sot-363 n-channel mosfet
Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
Text: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel
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CMKDM3590
CMKDM7590
CMKDM3575
OT-363
CMKDM3590:
CMKDM7590:
CMKDM3575:
RATI150
CMKDM7590
sot-363 n-channel mosfet
sot-363 p-channel mosfet
Dual N-Channel mosfet sot-363
marking code 12 SOT-363 amplifier
high current sot-363 p-channel mosfet
MARKING 3C5
Dual P-Channel mosfet sot-363
SOT-363 marking th
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FDMJ1032C
Abstract: marking 032 SC-75 Dual N & P-Channel
Text: FDMJ1032C tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ Features General Description Q1: N-Channel This dual N and P-Channel Max rDS on = 90mΩ at VGS = 4.5V, ID = 3.2A MOSFET is produced enhancement
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FDMJ1032C
FDMJ1032C
marking 032
SC-75
Dual N & P-Channel
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Dual N-Channel
Abstract: TLM832D
Text: CTLDM7120-M832D SURFACE MOUNT TLMTM DUAL, N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM7120M832D is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel
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CTLDM7120-M832D
CTLDM7120M832D
TLM832D
54mm2
18-September
Dual N-Channel
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FDD3510H
Abstract: No abstract text available
Text: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s
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FDD3510H
FDD3510H
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Untitled
Abstract: No abstract text available
Text: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s
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FDD3510H
FDD3510H
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Untitled
Abstract: No abstract text available
Text: CMLDM7003T CMLDM7003TG* SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process,
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CMLDM7003T
CMLDM7003TG*
CMLDM7003T:
OT-563
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mosfet nA idss
Abstract: transistor cr marking "MARKING CODE CR" mosfet low vgs
Text: Central CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and
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CMRDM3590
CMRDM3590
OT-963
200mA
25-February
mosfet nA idss
transistor cr marking
"MARKING CODE CR"
mosfet low vgs
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95160
Abstract: MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs TMF3201J Dual-Gate Mosfet 9935 mosfet 95160 3
Text: Preliminary Specification TMF3201J Dual N-Channel Dual-Gate MOSFET □ Description SOT363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with
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TMF3201J
OT363
TMF3201J
OT363
95160
MOSFET 9935
003 SOT363
Dual Gate MOSFET graphs
Dual-Gate Mosfet
9935 mosfet
95160 3
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102R Dual N-channel dual gate MOS-FET Preliminary specification 2000 Jan 06 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102R PINNING - SOT363 FEATURES • Two low noise gain controlled amplifiers in a single
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MBD128
BF1102R
115102/00/02/pp12
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transistor cr marking
Abstract: No abstract text available
Text: CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS
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CMRDM3590
CMRDM3590
125mW
OT-963
200mA
transistor cr marking
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transistor cr marking
Abstract: No abstract text available
Text: CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS
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CMRDM3590
CMRDM3590
125mW
OT-963
125mA
200mA
transistor cr marking
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Untitled
Abstract: No abstract text available
Text: FDC6401N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDC6401N
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Untitled
Abstract: No abstract text available
Text: Features LTC3633A/LTC3633A-1 Dual Channel 3A, 20V Monolithic Synchronous Step-Down Regulator Description n n n n n n n The LTC 3633A is a high efficiency, dual-channel monolithic synchronous buck regulator using a controlled on-time, current mode architecture, with phase lockable switching
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LTC3633A/LTC3633A-1
QFN-24
LTC3604
QFN-16,
MSOP-16E
LTC3626
QFN-20
3633a1fa
com/LTC3633A
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SSOT-6
Abstract: CBVK741B019 F63TNR FDC633N FDC6401N
Text: FDC6401N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDC6401N
SSOT-6
CBVK741B019
F63TNR
FDC633N
FDC6401N
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FDC6401N
Abstract: No abstract text available
Text: FDC6401N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDC6401N
FDC6401N
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Untitled
Abstract: No abstract text available
Text: FDC6401N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDC6401N
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Untitled
Abstract: No abstract text available
Text: Features LTC3633A-2/LTC3633A-3 Dual Channel 3A, 20V Monolithic Synchronous Step-Down Regulator Description n n n n n n n The LTC 3633A-2 is a high efficiency, dual-channel monolithic synchronous buck regulator using a controlled on-time, current mode architecture, with phase lockable switching
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LTC3633A-2/LTC3633A-3
633A-2
QFN-24
LTC3604
QFN-16,
MSOP-16E
LTC3626
QFN-20
3633a23fa
com/LTC3633A-2
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2507N
Abstract: FDW2507N C1923
Text: FDW2507N Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
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FDW2507N
2507N
FDW2507N
C1923
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Untitled
Abstract: No abstract text available
Text: FDW2507N Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
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FDW2507N
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2502P
Abstract: CBHK741B019 F63TNR FDW2502P FDW2507NZ
Text: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
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FDW2507NZ
2502P
CBHK741B019
F63TNR
FDW2502P
FDW2507NZ
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MOSFET TSSOP-8
Abstract: 2502P 2507N CBHK741B019 F63TNR FDW2502P FDW2507N Fairchild MOSFET TSSOP-8 dual n-channel
Text: FDW2507N Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
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FDW2507N
MOSFET TSSOP-8
2502P
2507N
CBHK741B019
F63TNR
FDW2502P
FDW2507N
Fairchild MOSFET TSSOP-8 dual n-channel
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DIODE S4 75a
Abstract: No abstract text available
Text: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
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FDW2507NZ
DIODE S4 75a
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Untitled
Abstract: No abstract text available
Text: DMG9926USD DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N EW PRODU CT • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance • 24m @ VGS = 4.5V • 29m @ VGS = 2.5V • 37m @ VGS = 1.8V Low Gate Threshold Voltage
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DMG9926USD
AEC-Q101
J-STD-020D
DS31757
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Untitled
Abstract: No abstract text available
Text: CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an enhancement-mode dual N-Channel MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver
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CMRDM3590
OT-963
125mA
100mA
200mA
200mA
12-December
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