 IT314 Hitachi Scans-001 ISV10 PDF

    2SK511

    Abstract: 296 mos fet ED44
    Text: bl E D 44<ìb2DS DG13073 OST « H I T 4 2SK511 H I T A C H I / OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING HIGH FREQUENCY POWER AMPLIFIER i n • FEATURES • Superior High Frequency Characteristics. • Low Input and Output Capacitance.


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    DG13073 2SK511 0D13G75 2SK511 296 mos fet ED44 PDF

    CQ 419

    Abstract: oms 450 ifr mosfet 2SK2165-01 SC-65 2SK2165
    Text: 2SK2165-01 FUJI PO W ER M O S-F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features Outline Drawings • Hiiih current • Low on-resistance • No secondary breakdown • Low driving power • Hicjh forward Transconductance • Avalanche-proof


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    2SK2165-01 SC-65 CQ 419 oms 450 ifr mosfet 2SK2165-01 SC-65 2SK2165 PDF

    transistor c1718

    Abstract: No abstract text available
    Text: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS 4N32 4N33 PACKAGE DIMENSIONS DESCRIPTION The 4N32 and 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. FEATURES & APPLICATIONS High isolation resistance— 101,ft


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    E90700 ST1603A 74bbfiSl C1686 C1894 C1717 C1718 C1719 74bbfl51 74bbfi51 transistor c1718 PDF

    bsr melcher

    Abstract: BSR 2024-7
    Text: SR-Fomily D C - D C Converters < 4 0 W Industrial Environment SR-Family 20 W DC-DC Converters Single output of 5 ,1 2 ,1 5 or 24 V DC Input voltage up to 180 V DC • Full input to output isolation 2.5 kVrms i^ixEffici&ntiinp^ • Continuous no-load and short circuit proof


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    97/IN bsr melcher BSR 2024-7 PDF

    IN5711

    Abstract: subtleties settling time TELEDYNE PHILBRICK multiplier 2N4260 Avtech unfaithful AD835 nanosecond pulse generator an128f TELEDYNE PHILBRICK converter
    Text: Application Note 128 June 2010 2 Nanosecond, .1% Resolution Settling Time Measurement for Wideband Amplifiers Quantifying Quick Quiescence Jim Williams INTRODUCTION Instrumentation, waveform synthesis, data acquisition, feedback control systems and other application areas utilize wideband amplifiers. Current generation components


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    HP1105/1106/8A. 50mV/DIV 200ps/DIV AN128 an128f AN128-23 AN128-24 IN5711 subtleties settling time TELEDYNE PHILBRICK multiplier 2N4260 Avtech unfaithful AD835 nanosecond pulse generator an128f TELEDYNE PHILBRICK converter PDF

    sirfstar IV

    Abstract: SiRFstarIV GSD4e GSD4e SiRFStarIV SiRFLive User Manual sirf iv CS129435-MA-1 IT430 SiRFstar V sirfstar 3
    Text: REV 1.6 TECHNICAL DESCRIPTION Fastrax IT430 OEM GPS Receiver This document describes the electrical connectivity and main functionality of the Fastrax IT430 OEM GPS Receiver. September 10, 2010 Fastrax Ltd. 2010-09-10 Page 2 of 43 IT430_Tech_doc.doc TRADEMARKS


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    IT430 TPS79101 sirfstar IV SiRFstarIV GSD4e GSD4e SiRFStarIV SiRFLive User Manual sirf iv CS129435-MA-1 SiRFstar V sirfstar 3 PDF

    2sk725 equivalent

    Abstract: 2sk725
    Text: 2SK725 FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET p S E R j I E S •Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■(Applications • Sw itching regulators


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    2SK725 2sk725 equivalent 2sk725 PDF

    etri converter

    Abstract: schroff 11009
    Text: K-Family D C -D C Converters > 1 0 0 W Rugged Environment K-Family 150 W DC-DC Converters Input to output isolation Single output: A K .E K 1000 Double output: AK.EK 2000 • Efficient input filter and built-in surge and transient ggsujsisrsssiQWieiteuiti^s


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    H15/H15 98/IN etri converter schroff 11009 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1548-01 MR FUJI P Q W E R M O S - F E T N CHANNEL SILICON POWER MOS-FET _ - F-II SERIES • Features „ I Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage


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    2SK1548-01 PDF

    68HC05C4

    Abstract: 68hc11a8 DS1305 circuit
    Text: D S1305 DALLAS SEMICONDUCTOR DS1305 Serial Alarm Real Time C lock RTC F EA T U R ES PIN A S S IG N M E N T • Real time clock counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year com pensation valid up to 2100


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    S1305 DS1305 DS130S 68HC05C4 68hc11a8 DS1305 circuit PDF