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    DS1208 Search Results

    DS1208 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    ADS1208IPW Texas Instruments 10MHz Modulator With Built-in Current Excitation for Hall Sensors 16-TSSOP -40 to 85 Visit Texas Instruments Buy
    SF Impression Pixel

    DS1208 Price and Stock

    Rochester Electronics LLC ADS1208IPW

    ADS1208 10MHZ MODULATOR WITH BUI
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    DigiKey ADS1208IPW Bulk 52
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    Texas Instruments ADS1208IPW

    IC MODULATOR 16BIT 40K 16TSSOP
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    DigiKey ADS1208IPW Tube 180
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    Mouser Electronics ADS1208IPW
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    Rochester Electronics ADS1208IPW 14,771 1
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    Rochester Electronics LLC ADS1208IPWR

    ADC, DELTA-SIGMA, 16-BIT
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    Texas Instruments ADS1208IPWR

    IC MODULATOR 16BIT 40K 16TSSOP
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    DigiKey ADS1208IPWR Reel 2,000
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    Rochester Electronics ADS1208IPWR 2,000 1
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    Texas Instruments ADS1208IPWRG4

    IC MODULATOR 16BIT 40K 16TSSOP
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    DigiKey ADS1208IPWRG4 Reel 2,000
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    DS1208 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DS1208 Unknown dallas semiconductor reliability report Original PDF
    DS1.2-08E IXYS Rectifier Diodes Scan PDF

    DS1208 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features 50 or 75 Applications  Low Insertion Loss: 0.30dB at 1980MHz  High Isolation: 37dB at 2GHz  High IP3: >75dBm at 2GHz


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    RFSW1012 12-Pin, 1980MHz 75dBm 100dBc 41dBmV/ch. DS120821 PDF

    wifi schematic

    Abstract: SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER RFSW8000 RFSW8005 SOI RF switch
    Text: RFSW8005 11b/g/n WiFi SP3T Switch RFSW8005 Proposed 11b/g/n WiFi SP3T SWITCH Package: QFN 16 pin, 3mm x 3mm x 0.5mm  SP3T Switch  Switch Control Voltage 2.5Vto 5V  Low Insertion Loss 0.9dB N/C N/C N/C C_RX C_TX BT N/C RX Applications  N/C TX Features


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    RFSW8005 11b/g/n RFSW8005 IEEE802 16-pin DS120824 wifi schematic SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER RFSW8000 SOI RF switch PDF

    rf3225

    Abstract: bluetooth module RFMD ASM rf3225tr
    Text: RF3225 RF3225QuadBand GMSK POLAR EDGE QUAD-BAND GMSK POLAR EDGE POWER AMP MODULE Package: Module, 5.00 mm x 5.00 mm x 1.00 mm Features  EDGE Large Signal Polar Modulation Compatible  Power Margin for Flexible Tuning  GSM850 Efficiency: 54%  EGSM900 Efficiency: 56%


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    RF3225QuadBand RF3225 GSM850 EGSM900 DCS1800 PCS1900 RF3225 RF3225TR13 RF3225TR7 EIA-481. bluetooth module RFMD ASM rf3225tr PDF

    RFG1M20180SB

    Abstract: j35 fet RFG1M20180SQ
    Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to


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    RFG1M20180 RFG1M20180 RF400-2 -38dBc -55dBc DS120803 RFG1M20180SB j35 fet RFG1M20180SQ PDF

    802.11AC

    Abstract: RFFM4203TR7
    Text: RFFM4203 3.0V TO 5.0V, 2.4GHz TO 2.5GHz 802.11b/g/n/ac WiFi FRONT END MODULE  N/C 2 11 BT VCC 3 10 Vdd VCC 4 9 LNA_EN Applications     IEEE802.11b/g/n/ac WiFi Applications 2.4GHz to 2.5GHz ISM Band Solutions Portable Battery-Powered Equipment


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    RFFM4203 11b/g/n/ac 16-pin, IEEE802 RFFM4203 DS120822 100pF 802.11AC RFFM4203TR7 PDF

    RF9802

    Abstract: No abstract text available
    Text: RF9802 Quad Band GPRS/Linear EDGE Transmit Module RFIN HB Integrated VRAMP Filter  Digital Bias Control  EDGE Low Current Mode  No External Routing  Symmetrical RX Ports          GND RX1 RX2 RX3 17 2 16 RX4 Amplifier Die


