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    Untitled

    Abstract: No abstract text available
    Text: STB33N60M2 N-channel 600 V, 0.090 Ω typ., 26 A MDmesh II Plus low Qg Power MOSFETs in a D2PAK package Datasheet - preliminary data Features TAB Order code VDS @ TJmax RDS on max ID STB33N60M2 650 V 0.120 Ω 27 A • Extremely low gate charge 3 1 • Lower RDS(on) x area vs previous generation


    Original     		PDF STB33N60M2 AM15572v1 DocID025253

    33N60

    Abstract: No abstract text available
    Text: STB33N60M2 N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus low Qg Power MOSFETs in a D2PAK package Datasheet - production data Features TAB Order code VDS @ TJmax RDS on max ID STB33N60M2 650 V 0.125 Ω 26 A • Extremely low gate charge 3 1 • Lower RDS(on) x area vs previous generation


    Original     		PDF STB33N60M2 AM15572v1 DocID025253 33N60