175AA
Abstract: d marking code dpak transistor 5- pin smd IC 775
Text: NCV4275 Advance Information 5 V Low−Drop Voltage Regulator This industry standard linear regulator has the capability to drive loads up to 450 mA at 5 V. It is available in DPAK, D2PAK, and TO−220 options. This device is pin−for−pin compatible with
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NCV4275
O-220
TLE4275.
175AA
NCV4275/D
175AA
d marking code dpak transistor
5- pin smd IC 775
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t5n50
Abstract: 5n50 5n50 mosfet NTD5N50 NTD5N50T4 351 D-PAK
Text: NTD5N50 Preferred Device Advance Information Power MOSFET 5 Amps, 500 Volts N–Channel DPAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http://onsemi.com 5 AMPERES 500 VOLTS
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NTD5N50
r14525
NTD5N50/D
t5n50
5n50
5n50 mosfet
NTD5N50
NTD5N50T4
351 D-PAK
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TLE4275
Abstract: 314-D INFINEON PART MARKING DPAK smd regulator 5pin marking vd 5pin
Text: NCV4275 Advance Information 5 V Low−Drop Voltage Regulator This industry standard linear regulator has the capability to drive loads up to 450 mA at 5 V. It is available in DPAK, D2PAK, and TO-220 options. This device is pin-for-pin compatible with Infineon part number TLE4275.
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NCV4275
O-220
TLE4275.
NCV4275/D
TLE4275
314-D
INFINEON PART MARKING DPAK
smd regulator 5pin
marking vd 5pin
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MJD200RL
Abstract: 1N5825 MJD200 MJD200G MJD200RLG MJD200T4 MJD210 MSD6100
Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS
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MJD200
MJD210
MJD200/D
MJD200RL
1N5825
MJD200
MJD200G
MJD200RLG
MJD200T4
MJD210
MSD6100
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6133d
Abstract: P-TO252-5 IL12 BTS 6133D dpak 5 pin
Text: P R O D U C T B R I E F The BTS 6133D is a single channel high-side power switch 10 mΩ in TO252-5 (DPAK 5 pin) package. It is fully protected by embedded protection functions including ReverSafe and InverSafe. ReverSafe is a protection feature that causes the
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6133D
O252-5
B152-H8241-X-X-7600
P-TO252-5
IL12
BTS 6133D
dpak 5 pin
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TS39100
Abstract: TS39104CS SOP8 PNP Transistor Package 2525l
Text: TS39100/1/2/3/4/5 1A Ultra Low Dropout Voltage Regulator with Multi-Function SOT-223 TO-252 DPAK Pin Definition: TS39100CWxx 1. Input 2. Ground (tab) 3. Output Pin Definition: TS39100CPxx 1. Input 2. Ground (tab) 3. Output SOP-8 Pin Definition: TS39101CSxx
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TS39100/1/2/3/4/5
OT-223
O-252
TS39100CWxx
TS39100CPxx
TS39101CSxx
TS39102CS
O-252-5L
TS39104CS
TS39103CP5xx
TS39100
TS39104CS
SOP8 PNP Transistor Package
2525l
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Untitled
Abstract: No abstract text available
Text: MJD200 NPN , MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS, 12.5 WATTS
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MJD200
MJD210
AEC-Q101
MJD200/D
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5P06V
Abstract: 369D AN569 MTD5P06V NTD5P06V d marking code dpak transistor
Text: MTD5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTD5P06V
MTD5P06V/D
5P06V
369D
AN569
MTD5P06V
NTD5P06V
d marking code dpak transistor
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6143d
Abstract: P-TO252-5 BTS 6143D IL12 dpak 5 pin fully protected p channel mosfet
Text: P R O D U C T B R I E F The BTS 6143D is a single channel high-side power switch 10 mΩ in TO252-5 (DPAK 5 pin) package. It is fully protected by embedded protection functions including ReverSafe. ReverSafe is a protection feature that causes the power transistor to switch on in case of reverse
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6143D
O252-5
B152-H8242-X-X-7600
P-TO252-5
BTS 6143D
IL12
dpak 5 pin
fully protected p channel mosfet
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p06vg
Abstract: No abstract text available
Text: MTD5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTD5P06V
MTD5P06V/D
p06vg
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5n50 mosfet
Abstract: 5n50 t5n50 transistor 5N50 NTD5N50T4 NTD5N50-1 AN569 NTD5N50 SMD310
Text: NTD5N50 Preferred Device Power MOSFET 5 Amps, 500 Volts N–Channel DPAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http://onsemi.com Features • • • • • •
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NTD5N50
r14525
NTD5N50/D
5n50 mosfet
5n50
t5n50
transistor 5N50
NTD5N50T4
NTD5N50-1
AN569
NTD5N50
SMD310
