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Catalog Datasheet	MFG & Type	Document Tags	PDF
DMN3115UDM Abstract: No abstract text available Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance	Original	DMN3115UDM AEC-Q101 OT-26 J-STD-020 MIL-STD-202, DS31187 DMN3115UDM	PDF
Untitled Abstract: No abstract text available Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate	Original	DMN3115UDM AEC-Q101 J-STD-020 MIL-STD-202, DS31187	PDF
Untitled Abstract: No abstract text available Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate	Original	DMN3115UDM AEC-Q101 J-STD-020 DS31187	PDF
Untitled Abstract: No abstract text available Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 30 mΩ @ VGS = 1.8V Very Low Gate Threshold Voltage	Original	DMN3115UDM AEC-Q101 OT-26 J-STD-020C DS31187	PDF
marking 3N1 Abstract: DMN3115UDM Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V	Original	DMN3115UDM AEC-Q101 OT-26 J-STD-020C DS31187 marking 3N1 DMN3115UDM	PDF
marking 3N1 Abstract: DMN3115UDM Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.8V Very Low Gate Threshold Voltage Low Input Capacitance	Original	DMN3115UDM AEC-Q101 OT-26 J-STD-020 MIL-STD-202, DS31187 marking 3N1 DMN3115UDM	PDF
Untitled Abstract: No abstract text available Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max 30V 60mΩ @ VGS = 4.5V 80mΩ @ VGS = 2.5V 130mΩ @ VGS = 1.5V •        ID TA = +25°C 3.2A 2.7A 2.1A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching	Original	DMN3115UDM AEC-Q101 DS31187	PDF