Untitled
Abstract: No abstract text available
Text: M IC R O N DRAM 256K X 8 MT2D2568 DRAM MODULE 256K x 8 DRAM FAST PAGE MODE (MT2D2568 _ MODULE IV IW L /lS k b . LOW POWER, EXTENDED REFRESH (MT2D2568 L) FEATURES PIN ASSIGNMENT (Top View) OPTIONS • Packages Leadless 30-pin SIMM Leaded 30-pin SIP • Power/Refresh
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OCR Scan
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MT2D2568
30-pin
350mW
512-cycle
MT2D2568)
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PDF
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T2D19
Abstract: No abstract text available
Text: M IC R O N MT2D18 1 MEG X 8 DRAM MODULE I 1 MEG X 8 DRAM DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING Timing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 30-pin SIMM M Part Number Example: MT2D18M-6 PIN ASSIGNMENT Top View 30-Pin SIMM
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OCR Scan
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MT2D18
30-pin
MT2D18M-6
DG113SQ
T2D19
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PDF
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MT3D49
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 4 MEG 4 MEG DRAM MODULE X MT3D49 9 DRAM MODULE 9 DRAM X FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages Leadless 30-pin SIMM 30-Pin SIMM (DE-6) V cc CAS DQ1 AO A1
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OCR Scan
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MT3D49
30-pin,
048-cycle
30-Pin
A0-A10;
A0-A10
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PDF
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Untitled
Abstract: No abstract text available
Text: |U |C = R O N 4 MEG DRAM MODULE X 8 MT8D48 DRAM MODULE 4 MEG X 8 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 • Packages Leadless 30 -pin SIM M 30-Pin SIMM (DE-3) Vcc CAS D01
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OCR Scan
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MT8D48
30-pin
024-cycle
T8D48M-6
A0-A10
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PDF
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Untitled
Abstract: No abstract text available
Text: |U |IC =R O N 4 MEG 4 MEG DRAM MODULE X MT9D49 9 DRAM MODULE X 9 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 Packages Leadless 30 -pin SIM M 30-Pin SIMM (DE-4) Vcc CAS DQ1 DQ 2
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OCR Scan
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MT9D49
30-pin
024-cycle
A0-A10
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PDF
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FPM DRAM 30-pin SIMM
Abstract: GMM7322110CMS simm 72 pin edo 30 SIMM GMM794Q00CS 30-pin SIMM SG4M edo dram 72-pin simm
Text: LG Semicon PRODUCT INDEX • 1M Byte DRAM MODULES 30 pin SIMM GMM781000CNS 1M x8B it, 1KRef„ F P M -. 3 5 GMM791000CNS 1M x9B it, 1KRef., F P M - 42 • 4MByte DRAM MODULES (30 pin SIMM)
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OCR Scan
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GMM781000CNS
GMM791000CNS
GMM784000CS
GMM794Q00CS
GMM7321000CS/SG
GMM7321010CS/SG
GMM7321000CNS/SG
GMM7321200CNS/SG
GMM7321010CNS/SG
GMM7321210CNS/SG
FPM DRAM 30-pin SIMM
GMM7322110CMS
simm 72 pin edo
30 SIMM
30-pin SIMM
SG4M
edo dram 72-pin simm
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O N 16 MEG X MT8D168 8 DRAM M OD ULE 16 MEG x 8 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 • Packages Leadless 3 0 -pin SIMM Leaded 30-pin SIP 30-Pin SIMM (T-6)
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OCR Scan
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MT8D168
30-pin
200mW
096-cycle
A0-A10;
A0-A11
MT8DI68
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PDF
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MT8C
Abstract: No abstract text available
Text: M IC R O N MT8C9026 1MEG x 9 DRAM DRAM MODULE STATIC COLUMN PIN ASSIGNMENT (Top View OPTIONS MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30 -pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C9026 is a randomly accessed solid-state
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OCR Scan
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MT8C9026
30-pin
1575mW
MT8C
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PDF
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30-pin simm memory
Abstract: No abstract text available
Text: [M IC R O N MT8C8026 1MEG x 8 DRAM DRAM MODULE STATIC COLUMN PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30 -pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C8026 is a randomly accessed solid-state
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OCR Scan
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MT8C8026
30-pin
1575mW
30-pin simm memory
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PDF
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Untitled
Abstract: No abstract text available
Text: M IC R O N MT8C8025 DRAM MODULE 1MEG x 8 DRAM NIBBLE MODE FEATURES MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30-pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C8025 is a randomly accessed solid-state
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OCR Scan
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MT8C8025
30-pin
1575mW
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PDF
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256k 30-pin SIMM
Abstract: 30-pin simm memory MT8259 30-pin SIMM
Text: |U|IC=RON MT8259 256K X 8 DRAM DRAM MODULE PIN ASSIGNMENT Top View OPTIONS Vcc CÄ5 DQ1 AO A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 NC NC DQ6 MARKING • Timing 80ns access 100ns access 120ns access 150ns access • Packages: Leadless 30-pin SIMM Leaded 30-pin SIP
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OCR Scan
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MT8259