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5P06V
Abstract: AN569 MTD5P06V MTD5P06V1 MTD5P06VT4 MOSFET SC-59 power
Text: MTD5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts P–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTD5P06V
r14525
MTD5P06V/D
5P06V
AN569
MTD5P06V
MTD5P06V1
MTD5P06VT4
MOSFET SC-59 power
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5P06V
Abstract: 5p06
Text: MTD5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTD5P06V
MTD5P06V/D
5P06V
5p06
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5P06V
Abstract: Power MOSFET 12 Amps, 60 Volts p-Channel 369D AN569 MTD5P06V MTD5P06VT4 MTD5P06V1
Text: MTD5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTD5P06V
MTD5P06V/D
5P06V
Power MOSFET 12 Amps, 60 Volts p-Channel
369D
AN569
MTD5P06V
MTD5P06VT4
MTD5P06V1
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6163D
Abstract: BTS 6163D P-TO252-5 dpak 5 pin IL12 Q67060-S7424
Text: P R O D U C T B R I E F The BTS 6163D is a single channel high-side power switch 20 mΩ in TO252-5 (DPAK 5 pin) package. It is fully protected by embedded protection functions including ReverSafe. ReverSafe is a protection feature that causes the power transistor to switch on in case of reverse
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6163D
O252-5
B152-H8244-X-X-7600
BTS 6163D
P-TO252-5
dpak 5 pin
IL12
Q67060-S7424
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25V 1A power MOSFET TO-220
Abstract: mosfet 600V 2A TO-252 N-channel MOSFET MOSFET TO-220
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
25V 1A power MOSFET TO-220
mosfet 600V 2A
TO-252 N-channel MOSFET
MOSFET TO-220
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PA 0016 diagram
Abstract: P-channel MOSFET
Text: TSM10P06 60V P-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDSON (mΩ) ID (A) 170 @ VGS = -10V -5 220 @ VGS = -4.5V -2 -60 Features Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
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TSM10P06
O-252
TSM10P06CP
O-252
PA 0016 diagram
P-channel MOSFET
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BYQ28
Abstract: BYQ28E BYQ28E-200 BYQ28EB BYQ28ED-200 diode BYq28 sym084
Text: BYQ28 series E and ED Rectifier diodes ultrafast, rugged Rev. 04 — 5 December 2007 Product data sheet 1. Product profile 1.1 General description Ultrafast, dual common cathode, epitaxial rectifier diodes in a SOT78 TO-220AB and a SOT428 (DPAK) plastic package.
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BYQ28
O-220AB)
OT428
BYQ28E
BYQ28E-200
BYQ28EB
BYQ28ED-200
diode BYq28
sym084
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DPAK A11
Abstract: MOSFET TO-252
Text: TSM10P06 60V P-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDSON (mΩ) ID (A) 170 @ VGS = -10V -5 220 @ VGS = -4.5V -2 -60 Features Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
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TSM10P06
O-252
TSM10P06CP
O-252
DPAK A11
MOSFET TO-252
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TSM2N60CP
Abstract: MOSFET 600V 1A 2a 400v mosfet to-251 TSM2N60 TSM2N60CH
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
TSM2N60CP
MOSFET 600V 1A
2a 400v mosfet to-251
TSM2N60CH
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2a 400v mosfet to-251
Abstract: N-Channel mosfet 600v 1a BRIDGE 2A 600V MOSFET TO-220 MOSFET "CURRENT source" impedance mosfet 600V 2A TO-252 N-channel MOSFET
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
2a 400v mosfet to-251
N-Channel mosfet 600v 1a
BRIDGE 2A 600V
MOSFET TO-220
MOSFET "CURRENT source" impedance
mosfet 600V 2A
TO-252 N-channel MOSFET
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2a 400v mosfet to-251
Abstract: 600V 2A MOSFET N-channel MOSFET 400V TO-220 2a 400v mosfet marking code C5 N-Channel mosfet 600v 1a SOT c5 87 p channel mosfet 100v pin diagram of MOSFET 435 M dpak
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
2a 400v mosfet to-251
600V 2A MOSFET N-channel
MOSFET 400V TO-220
2a 400v mosfet
marking code C5
N-Channel mosfet 600v 1a
SOT c5 87
p channel mosfet 100v
pin diagram of MOSFET
435 M dpak
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Untitled
Abstract: No abstract text available
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
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500V 25A Mosfet
Abstract: DIODE B12
Text: TSM5NB50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) (max.) ID (A) 500 1.5 @ VGS =10V 5 General Description TO-251 (IPAK) The TSM5NB50 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM5NB50
O-220
ITO-220
O-251
O-252
TSM5NB50
TSM5NB50CH
TSM5NB50CP
TSM5NB50CZ
O-251
500V 25A Mosfet
DIODE B12
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