marking code diode 04
Abstract: Low Forward Voltage Diode marking code MS SOT Reverse voltage diode Schottky diode low voltage schottky marking code PD sot-23 marking code 1SS392
Text: 1SS392 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features • Low forward voltage • Low reverse current 1 2 Marking Code: "ZD" SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol
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1SS392
OT-23
marking code diode 04
Low Forward Voltage Diode
marking code MS SOT
Reverse voltage diode
Schottky diode low voltage
schottky marking code PD
sot-23 marking code
1SS392
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J555
Abstract: J554 J553 J556 diode j555 DIODE DATABOOK J557 nj16 current regulator diode j555 diode
Text: Databook.fxp 1/19/99 12:10 PM Page C-6 C-6 01/99 J553, J554, J555, J556, J557 Current Regulator Diode Absolute maximum ratings at TA = 25¡C. ¥ Current Regulation ¥ Current Limiting ¥ Biasing Peak Operating Voltage Continuous Reverse Gate Current Continuous Device Power Dissipation
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UZD225
Abstract: for triangulation sensor zener diode 531 1969inch capacitive level sensor circuit drawing M1021 UZD821 UZD822 UZD823 UZD824
Text: UZD22,225 series 0.6.10 12:08 Page 1 DIE-CAST HOUSING TRIGONOMETRIC AREA REFLECTIVE PHOTOELECTRIC SENSORS UZD22 UZD225 HIGH IMMUNITY TO TARGET COLOR CHANGES WITH DIE-CAST BODY Not Affected Background Object The sensor does not detect background objects. It employs a triangulation
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UZD22
UZD22
UZD225
UZD824
UZD825
UZD831
M416mm
UZD225
for triangulation sensor
zener diode 531
1969inch
capacitive level sensor circuit drawing
M1021
UZD821
UZD822
UZD823
UZD824
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sm25 diode
Abstract: No abstract text available
Text: WESTCODE An Date:- 12 Jul, 2004 Data Sheet Issue:- 1 IXYS Company Fast Recovery Diode Type M2698Z#250 to M2698Z#350 Old Type No.: SM25-36CXC964 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 2500-3500
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M2698Z
SM25-36CXC964
sm25 diode
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M2698ZC
Abstract: M2698Z M2698
Text: WESTCODE An Date:- 12 Jul, 2004 Data Sheet Issue:- 1 IXYS Company Fast Recovery Diode Type M2698Z#250 to M2698Z#350 Old Type No.: SM25-36CXC964 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 2500-3500
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M2698Z
SM25-36CXC964
M2698ZC
M2698
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equivalent transistor LM317T
Abstract: schematic diagram lm317t 6v BATTERY CHARGING CIRCUIT lm317 IC LM317T lm317 equivalent data sheet ic lm317t cost of LM317t LM317T battery charger Regulated Power Supply Schematic Diagram lm317 LM317T
Text: ICS1735EB ICS1735 Evaluation Board General Description Table 1 Cells 3 6 12 Galaxy Power, Inc.'s ICS1735 Evaluation Board helps provide a practical way of evaluating the ICS1735 conditioning/charge method on lead acid batteries. The evaluation board provides
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ICS1735EB
ICS1735
2N3903
047uF
100pF
LM340
AN7805
equivalent transistor LM317T
schematic diagram lm317t
6v BATTERY CHARGING CIRCUIT lm317
IC LM317T
lm317 equivalent
data sheet ic lm317t
cost of LM317t
LM317T battery charger
Regulated Power Supply Schematic Diagram lm317
LM317T
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diode sy 715
Abstract: No abstract text available
Text: SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR ZDX3F ZDX4F ISSUE 2 -MARCH 94 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Repetitive Peak R everse Voltage V RRM Average Rectified Forw ard Current Non-Repetitive Peak Forw ard Current t=1ns ZD X 3F
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cH7Q57Ã
001G35S
diode sy 715
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DAF96
Abstract: No abstract text available
Text: M A ZD A b elvu Q ^p diode pentode Détecteur - Amplificateur A.P. C A R A C T E R IS T IQ U E S G E N E R A L E S Chauffage direct Alimentation du filament en série ou en parallèle Vf If Ampoule .
