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    Untitled

    Abstract: No abstract text available
    Text: DMN3010LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary RDS ON ID TA = +25°C 8.5mΩ @ VGS = 10V 30A 10.5mΩ @ VGS = 4.5V 25A V(BR)DSS 30V Features Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher


    Original
    PDF DMN3010LFG AEC-Q101 DS36195

    Untitled

    Abstract: No abstract text available
    Text: DMN3010LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary RDS ON ID TA = +25°C 8.5mΩ @ VGS = 10V 30A 10.5mΩ @ VGS = 4.5V 25A V(BR)DSS 30V Features • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher


    Original
    PDF DMN3010LFG DS36195

    Untitled

    Abstract: No abstract text available
    Text: DMN3010LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary RDS ON ID TA = +25°C 8.5m @ VGS = 10V 30A 10.5m @ VGS = 4.5V 25A V(BR)DSS 30V Features • Low RDS(ON) – ensures on state losses are minimized  Small form factor thermally efficient package enables higher


    Original
    PDF DMN3010LFG DS36195