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    IXZ316N60

    Abstract: MOSFET "symbol 7V"
    Text: IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 600 V ID25 = 18 A Symbol Test Conditions RDS on ≤ 0.47 Ω VDSS


    Original     		PDF IXZ316N60 dsIXZ316N60 IXZ316N60 MOSFET "symbol 7V"

    IXZ316N60

    Abstract: mosfet 50V
    Text: IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V


    Original     		PDF IXZ316N60 IXZ316N60 dsIXZ316N60 mosfet 50V