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M74HCXXXX
Abstract: 74HC40103
Text: 5bE D r z j ^ 7 # » S • 712=1237 0 0 4 Q 4 6 0 QSb ■ S G T H S C S -T H O M S O N M 5 4 /7 4 H C 4 0 1 0 2 II8 S 0 iy ig iia a iB B E i M 5 4 /7 4 H C 4 0 1 0 3 G S-THOMSON T - cf S ’- 2 3- ¡Y 8 STAGE PRESETTABLE SYNCHRONOUS DOWN COUNTERS ■ HIGH SPEED
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40102B/40103B
M54/74HC40102/40103
M54/74HC40102/40103
7TET237
M74HCXXXX
74HC40103
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VM716N8
Abstract: No abstract text available
Text: ^ ^ V T C In c. Value the CustomerTU FEATURES • High Performance - Read Gain = 200 - 300 V/V Typical - Input Noise = 0.65nV/VHz max - Head Inductance Range = 0 .2 -5 pH 0.5 pH typical - Write Current Range 5 - 35 mA - Low Input Capacitance = 12 pF typical
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VM7160
65nV/VHz
VM7162
VM7164
VM7168
100mV,
10MHz
VM716N8
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Untitled
Abstract: No abstract text available
Text: WESTERN DIGITAL C O R P O R A T I O N WD1943 8136 Dual Baud Rate Clock XTAL/EXT 1 d + 5V ^ 18 17 16 ZD X TAL/EXT ZD TT ZD T a fR 3 r A 4 15 = 3 Tb r B 5 14 RC 6 13 r d CU 7 12 STR 8 NC 9 11 10 ZD TC ZD TO ZD STT ZD G ND ZD F/4 • OPERATES WITH CRYSTAL OSCILLATOR OR EX
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WD1943
BR1941
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Untitled
Abstract: No abstract text available
Text: A • R W .\A A P T 12 0 1 R 5 B V R dvanced pow er Te c h n o l o g y “ 1200V io a 1.500Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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O-247
APT1201R5BVR
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Untitled
Abstract: No abstract text available
Text: A • R W .\A A P T 12 0 1 R 6 B V R dvanced pow er Te c h n o l o g y “ 8a 1200V 1.600Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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O-247
APT1201R6BVR
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QM75DY-24
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM75DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM7 5 DY-2 4 • Ic • V c ex • hFE Collector current. 75A Collector-emitter voltage. 1200V DC current gain. 75
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QM75DY-24
E80276
E80271
QM75DY-24
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WT 7520
Abstract: diode lt 8220 SAC 1630 L saa 1070 tic125 tsumu T920 thyristor GE 1780 scr 3f scr thyristor power diode 1000 volt 700 amper
Text: POWER SEMICONDUCTORS IN C 1TE D • 72^14^0 D0003b4 1 ■ POS "T-Ol-01 T'-ZS-C>| D PACK THYRISTOR POWER PACK TH YR ISTO R S 28mm. <25 mm.) RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature
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T-Ol-01
-28-Unt-2A-
453/JJ5Ã
422M0
T0-94
h-755
WT 7520
diode lt 8220
SAC 1630 L
saa 1070
tic125
tsumu
T920 thyristor
GE 1780 scr
3f scr thyristor
power diode 1000 volt 700 amper
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fuse BJE 147
Abstract: fuse 9 BJE 147 SHINDENGEN TR 222 7431u ZD205 zd106 R-33 ZUP-400 mip0224 d1fl20u
Text: ZUP-400 SERIES RELIABILITY DATA DWG: JA549-79-01 Q A APPD APPD PorôK' Ptlii. CHK O c ^ /a o /q ^ ^ A DWG ^ nJ n e m ic - l a m b d a l t d . <*• s<7. /& & & INDEX 1 .MTBF; Calculated Value of MTBF R-1 2.Component Derating R -2-12 3.Main Components Temperature Rise
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ZUP-400
JA549-79-01
R-2-12
R-13-14
R-15-16
R-17-32
ZUP-400
RCR-9102)
MIL-HDBK-217F.
