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Text: DI9952 DUAL N & P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SO-8 A 8 6 1 E 3 2 Dim Min
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DI9952
Abstract: No abstract text available
Text: DI9952 DUAL N & P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance 8
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Untitled
Abstract: No abstract text available
Text: DI9952 DUAL N & P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell D ensity DMOS Technology Low O n-S tate Resistance High Pow er and C urrent C apability Fast Sw itching Speed High Transient Tolerance SO-8 llll P-CHANNEL tpTffl ,6 uuu A
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Untitled
Abstract: No abstract text available
Text: VISHAY DI9952 [LITER]!!' POWE R S E M ICON D UCTO R j DUAL N & P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance
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DI9952
DS11509
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