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    RF9802 GSM850/EGSM900 DCS1800/PCS1900 RF716x RF9802TR13 RF9802TR7 EIA-481. DS120824 RF9802 PDF

    RDA1005L

    Abstract: No abstract text available
    Text: RDA1005L RDA1005LDigital Controlled Variable Gain Amplifier 50MHz to 4000MHz, 6 Bit DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50MHZ TO 4000MHZ, 6 BIT  Broadband 50MHz to 4000MHz Operation GND 2 GND DATA CLK 29 LE 30 GND GND 31 AMPOUT GND 32 28 27 26 25


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    RDA1005LDigital 50MHz 4000MHz, RDA1005L 32-Pin, 4000MHz 36dB/20dBm RDA1005L PDF

    SBB5082S

    Abstract: No abstract text available
    Text: SBB5082S 50MHz to 6000MHz InGaP HBT Active Bias Gain Block Package Style: Hermetic, 2-pin, 5.8mm x 2.8mm Gain and Return Loss versus Frequency with Bias Tees, Vs = 5V, Is = 71mA 30.0 20.0      Gain and Return Loss (dB) Features Single Fixed 5V Supply


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    SBB5082S 50MHz 6000MHz 35dBm 1950MHz 19dBm SBB5082S DS120822 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3161 QUAD-BAND GSM850/GSM900/DCS/PCS GMSK/EDGE POWER AMP MODULE Package Style: Module, 6mmx6mm Features       Ultra-Small, Ultra-Thin 6mmx6mmx1mm Package Size Integrated VREG Complete Power Control Solution Large Signal Polar Modulation EDGE Compatible


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    RF3161 GSM850/GSM900/DCS/PCS GSM850/EGSM900/DCS/PC 203mm 330mm 025mm DS120824 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF9801 DUAL-BAND EGSM900/DCS1800/GSM/ GPRS/LINEAR EDGE TRANSMIT MODULE        Digital Bias Control Edge Low Current Mode No External Routing Symmetrical RX Ports High Gain Supports Low Drive Level Pin Compatibility with RF716X Family Robust 8kV ESD Protection at


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    RF9801 EGSM900/DCS1800/GSM/ RF716X EGSM900/DCS1800 2002/95/EC RF9801SB RF9801PCBA-41X EGSM900/DCS1800/GSM/ DS120824 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF7115 QUAD-BAND GSM850/GSM900/DCS/PCS TRANSMIT MODULE RoHS Compliant & Pb-Free Product Package Style: Module 7mmx8mm GSM GaAs Die pHEMT Switch LB RF IN 2 Features  VSENSE 1 Reduced Solution Size Integrating Antenna Switch and Harmonic Filtering to Decrease Time


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    RF7115 GSM850/GSM900/DCS/PCS GSM850/900 GSM850/EGSM900/DCS/PCS 2002/95/EC 2005/747/EC. RF7115Quad-Band GSM850/GSM900/DCS/PCS RF7115SB RF7115PCBA-41X PDF

    9842

    Abstract: 9926 9902 DS1208 DS12885 DS2401 DS2405 DS2409 DS2415 9749
    Text: dallas semiconductor reliability report: Process: Metal: Single Poly, Single Metal Ti/TiN layers 0.6 µm Al / 0.5% Cu / 0.8% Si Gate Ox Thickness: Summary Data with Chi-Square Distribution Assumed. Stress Ambient Temperature and Voltage to Field Ambient Temperature And Voltage


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    DS1208 DS12885 DS2401 DS2405 DS2409 DS2415 9842 9926 9902 DS1208 DS12885 DS2401 DS2405 DS2409 DS2415 9749 PDF

    KB910

    Abstract: KB910 B4 edw10 la-2301 IXP150 AOS 3401 RC300ML af7 smd transistor smd transistor MP3 Y8 R833 VL28
    Text: 5 4 3 2 1 D D Compal Confidential C C Fortworth20 EDW10 Schematic Document Intel Protability Processor with ATi RC300ML + IXP150 2004-05-26 B B REV: 1.0 A A Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


