7665
Abstract: MO-47AE
Text: EDI8L24128V 128Kx24 SRAM 3.3 Volt ADVANCED 128Kx24 CMOS High Speed Static RAM Features 128Kx24 bit CMOS Static Random Access Memory Array • Fast Access Times: 12 and 15ns • Individual Byte Enables • User Configurable Organization with Minimal Additional Logic
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EDI8L24128V
128Kx24
MO-47AE)
EDI8L24128V
no8V15AC
MO-47AE
7665
MO-47AE
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Untitled
Abstract: No abstract text available
Text: WDI EDI8L24128V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS INC ADVANCED 128Kx24 CMOS High Speed Static RAM F e a tu re s The EDI8L24128V is a high speed, 3.3 volt, high perform ance, three megabit density Static RAM organized as a 128Kx24 bit array. Fully asynchronous circuitry is used, requiring no clocks or
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OCR Scan
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PDF
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EDI8L24128V
128KX24
MO-47AE)
MO-47AE
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Untitled
Abstract: No abstract text available
Text: WDI EDI8L24128V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS INC ADVANCED 128Kx24 CMOS High Speed Static RAM Features The EDI8L24128V is a high speed, 3.3 volt, high perform ance, three megabit density Static RAM organized as a 128Kx24 bit array. Fully asynchronous circuitry is used, requiring no clocks or
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OCR Scan
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PDF
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EDI8L24128V
128KX24
EDI8L24128V
EDI8L24128V,
I8L24128V
EDI8L24128VRev.
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MO-47AE
Abstract: No abstract text available
Text: ^EDI E D I8 L 2 4 1 2 8 V ELECTRONIC DESIGNS. INC. | 128KX24 SRAM 3.3 Volt ADVANCED 128Kx24 CMOS High Speed Static RAM Features The EDI8L24128V is a high speed, 3.3 volt, high perform 128Kx24 bit CMOS Static ance, three megabit density Static RAM organized as a
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OCR Scan
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PDF
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EDI8L24128V
128KX24
MO-47AE)
EDI8L24128V
EDI8L24128V12AC
MO-47AE
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