GENRAD-2503.
fuse BJE 147
fuse 9 BJE 147
SHINDENGEN TR 222
7431u
ZD205
zd106
R-33
mip0224
d1fl20u
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VM312
Abstract: DIODE H5y VM312-8PMJ VM3128
Text: V T C In c. V a lu e th e C u s to m e r VM312 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1992 TWO-TERMINAL READ/WRITE PR E A M PS FEATURES • High Performance: - Read mode gain = 150V/V - Low input noise = 0.8nVA/Hz maximum
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VM312
10-CHANNEL,
50V/V
200nH
32R512
34-lead
VM3129PMJ
28-Lead
VM3126SSJ
10-Channel
VM312
DIODE H5y
VM312-8PMJ
VM3128
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zd2500
Abstract: WT 7520 CS 601 thyristor TIC125 T920 thyristor power diode 1000 volt 700 amper thyristor 100 amper diode lt 8220 cs 1694 eo saa 1070
Text: POWER SEMICONDUCTORS INC 1TE D • 7 2 ^ 1 4 ^ 0 D0003b4 1 ■ POS " T -O l-0 1 T '- Z S - C > | RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature Symbol Units ' t RMS
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T-Ol-01
1001b.
254-turns
zd2500
WT 7520
CS 601 thyristor
TIC125
T920 thyristor
power diode 1000 volt 700 amper
thyristor 100 amper
diode lt 8220
cs 1694 eo
saa 1070
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DIODE H5X
Abstract: diode zd 33 DIODE H5y diode zd 12
Text: E v ie n e Y I2 J 2 E : - V M 3 1 2 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEATURES • The VM312 is a1high-perform ance, low-power, bipolar mono lithic read / write pream plifier designed for use with twoterminal thin-film recording heads. It provides write current
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10-CHANNEL,
10-Channel
44-lead
36-lead
28-Lead
DIODE H5X
diode zd 33
DIODE H5y
diode zd 12
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JEC 400
Abstract: RBV800 RBV810 diode zd 18 diode zd 12
Text: r svnSEMi ^ •w — m in c 5YMSEMI 5EMICOMDUCTOR RBV800 - RBV810 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts lo : 8.0 Amperes FEATURES: * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
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RBV800
RBV810
UL94V-0
MIL-STD-202,
JEC 400
diode zd 18
diode zd 12
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Untitled
Abstract: No abstract text available
Text: T ì M Ì mm:II m* Ä Q 91 SEMICONDUCTOR DS5001FP 128K Soft Microprocessor Chip FEATURES PIN ASSIGNMENT • 8051-compatible microprocessor adapts to its task - Accesses up to 128 kbytes of nonvolatile SRAM - In-system programming via on-chip serial port - Can modify its own program or data
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DS5001FP
8051-compatible
CRC-16
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diode zd 33
Abstract: yy12
Text: #| v v tc .„ c Value the Customer V M 333 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEATURES • High Performance: - Read mode gain = 150V/V - Low input noise = 1.1 nV/VHz maximum - Input capacitance = 20pF maximum
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10-CHANNEL,
50V/V
200nH
10OmV,
10MHz
600nH,
diode zd 33
yy12
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Untitled
Abstract: No abstract text available
Text: WÉÊ VTC Inc. Value the Customer VM7100 2, 4 O R 8-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/W RITE PR EA M PLIFIE R PRELIMINARY FEATURES D ESCRIPTIO N The VM7100 is a high-performance, very low-power read/ write preamplifier designed for use with external 2-terminal,
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VM7100
VM7100
100mV,
10MHz
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TC74HC40102
Abstract: 74HC40103
Text: TC74HC40102P TC74HC40103P TC74HC40102P DUAL BCD PROGRAMMABLE DOWN COUNTER TC74HC401Q3P 8-BIT BINARY PROGRAMMABLE DOWN COUNTER_ The TC74HC40102 and TC74HC40103 are high speed CMOS PROGRAMMABLE DOWN COUNTER fabricated with silicon gate C2MOS technology.
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TC74HC40102P
TC74HC40103P
TC74HC401Q3P
TC74HC40102
TC74HC40103
40102/40103B)
74HC40103
TC74HC40102P
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