30-pin
120mW
1200mW
256k 30-pin SIMM
30-pin simm memory
MT8259
30-pin SIMM
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT2D48 4 MEG X 8 DRAM MODULE MICRON I TECHNOLOGY. INC DRAM 4 MEG M O D U LE IV IU U U U L 4 MEGABYTE, 5V, FAST PAGE MODE X 8 FEATURES OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages 30-pin SIMM M PIN ASSIGNMENT Front View 30-Pin SIMM
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OCR Scan
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MT2D48
30-pin
T2D48M-6
110ns
130ns
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PDF
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1Mx9 DRAM 30-pin SIMM
Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
Text: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C
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OCR Scan
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1Mx32
1Mx33
1Mx36
1Mx40
2Mx32
2Mx36
1Mx9 DRAM 30-pin SIMM
KMM594000C
30 pin simm
8mx32 simm 72 pin
4Mx9 DRAM 30-pin SIMM
4MX39
4m dram 72-pin simm 32
DRAM 30-pin SIMM
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PDF
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FPM DRAM 30-pin SIMM
Abstract: MT8048
Text: M IC R O N 4 iVIEG DRAM MODULE X MT8D48 3 DRAM MODULE 4 MEG X 8 4 MEGABYTE, 5V, FAST PAGE MODE FEATURES OPTIONS MARKING • Tim ing 60ns access 70ns access -6 -7 P ackages 3 0 -pin SIM M DRAM SIMM • JE D E C - and in d u stry -stan d ard pin ou t in a 30-pin
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OCR Scan
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MT8D48
30-pin
024-cycle
T8D48M
MT8048
FPM DRAM 30-pin SIMM
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PDF
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U351
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM581000A Series 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. Q.22fiF decoupling capacitor Is mounted for each DRAM.
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OCR Scan
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HYM581000A
HY514400
22fiF
HYM581000AM
1BB03-20-MAY93
1BB03-20-MAYS3
U351
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PDF
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HY531000
Abstract: HYM581000 GO2S
Text: •HYUNDAI SEMICONDUCTOR HYM581000 Series 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000 is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2fyF decoupling capacitor is mounted fo r each DRAM.
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OCR Scan
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HYM581000
HY531000
HYM581000M
1BB01-11-M
1BB01
-11-MAY93
1BB01
GO2S
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PDF
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256k 30-pin SIMM
Abstract: No abstract text available
Text: I^ IIC R O N 256K X MT3D2569 9 DRAM MODULE 256K X 9 DRAM DRAM MODULE FAST PAGE MODE MT3D2569 LOW POWER, EXTENDED REFRESH (MT3D2569 L) FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line memory module • High-performance, CMOS silicon-gate process
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OCR Scan
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MT3D2569
30-pin
625mW
512-cycle
MT3D2569)
256k 30-pin SIMM
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PDF
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HYM591000
Abstract: HY531000 HYM591000M AV93
Text: HYUNDAI SEMICONDUCTOR HYM591000 Series 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000 is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM591000
HY531000
HYM591000M
1BB02-12-MAYM
1BB02-12-MAY93
AV93
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM581000C Series 1M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000C is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor Is mounted for each DRAM.
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OCR Scan
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HYM581000C
HY531000A
22fiF
HYM581000CM/CLM
1BB07-10-M
1BB07-10-MAY93
1BB07-1
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI SEMICONDUCTOR HYM594000 Series 4M X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000 is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY514100 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM594000
HY514100
22/iF
HYM594000M
1BC02-20-MAY93
251MAX.
1BC02-20-M
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PDF
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mt4c16m1
Abstract: No abstract text available
Text: ADVANCE I^ IIC R O N 16 MEG X MT8D168 8 DRAM MODULE 16 MEG X 8 DRAM DRAM MODULE FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout in a 30-pin single-in-line package • High-performance CMOS silicon-gate process • Single 5V ±10% power supply
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OCR Scan
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MT8D168
30-pin
600mW
096-cycle
A0-A10;
MT80168
A0-A11
mt4c16m1
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM591000C Series SEMICONDUCTOR 1M x 9-blt CMOS DRAM MODULE DESCRIPTION The HYM591000C Is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM591000C
HY531000A
22/iF
HYM591OOOCM/CLM
1BB08-10-MAYW
4b750Ã
07IV7B1
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM581000 Series 1M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000 is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000 In 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM581000
HY531000
HYM581000M
1BB01-11-MAY93
4L750afl
HYM581000M
1BB01-11-M
HYM581000A
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM584000 Series SEMICONDUCTOR 4M x 8-blt CMOS DRAM MODULE DESCRIPTION The HYM584000 Is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM584000
HY514100
HYM584000M
1BC01-20-MAY93
01-20-M
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PDF
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