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    Fortworth20 EDW10 RC300ML IXP150 LA-2301 KB910 KB910 B4 edw10 la-2301 IXP150 AOS 3401 RC300ML af7 smd transistor smd transistor MP3 Y8 R833 VL28 PDF

    c945 p 331 transistor

    Abstract: Compal LA-2371 la2371 KB910 B4 SMD Transistor Y23 Compal Electronics a4 9 smt APW7057 la-2371 U39b
    Text: A B C D E 1 1 LONGBEACH 10/20 LA-2371 REV 1.0 Schematic 2 2 Portability Prescott/Northwood 3 3 RC300ML RX300ML +IXP150+ATI M11P(128MB VRAM) 2004-07-23 4 4 Compal Electronics, Inc. Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


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    LA-2371 RC300ML RX300ML) IXP150 128MB LA-2371 KB910 c945 p 331 transistor Compal LA-2371 la2371 KB910 B4 SMD Transistor Y23 Compal Electronics a4 9 smt APW7057 U39b PDF

    EPCOS R753

    Abstract: epcos r707 EAL51 SCD-10040 MAX1532A APW7057RKC EPCOS R800 SUYIN_200275MR007G113ZL 3V REGULATOR SOT89 smd Compal Electronics
    Text: 5 4 3 2 1 D D C C Sonoma Dothan EAL50_1 LA2362 Schematic B B A A Compal Secret Data Security Classification 2005/03/01 Issued Date Deciphered Date 2006/03/01 THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


    Original
    LA2362 EAL51 LA-2362 LA-2362-1 150UF EPCOS R753 epcos r707 SCD-10040 MAX1532A APW7057RKC EPCOS R800 SUYIN_200275MR007G113ZL 3V REGULATOR SOT89 smd Compal Electronics PDF

    marvell 88SA8040

    Abstract: smd sot23-3 W32 01u0 Socket AM2 AOS 3401 Compal Electronics SMD Diode S140 APW7057 PC8421 compal
    Text: A B C D E 1 1 Sakhir 10C GC LA-2491 Schematics Document 2 2 Intel Dothan / Alviso GM(PM) / DDR-1(DDR-2) / ICH6-M (nVIDIA NV43M / ATi M24) 2004 / 07 / 05 Rev:0.1 3 3 4 4 Compal Electronics, Inc. Title Cover Sheet THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


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    LA-2491 NV43M LA-2491 50V7K PR140 marvell 88SA8040 smd sot23-3 W32 01u0 Socket AM2 AOS 3401 Compal Electronics SMD Diode S140 APW7057 PC8421 compal PDF

    upd720101 user manual

    Abstract: RTL8101L smd transistor A15 HB foxconn eprom 24C16 SMD MAL 24C16 EEPROM 24C16 LA205 transistor C639 w RC300MD
    Text: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : Sapporo XA COMPAL P/N : DFL10 PCB NO : LA-2051 Revision : 0.1A 1 2 2 Sapporo XA Schematics Document uFCBGA/uFCPGA NorthWood MT 2003 8 27 v0.1A 3 3 4 4 Compal Electronics, Inc. Title Cover Sheet THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


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    DFL10 LA-2051 upd720101 user manual RTL8101L smd transistor A15 HB foxconn eprom 24C16 SMD MAL 24C16 EEPROM 24C16 LA205 transistor C639 w RC300MD PDF

    LA-1931

    Abstract: 120W ac adapter schematic MONTARA-GT smd transistor Ha-16 m21 sot23 transistor foxconn G714 transistor SMD t4 Compal Electronics smd transistor hl6
    Text: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : DBL10 - Sapporo X COMPAL P/N : DA8BL10L010 PCB NO : LA-1931 Revision : 1.0 1 2 2 DBL10 - Sapporo X Schematics Document uFCBGA/uFCPGA NorthWood MT 2003-09-19 v1.0 3 3 4 4 Compal Electronics, Inc. Title Cover Sheet


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    DBL10 DA8BL10L010 LA-1931 PC151 PC152 1000P 2200P; PC153 PR195 120W ac adapter schematic MONTARA-GT smd transistor Ha-16 m21 sot23 transistor foxconn G714 transistor SMD t4 Compal Electronics smd transistor hl6 PDF

