IN5711
Abstract: in5711 equivalent
Text: BL GALAXY ELECTRICAL IN5711 VOLTAGE RANGE: 60 CURRENT: 400 mW SMALL SIGNAL SCHOTTKY DIODES FEATURES DO - 35 GLASS For general purpos e applications Metal s ilicon s chottky barrier device which is protected by a PN junction guard ring. The low forward voltage
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IN5711
DO--35
IN5711
in5711 equivalent
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IN5711
Abstract: AD8641 AD8642 AD8643 AD8663 AD8667 AD8669 AD8682 ADA4062 ADA4062-2
Text: Low Power JFET-Input Op Amps ADA4062-2/ADA4062-4 PIN CONFIGURATIONS Low input bias current: 50 pA maximum Offset voltage 1.5 mV maximum for B grade ADA4062-2 SOIC package 2.5 mV maximum for A grade Offset voltage drift: 5 V/°C typical Slew rate: 3.3 V/μs typical
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ADA4062-2/ADA4062-4
ADA4062-2
10-lead
14-lead
16-lead
ADA4062-2
IN5711
AD8641
AD8642
AD8643
AD8663
AD8667
AD8669
AD8682
ADA4062
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DAC10
Abstract: DAC10FX DAC10BX
Text: a 10-Bit High Speed Multiplying D/A Converter Universal Digital Logic Interface DAC10* All DAC10 series models guarantee full 10-bit monotonicity, and nonlinearities as tight as +0.05% over the entire operating temperature range are available. Device performance is essentially unchanged over the ± 18 V power supply range, with
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10-Bit
DAC10*
DAC10
e10-Bit
DAC10BX
DAC10BX/883C
DAC10FX
DAC10GP
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DAC10FX
Abstract: C3134 in5711 equivalent DAC10
Text: DAC10–SPECIFICATIONS ELECTRICAL CHARACTERISTICS Parameter Symbol @ VS = ؎15 V; IREF = 2 mA; 0؇C ≤ TA ≤ +70؇C for DAC10F and G, unless otherwise noted. Output characteristics apply to both IOUT and IOUT. Conditions Min MONOTONICITY DAC10F Typ Max
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DAC10
18-Lead
C3134
DAC10FX
in5711 equivalent
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MMD0840
Abstract: fs r6a CIRCUIT DIAGRAM IN5711 vishay LIMITING INRUSH CURRENT mosfet LTC6910-1 coiltronics ctx02-13664 MMD-0840 CTX02-13664 LTC3439 mmd series mosfets
Text: LINEAR TECHNOLOGY VOLUME XII NUMBER 4 DECEMBER 2002 COVER ARTICLE Ideal Diode Controller Eliminates Energy Wasting Diodes in Power OR-ing Applications . 1 David Laude Issue Highlights . 2 LTC in the News . 2
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400MHz
OT-23
S-191
MMD0840
fs r6a CIRCUIT DIAGRAM
IN5711 vishay
LIMITING INRUSH CURRENT mosfet
LTC6910-1
coiltronics ctx02-13664
MMD-0840
CTX02-13664
LTC3439
mmd series mosfets
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cb142
Abstract: No abstract text available
Text: Dual/Quad, Low Power, High Speed JFET Operational Amplifiers OP282/OP482 Active filters Fast amplifiers Integrators Supply current monitoring GENERAL DESCRIPTION The OP282/OP482 dual and quad operational amplifiers feature excellent speed at exceptionally low supply currents. The slew
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OP282/OP482
OP282/OP482
14-Ball
14-Lead
cb142
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IN5711
Abstract: OP282G OP282 OP482 OP-482 OP282GS
Text: Dual/Quad Low Power, High Speed JFET Operational Amplifiers OP282/OP482 PIN CONNECTIONS 1 8 V+ –IN A 2 7 OUT B +IN A 3 6 –IN B V– 4 5 +IN B GENERAL DESCRIPTION The OP282/OP482 dual and quad operational amplifiers feature excellent speed at exceptionally low supply currents. The slew
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OP282/OP482
OP282/OP482
14-Lead
IN5711
OP282G
OP282
OP482
OP-482
OP282GS
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BD10
Abstract: BD12 BD13 PB10 PB12
Text: SECTION 10 PORT B Port B is a dual-purpose I/O port that can be used as 1 15 general-purpose pins individually configurable as either inputs or outputs or as 2) an 8-bit bidirectional host interface HI) (see Figure 10-1). When configured as general-purpose I/O, port B can be used for
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DSP56000/DSP56001
BD10
BD12
BD13
PB10
PB12
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IN5711
Abstract: in5711 equivalent JESD51-9 OP282 OP482 OP-482 OP482A OP282GSZ-REEL7
Text: Dual/Quad, Low Power, High Speed JFET Operational Amplifiers OP282/OP482 Active filters Fast amplifiers Integrators Supply current monitoring GENERAL DESCRIPTION The OP282/OP482 dual and quad operational amplifiers feature excellent speed at exceptionally low supply currents. The slew
