zener diode 4.7V
Abstract: marking h2 SOD-323 ZENER Zener Diode SOD-323 marking code 2b marking 2h SOD-323 ZENER A25 ZENER DIODE E1 sod323 diode marking code 2E zener diode 4.7V current rating diode F4 8a marking code 8A
Text: Surface Mount Zener Diode MMSZ52XXBS Series A suffix of "-C" specifies halogen-free 200mW, SOD-323 Electrical Characteristics @ T A=25 C unless otherwise specified Zener Voltage Range Note 1 Type Number Marking Code Nom V 2.4 2.5 2.7 3.0 3.3 3.6 3.9 4.3
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MMSZ52XXBS
200mW,
OD-323
150OC
01-Jun-2002
zener diode 4.7V
marking h2 SOD-323 ZENER
Zener Diode SOD-323 marking code 2b
marking 2h SOD-323
ZENER A25
ZENER DIODE E1
sod323 diode marking code 2E
zener diode 4.7V current rating
diode F4 8a
marking code 8A
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Mosfet
Abstract: SSF2122E
Text: SSF2122E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 15.2mohm(typ.) ID 7A ① DFN 3x3-8L Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and
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SSF2122E
2122E
3000pcs
12000pcs
48000pcs
Mosfet
SSF2122E
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diode TA 20-08
Abstract: P-channel Trench MOSFET MOSFET with Schottky Diode schottky diode 100A DIODE marking 8L MOSFET 20V 100A Bi-Directional P-Channel mosfet
Text: SPC4703 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC4703combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an DFN3X2-8L package. The Trench MOSFET is the P-Channel enhancement mode power
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SPC4703
SPC4703combines
-20V/-3
diode TA 20-08
P-channel Trench MOSFET
MOSFET with Schottky Diode
schottky diode 100A
DIODE marking 8L
MOSFET 20V 100A
Bi-Directional P-Channel mosfet
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Mosfet
Abstract: No abstract text available
Text: SSF3056C 30V Complementary MOSFET Preliminary Main Product Characteristics NMOS PMOS D1 S1 NMOS VDSS 30V -30V D1 G1 D2 S2 PMOS RDS(on) 37mohm(typ.) 68mohm(typ.) ID 5A D2 G2 -4.5A Schematic Diagram DFN2X3-8L Features and Benefits Advanced trench MOSFET process technology
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SSF3056C
37mohm
68mohm
3056C
3000pcs
10pcs
30000pcs
120000pcs
Mosfet
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD MISWB3x2-8L Power management Dual-transistors CJ5853DDC P-channel MOSFET and Schottky Diode MISWB3×2-8L P0.65T0.75 FEATURES • Featuring a MOSFET and Schottky Diode • Independent Pinout to each Device to Ease Circuit Design
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CJ5853DDC
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Analog devices marking Information
Abstract: AECQ100 BAS52 8l marking PR001 analog devices marking
Text: Integrated Precision Battery Sensor for Automotive System ADuC7032-8L Silicon Anomaly This anomaly list describes the known bugs, anomalies, and workarounds for the ADuC7032-8L integrated precision battery sensor. The anomalies listed apply to all ADuC7032-8L packaged material branded as follows:
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ADuC7032-8L
ADuC7032-8L
ADuC7032
BSTZ96
er001
er002
Analog devices marking Information
AECQ100
BAS52
8l marking
PR001
analog devices marking
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WS2.8-8LVU
Abstract: ipc-SM-782 27BSC Wayon RJ45 LAN ESD
Text: Document: W0301005, Rev: C WS2.8-8LVU Transient Voltage Suppressor Features z 600 Watts peak pulse power tp=8/20 s z Protects Four Line Pairs (Eight lines) z Low capacitance z Low leakage current z Low operating and clamping voltage z Solid-state Punch through Avalanche TVS process technology
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W0301005,
8/20s)
EN61000-4)
5/50ns)
ipc-sm-782a.
05BSC
WS2.8-8LVU
ipc-SM-782
27BSC
Wayon
RJ45 LAN ESD
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Analog devices marking Information
Abstract: "Analog devices" marking Information DIODE marking 8L analog devices marking AECQ100 BAS52 8l marking
Text: Integrated Precision Battery Sensor for Automotive System ADuC7032-8L Silicon Anomaly List This anomaly list describes the known bugs, anomalies, and workarounds for the ADuC7032-8L integrated precision battery sensor. The anomalies listed apply to all ADuC7032-8L packaged material branded as follows:
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ADuC7032-8L
ADuC7032-8L
ADuC7032
BSTZ96
BAS52,
er001
Analog devices marking Information
"Analog devices" marking Information
DIODE marking 8L
analog devices marking
AECQ100
BAS52
8l marking
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Untitled
Abstract: No abstract text available
Text: MMBD2837/8LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA MONOLITHIC DUAL SWITCHING DIODE Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Rating Characteristic Symbol 2837 2838 Unit Reverse Voltage VR 35 50 Vdc Peak Reverse Voltage
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MMBD2837/8LT1
OT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD MISWB3x2-8L Power Management MOSFETS-Schottky CJ5853DDC P-channel MOSFET and Schottky Barrier Diode MISWB3×2-8L P0.65T0.75 FEATURES • Featuring a MOSFET and Schottky Diode • Independent Pinout to Each Device to Ease Circuit Design
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CJ5853DDC
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Mosfet
Abstract: SSF3036C
Text: SSF3036C 30V Complementary MOSFET Main Product Characteristics NMOS PMOS VDSS 30V -30V RDS on 32.4mohm 61.6mohm ID 4A -3.6A N-Channel Mosfet P-Channel Mosfet Schematic Diagram DFN 3x2-8L Bottom View Features and Benefits Advanced Process Technology
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SSF3036C
3036C
3000pcs
10pcs
30000pcs
120000pcs
Mosfet
SSF3036C
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mosfet 2g2
Abstract: H9926CTS H9926TS mark 6A N-channel code TS