    DS2503

    Abstract: DS12C885 DS2505 DS1225Y DS2068 DS2414 DS1868 c1 a6 B712 DS83C950
    Text: RMP Process Samples 0.8 µm Double Poly, Double Metal Monitor Device s Product Rev DS2154 DS2152 A2 DS2154 A2 DS80CH10 A3 DS80CH10 A5 0.6 µm 0.6 µm A2 DS32KHZ A6 A3 Double Poly, Double Metal (Ti/TiN layers used on all Metals) Product Rev DS1722 A2 DS1775


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    DS2154 DS2152 DS80CH10 DS2154 DS80CH10 DS32KHZ DS1722 DS21352 DS21552 DS2196 DS2503 DS12C885 DS2505 DS1225Y DS2068 DS2414 DS1868 c1 a6 B712 DS83C950 PDF

    A7W 34

    Abstract: a7w 20 DS146 a7w 9 ds1480 ds1216 ds2503 DS1722 DS1671 AC501
    Text: RMP Process Samples 0.8 µm 0.6 µm Double Poly, Double Metal 0.8 µm Rev DS80CH10 A3 A2 DS21352 A4 A5 Product Rev DS1722 A2 DS1722 A4 DS1775 A1 DS1775 A2 DS1820 B5 DS1820 B5 DS1820 B6 DS1822 B6 DS1822 B6-PA DS1847 B1 DS1848 B1 DS21352 A3 DS21352 A4 DS21354


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    DS80CH10 DS80CH10 DS1775 DS21352 DS1722 DS1775 DS1820 DS1847 DS2148 A7W 34 a7w 20 DS146 a7w 9 ds1480 ds1216 ds2503 DS1671 AC501 PDF

    DS1868

    Abstract: DS1207 MUBW20-12 A7 DS2505 DS1640
    Text: RMP Process Samples 0.8 µm Double Poly, Double Metal Monitor Device s Product DS2154 DS2152 A2 DS2154 A2 DS80CH10 A3 DS80CH10 A5 0.6 µm A2 DS32KHZ A6 Double Poly, Double Metal (Ti/TiN layers used on all Metals) Product 0.6 µm Rev Rev DS1722 A2 DS1775 A1


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    DS2154 DS2152 DS80CH10 DS2154 DS80CH10 DS32KHZ DS1722 DS1820 DS21354 DS21552 DS1868 DS1207 MUBW20-12 A7 DS2505 DS1640 PDF

    CN1E4KTTD

    Abstract: RDA1005L 68nH CN1E4KTT
    Text: RDA1005L RDA1005LDigital Controlled Variable Gain Amplifier 50MHz to 4000MHz, 6 Bit DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50MHZ TO 4000MHZ, 6 BIT  Broadband 50MHz to 4000MHz Operation GND 2 GND DATA CLK 29 LE 30 GND GND 31 AMPOUT GND 32 28 27 26 25


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    RDA1005LDigital 50MHz 4000MHz, RDA1005L 32-Pin, 4000MHz 38dBm/20dBm CN1E4KTTD RDA1005L 68nH CN1E4KTT PDF

    Untitled

    Abstract: No abstract text available
    Text: RFSA2023 RFSA2023 Voltage Controlled Attenuator VOLTAGE CONTROLLED ATTENUATOR Features Broadband 50MHz to 6000MHz Frequency Range  30dB Attenuation Range  +50dBm IIP3 Typical  +80dBm IIP2 Typical NC 2 RFIN 3 VDD VC GND 15 14 13 CONTROL BLOCK 4 Low Supply Current 1mA Typical


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    RFSA2023 50MHz 6000MHz 80dBm 30dBm 50dBm 16-Pin, DS120813 PDF

    DS12867

    Abstract: DS12B87 for REAL TIME CLOCK DS12887 DS12087 DS1268 ds12887 application note DS12687
    Text: DS12087 DALLAS SEMICONDUCTOR DS12887 Real Time Clock PIN ASSIGNMENT FEATURES • Drop-in replacement for IBM AT computer clock/cal­ endar MOT I NC I • Pin compatible with the MC146818B and DS1287 I2 II ADO II NC • Totally nonvolatile with over 10 years of operation in


    OCR Scan
    DS12087 MC146818B DS1287 24-hour 12-hour DS12B87 DS12887 24-PIN DS12867 DS12B87 for REAL TIME CLOCK DS12887 DS12087 DS1268 ds12887 application note DS12687 PDF