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OP282/OP482
OP282/OP482
14-Ball
14-Lead
IN5711
in5711 equivalent
JESD51-9
OP282
OP482
OP-482
OP482A
OP282GSZ-REEL7
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gold metal detectors
Abstract: IN5711 in5711 equivalent diode ring mixer PN Junction Diode oscillator Metal Detector doppler radar p-n junction diode digital metal detector Silicon Point Contact Mixer Diodes
Text: Schottky Barrier Diodes Characteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear diode is similar to point contact diodes and p-n junction diodes. The
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AN988,
26/IB
gold metal detectors
IN5711
in5711 equivalent
diode ring mixer
PN Junction Diode oscillator
Metal Detector
doppler radar
p-n junction diode
digital metal detector
Silicon Point Contact Mixer Diodes
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dac10
Abstract: DAC10FX 2n918 die dac10bx
Text: a 10-Bit High Speed Multiplying D/A Converter Universal Digital Logic Interface DAC10* All DAC10 series models guarantee full 10-bit monotonicity, and nonlinearities as tight as +0.05% over the entire operating temperature range are available. Device performance is essentially unchanged over the ± 18 V power supply range, with
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10-Bit
DAC10*
DAC10
DAC10FX
2n918 die
dac10bx
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IN5711
Abstract: AD8682 AD8684 DAC8408 RU-14
Text: Dual/Quad Low Power, High Speed JFET Operational Amplifiers AD8682/AD8684 APPLICATIONS Portable telecommunications Low power industrial and instrumentation Loop filters Active and precision filters Integrators Strain gauge amplifiers Portable medical instrumentation
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AD8682/AD8684
AD8682
14-Lead
RU-14
IN5711
AD8682
AD8684
DAC8408
RU-14
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Untitled
Abstract: No abstract text available
Text: DAC10–SPECIFICATIONS ELECTRICAL CHARACTERISTICS Parameter Symbol @ VS = ؎15 V; IREF = 2 mA; 0؇C ≤ TA ≤ +70؇C for DAC10F and G, unless otherwise noted. Output characteristics apply to both IOUT and IOUT. Conditions Min MONOTONICITY DAC10F Typ Max
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DAC10â
DAC10F
DAC10F
DAC10G
18-Lead
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IFR 740
Abstract: IN5711 DAC10 DAC10FX DAC10GP DAC10GS DAC10GX 2N918s MA231
Text: a 10-Bit High Speed Multiplying D/A Converter Universal Digital Logic Interface DAC10* All DAC10 series models guarantee full 10-bit monotonicity, and nonlinearities as tight as +0.05% over the entire operating temperature range are available. Device performance is essentially unchanged over the ± 18 V power supply range, with
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10-Bit
DAC10*
DAC10
18-Lead
IFR 740
IN5711
DAC10FX
DAC10GP
DAC10GS
DAC10GX
2N918s
MA231
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cb142
Abstract: No abstract text available
Text: Dual/Quad, Low Power, High Speed JFET Operational Amplifiers OP282/OP482 Data Sheet PIN CONNECTIONS APPLICATIONS OUT A 1 8 V+ –IN A 2 7 OUT B +IN A 3 V– 4 OP282 OP-482 –IN B 5 +IN B Figure 1. 8-Lead, Narrow-Body SOIC S-Suffix [R-8] OUT A 1 –IN A 2
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OP282/OP482
OP282
OP-482
14-Ball
14-Lead
cb142
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OP297
Abstract: instrumentation amplifier circuit AD820 AD822 AD824 AD8682 AD8684 ADA4062-2 OP282 OP482
Text: Tiny, Low Power JFET-Input Op Amp ADA4062-2 PIN CONFIGURATIONS Low input bias current: 50 pA maximum Offset voltage 1.5 mV maximum for ADA4062-2 B grade 2.5 mV maximum for ADA4062-2 A grade Offset voltage drift: 4 V/°C typical Slew rate: 3.3 V/μs typical
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ADA4062-2
ADA4062-2
MSO062-2ARZ-RL1
ADA4062-2BRZ1
ADA4062-2BRZ-R71
ADA4062-2BRZ-RL1
OP297
instrumentation amplifier circuit
AD820
AD822
AD824
AD8682
AD8684
OP282
OP482
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in5711 equivalent
Abstract: IN5711 LT1210 as buffer MMD0840 cascode FDN306 LT1210 Design note simple inverter LT1210 DUAL LT1819
Text: DESIGN FEATURES 2500V/µs Slew Rate Op Amps Process Large Signals with Low Distortion at High Frequencies by Kris Lokere and Glen Brisebois Introduction The LT1818 and LT1819 are low distortion single and dual operational amplifiers that offer 400MHz gain
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LT1818