Text: HI-SINCERITY Spec. No. : MOS200513 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9926TS / H9926CTS Dual N-Channel Enhancement-Mode MOSFET 20V, 6A 8-Lead Plastic TSSOP-8L Package Code: TS H9926TS Symbol & Pin Assignment
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MOS200513
H9926TS
H9926CTS
V-10V)
H9926CTS
183oC
217oC
260oC
245oC
mosfet 2g2
mark 6A N-channel
code TS
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD MISWB3x2-8L Power Management MOSFETs-Schottky CJ5853DDC P-channel MOSFET and Schottky Barrier Diode MISWB3×2-8L FEATURES z Independent Pinout to Each Device to Ease Circuit Design z Ultra low VF z Including a CJ2301 MOSFET and a MBR0520 Schottky
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CJ5853DDC
CJ2301
MBR0520
CJ5853DDC
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Untitled
Abstract: No abstract text available
Text: Integrated Precision Battery Sensor for Automotive System ADuC7032-8L Silicon Anomaly This anomaly list describes the known bugs, anomalies, and workarounds for the ADuC7032-8L/ADuC7032-88 integrated precision battery sensor. The anomalies listed apply to all ADuC7032-8L/ADuC7032-88 packaged material branded as follows:
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ADuC7032-8L
ADuC7032-8L/ADuC7032-88
ADuC7032
BSTZ-88
ADuC7032-8L
IdentifS52,
er001
er002
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W1646
Abstract: MSOP-8L diode code yw
Text: Specification for release Customer : Ordercode: Description: Package: 82401646 TVS Diode Array WE-TVS MSOP-8L DATUM / DATE : 2010-09-24 A Features B Schematic and Pin Configuration: • ESD Protection for Super Speed Differential Signaling above 5Gb/s channels like USB 3.0
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UL94V-0
D-74638
W1646
MSOP-8L
diode code yw
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H8205A
Abstract: *8205a H-8205A
Text: HI-SINCERITY Spec. No. : MOS200905 Issued Date : 2009.02.27 Revised Date : 2010.06.30 Page No. : 1/4 MICROELECTRONICS CORP. H8205A Dual N-Channel Enhancement-Mode MOSFET 20V, 6A 8-Lead Plastic TSSOP-8L Package Code: TS H8205A Symbol & Pin Assignment Description
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MOS200905
H8205A
H8205A
V-10V)
200oC
217oC
260oC
245oC
*8205a
H-8205A
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Untitled
Abstract: No abstract text available
Text: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21
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SiJ484DP
2002/95/EC
SiJ484DP-T1-GE3
18-Jul-08
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4810 mosfet
Abstract: No abstract text available
Text: New Product SiJ458DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0022 at VGS = 10 V 60 0.0026 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 40.6 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21
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SiJ458DP
2002/95/EC
SiJ458DP-T1-GE3
18-Jul-08
4810 mosfet
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Untitled
Abstract: No abstract text available
Text: New Product SiJ420DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0026 at VGS = 10 V 50 0.0032 at VGS = 4.5 V 50 VDS (V) 20 Qg (Typ.) 28.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21
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SiJ420DP
2002/95/EC
SiJ420DP-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: New Product SiJ400DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.004 at VGS = 10 V 32 0.005 at VGS = 4.5 V 32 VDS (V) 30 Qg (Typ.) 45 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21
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SiJ400DP
2002/95/EC
SiJ400DP-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: AP1601 Step-Up DC/DC Converter Features General Description -A Guaranteed Start-Up from less than 0.9 V. -High Efficiency. -Low Quiescent Current. -Less Number of External Components needed. -Low Ripple and Low Noise. -Space Saving Packages: MSOP-8L and
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AP1601
MSOP-10L.
AP1601
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marking A7s
Abstract: siemens em 350 99 DIODE marking 351
Text: SIEMENS Silicon Switching Diode Array BAV 99 Features • For high-speed switching • Connected in series Type Marking Ordering Code tape and reel BAV 99 A7s Q68000-A549 Pin Configuration Package1) SOT-23 3 ¿— EH I IX ° P U 07005 Maximum Ratings per Diode
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OCR Scan
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PDF
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Q68000-A549
OT-23
BAV99
M0076
marking A7s
siemens em 350 99
DIODE marking 351
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Diode LT 02
Abstract: ERB83-006 T460 T760 T930
Text: ERB83-006 2A : Outline D raw ings SCHOTTKY BARRIER DIODE : Features • vF : Marking Low VF Ä7-3-K : £R Super high speed switching. Color code : •SÄJfcS High reliability by planer design Abridged type name Voltage cioss Oy rnq : Applications Lot No.
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OCR Scan
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PDF
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ERB83-006
I95t/R89
Shl50
Diode LT 02
T460
T760
T930
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marking 2U 77 diode
Abstract: marking DIODE 2U 04 marking code IAM 12CT ERC84-009 diode marking code 7-7-7-7 marking 2U diode marking DIODE 2U
Text: ERC84-009I3A K • fl- B '+ ii : Outline Drawings SCHOTTKY BARRIER DIODE Features • 1&VF Low VF W$z7j\ : Marking Ä 7 “- 3 - K : f f Color code : Blue Super high speed switching. • 7 V - * - f t « C J&ftflH Ktt High reliability by planer design. Abridged type nam e'"'" Î 1
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OCR Scan
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ERC84-009
marking 2U 77 diode
marking DIODE 2U 04
marking code IAM
12CT
diode marking code 7-7-7-7
marking 2U diode
marking DIODE 2U
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