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    Untitled

    Abstract: No abstract text available
    Text: DMN30H4D0LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Features ID TA = +25°C • 0.6mm profile – ideal for low profile applications • PCB footprint of 4mm 4Ω @ VGS = 10V 0.55A • Low Gate Threshold Voltage 4Ω @ VGS = 4.5V 0.55A • Low Input Capacitance


    Original     		PDF DMN30H4D0LFDE AEC-Q101 DS36380

    Untitled

    Abstract: No abstract text available
    Text: DMN30H4D0LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 300V 4Ω @ VGS = 10V 4Ω @ VGS = 4.5V 6Ω @ VGS = 2.7V ID TA = +25°C 0.55A 0.55A 0.44A This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


    Original     		PDF DMN30H4D0LFDE AEC-Q101 DS36380

    Untitled

    Abstract: No abstract text available
    Text: DMN30H4D0LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 300V 4Ω @ VGS = 10V 4Ω @ VGS = 4.5V 6Ω @ VGS = 2.7V ID TA = +25°C 0.55A 0.55A 0.44A This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


    Original     		PDF DMN30H4D0LFDE AEC-Q101 DS36380