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    IXTL2N450

    Abstract: 2N450
    Text: High Voltage Power MOSFET VDSS ID25 IXTL2N450 RDS on (Electrically Isolated Tab) = 4500V = 2A   20 ISOPLUS i5-PakTM N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 4500 V VDGR TJ = 25C to 150C, RGS = 1M


    Original     		IXTL2N450 100ms 2N450 H9-P640) IXTL2N450 PDF

    ixtl2n450

    Abstract: isoplus ixys mounting DS100458
    Text: Advance Technical Information IXTL2N450 High Voltage Power MOSFET VDSS ID25 RDS on D D OD (Electrically Isolated Tab) = 4500V = 2A Ω ≤ 23Ω RGi G ww O ISOPLUS i5-PakTM N-Channel Enhancement Mode O S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXTL2N450 50/60Hz, 100ms TL2N450 ixtl2n450 isoplus ixys mounting DS100458 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage Power MOSFET VDSS ID25 IXTL2N450 RDS on D D OD (Electrically Isolated Tab) = 4500V = 2A Ω ≤ 23Ω RGi G ww O ISOPLUS i5-PakTM N-Channel Enhancement Mode O S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXTL2N450 100ms TL2N450 PDF