LT1819
400MHz
85dBc
LTC4412
FDN306P
in5711 equivalent
IN5711
LT1210 as buffer
MMD0840
cascode
FDN306
LT1210 Design note
simple inverter
LT1210 DUAL
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Untitled
Abstract: No abstract text available
Text: Low Power JFET-Input Op Amps ADA4062-2/ADA4062-4 Low input bias current: 50 pA maximum Offset voltage 1.5 mV maximum for B grade ADA4062-2 SOIC package 2.5 mV maximum for A grade Offset voltage drift: 5 µV/°C typical Slew rate: 3.3 V/µs typical CMRR: 90 dB typical
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ADA4062-2/ADA4062-4
ADA4062-2
10-lead
14-lead
16-lead
ADA4062-2
ADA40625Â
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AN7530
Abstract: LM393 Spice COILTRONICS CTX01 ccfl transformer CTX01 12926 LM393 spice model IN5711 npn-pnp dual laptop lcd ccfl inverter Royer converter Royer oscillator circuit diagram
Text: Application Note 75 March 1999 Circuitry for Signal Conditioning and Power Conversion Designs From a Once Lazy Sabbatical Jim Williams Introduction Linear Technology has a sabbatical program. Every five years employees are granted sabbatical leave, which may
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EL2004
400pA
50MHz
50MHz
AN75-31
AN75-32
an75f
AN7530
LM393 Spice
COILTRONICS CTX01 ccfl transformer
CTX01 12926
LM393 spice model
IN5711
npn-pnp dual
laptop lcd ccfl inverter
Royer converter
Royer oscillator circuit diagram
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IN5711
Abstract: BD10 BD12 BD13 PB10 PB12 mc6801-type DSP560000 dsp56001 ADI1290
Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. SECTION 10 PORT B Port B is a dual-purpose I/O port that can be used as 1 15 general-purpose pins individually configurable as either inputs or outputs or as 2) an 8-bit bidirectional host interface
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DSP56000/DSP56001
IN5711
BD10
BD12
BD13
PB10
PB12
mc6801-type
DSP560000
dsp56001
ADI1290
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a25 msop
Abstract: ADA4062-4 AD820 AD822 AD8682 ADA4062 ADA4062-2 OP282 OP297 OP482
Text: Low Power JFET-Input Op Amps ADA4062-2/ADA4062-4 PIN CONFIGURATIONS Low input bias current: 50 pA maximum Offset voltage 1.5 mV maximum for B grade ADA4062-2 SOIC package 2.5 mV maximum for A grade Offset voltage drift: 4 V/°C typical Slew rate: 3.3 V/μs typical
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ADA4062-2/ADA4062-4
ADA4062-2
10-lead
14-lead
ADA4062-2
a25 msop
ADA4062-4
AD820
AD822
AD8682
ADA4062
OP282
OP297
OP482
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IN5711
Abstract: subtleties settling time TELEDYNE PHILBRICK multiplier 2N4260 Avtech unfaithful AD835 nanosecond pulse generator an128f TELEDYNE PHILBRICK converter
Text: Application Note 128 June 2010 2 Nanosecond, .1% Resolution Settling Time Measurement for Wideband Amplifiers Quantifying Quick Quiescence Jim Williams INTRODUCTION Instrumentation, waveform synthesis, data acquisition, feedback control systems and other application areas utilize wideband amplifiers. Current generation components
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HP1105/1106/8A.
50mV/DIV
200ps/DIV
AN128
an128f
AN128-23
AN128-24
IN5711
subtleties settling time
TELEDYNE PHILBRICK multiplier
2N4260
Avtech
unfaithful
AD835
nanosecond pulse generator
an128f
TELEDYNE PHILBRICK converter
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IN5711
Abstract: melf Schottky glass jan In5711 SCHOTTKY DIODE SOD-80 JANTX
Text: SCHOTTKY BARRIER DIODES metelics FOR GENERAL PURPOSE APPLICATIONS CORPORATION FEATURES • High Breakdown Voltage to 70 Volts • Available in Chips, Glass Package Or Double Slug Melf Package • 1N5711 Available in JAN, JANTX and JANTXV • Packages Metallurgical^ Bonded
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1N5711
CD5711
CD5712
CD2810
DSB5712
DSB2810
CDLL5711
CDLL5712
CDLL2810
IN5711
melf Schottky glass
jan In5711
SCHOTTKY DIODE SOD-80 JANTX
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IN5711
Abstract: Silicon Point Contact Mixer Diodes Microwave zero bias detector diodes
Text: W O ñ H EW LETT' 1"KM PACKARD Schottky Barrier Diodes C haracteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear diode is similar to point contact diodes
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OCR Scan
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AN988,
26/Th
IN5711
Silicon Point Contact Mixer Diodes
Microwave zero bias detector diodes
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