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    EDAL SERIES BA232 SILICON BRIDGE RECTIFIER Search Results

    EDAL SERIES BA232 SILICON BRIDGE RECTIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650M-F-COVER Murata Manufacturing Co Ltd PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical Visit Murata Manufacturing Co Ltd
    CRG09A Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CMG03A Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 2 A , Rectifier Diode, M-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CRG11B Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 0.4 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CRG10A Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 0.7 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation

    EDAL SERIES BA232 SILICON BRIDGE RECTIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BA232

    Abstract: Edal Series BA232 Silicon Bridge Rectifier BRIDGE-RECTIFIER BA232-10 Bridge rectifier piv bridge rectifier BA232-5 ba2322 ba2325
    Text: Edal SERIES BA232 Silicon Bridge Rectifier ELECTRICAL RATINGS FOR SINGLE PHASE BRIDGE CIRCUIT MAXIMUM ALLOWABLE DC OUTPUT CURRENT: AT 55o C AMBIENT TEMPERATURE AT 100oC AMBIENT TEMPERATURE 2.0 AMPS 1.2 AMPS MAXIMUM SINGLE CYCLE SURGE CURRENT IFSM 60 AMPS


    Original     		BA232 100oC BA232-5 BA232-10 BA232-20 BA232-30 BA232-40 BA232-50 BA232-60 BA232-70 BA232 Edal Series BA232 Silicon Bridge Rectifier BRIDGE-RECTIFIER BA232-10 Bridge rectifier piv bridge rectifier BA232-5 ba2322 ba2325 PDF

    AL1510

    Abstract: AL205 BA172-5
    Text: EDAL The compact design offered by Edal printed circuit board, medium and high current bridges offers a significant reduc­ tion in space requirements. This is a direct result of the ability of these units to ac­ commodate maximum power per unit size and withstand high transient energy.


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