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    EF800 Search Results

    EF800 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    RJHSEEF8002 Amphenol Communications Solutions Modular Jack - 8P8C, Right Angle, Two Port, Shield With No EMI Tabs, No LEDs Visit Amphenol Communications Solutions
    RJHSEEF8003 Amphenol Communications Solutions Modular Jack - 8P8C, Right Angle, Single Port, No Shield, No LEDs, Red Housing Visit Amphenol Communications Solutions
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    EF800 Price and Stock

    Littelfuse Inc RGEF800-2

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    DigiKey RGEF800-2 Cut Tape 3,003 1
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    RGEF800-2 Reel 1,500 1,500
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    Mouser Electronics RGEF800-2
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    TTI RGEF800-2 Reel 1,500
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    Ozdisan Elektronik RGEF800-2
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    Littelfuse Inc RUEF800

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    DigiKey RUEF800 Bag 1,229 1
    • 1 $0.96
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    Mouser Electronics RUEF800 5,192
    • 1 $0.78
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    Newark RUEF800 Bulk 10,549 1
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    RUEF800 Bulk 225 1
    • 1 $0.843
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    New Advantage Corporation RUEF800 3,750 1
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    Ozdisan Elektronik RUEF800
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    Littelfuse Inc RHEF800

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    DigiKey RHEF800 Bag 594 1
    • 1 $1.06
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    Mouser Electronics RHEF800 430
    • 1 $0.88
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    • 1000 $0.482
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    TTI RHEF800 Bulk 500
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    Ozdisan Elektronik RHEF800
    • 1 $1.08882
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    Littelfuse Inc RGEF800-1

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    DigiKey RGEF800-1 Bag 461 500
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    Mouser Electronics RGEF800-1
    • 1 $0.85
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    TTI RGEF800-1 Bulk 500
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    Ozdisan Elektronik RGEF800-1
    • 1 $0.94323
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    • 1000 $0.8202
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    Littelfuse Inc RGEF800K

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    DigiKey RGEF800K Bag 362 1
    • 1 $0.89
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    • 100 $0.53
    • 1000 $0.40711
    • 10000 $0.35112
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    Mouser Electronics RGEF800K
    • 1 $0.75
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    • 100 $0.521
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    TTI RGEF800K Bulk 500
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    Ozdisan Elektronik RGEF800K
    • 1 $0.907
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    • 1000 $0.7887
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    Find more EF800 price and stock on Findchips.com

    EF800 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EF800X EPCOS 2-Electrode Arresters Original PDF

    EF800 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Surge arrester 2-electrode arrester Series/Type: Ordering code: EF800X B88069X2641* Version/Date: Version: Issue 05 / 2013-09-04 6 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the table and then change the color to "white" or invisible . This ensures that the table disappears for the customer


    Original     		EF800X B88069X2641* PDF

    EF800X

    Abstract: B88069X2641 S102 T502 ef800
    Text: 2-electrode arrester Series/Type: Ordering code: EF800X B88069X2641xxxx a Version/Date: Version: Issue 03 / 2008-01-18 6 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the table and then change the color to "white" or invisible). This ensures that the table disappears for the customer


    Original     		EF800X B88069X2641xxxx EF800X B88069X2641 S102 T502 ef800 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2-electrode arrester Series/Type: Ordering code: EF800X B88069X2641xxxx a Version/Date: Version: Issue 03 / 2008-01-18 6 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the table and then change the color to "white" or invisible). This ensures that the table disappears for the customer


    Original     		EF800X B88069X2641xxxx PDF

    EF800

    Abstract: EF800X
    Text: Surge Arrester 2-Electrode-Arrester EF800X Ordering code: T. B. D. Preliminary data DC spark-over voltage 1 2) 680 … 1000 V Impulse spark-over voltage at 100 V/µs - for 99 % of measured values - typical values of distribution < 1200 < 1000 V V < 1300 < 1100


    Original     		EF800X 57845/VDE0845 EF800 PDF

    EF800X

    Abstract: EPCOS 800 S102 T502 B88069X2641
    Text: Surge Arrester 2-Electrode-Arrester EF800X Ordering code: B88069X2641xxxx a DC spark-over voltage 1) 2) 680 … 1000 V Impulse spark-over voltage at 100 V/µs - for 99 % of measured values - typical values of distribution < 1200 < 1000 V V < 1300 < 1100 V


    Original     		EF800X B88069X2641xxxx 57845/VDE0845 EF800X EPCOS 800 S102 T502 B88069X2641 PDF

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


    Original     		Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871 PDF

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324 PDF

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


    Original     		S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63 PDF

    120R

    Abstract: C8800
    Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		Am29LV2562M 120R C8800 PDF

    l256mh113

    Abstract: L256ML123R
    Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		Am29LV256M l256mh113 L256ML123R PDF

    L256MH113R

    Abstract: L256ML113R
    Text: Am29LV256M Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG


    Original     		Am29LV256M L256MH113R L256ML113R PDF

    s29gl032m10tair

    Abstract: No abstract text available
    Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics


    Original     		S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, 128-word/256-byte 8-word/16-byte BGA-80P-M02 s29gl032m10tair PDF

    SA293

    Abstract: SA273 988000
    Text: DATASHEET Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


    Original     		Am29LV256M 16-Bit/32 16-word/32-byte 56-pi SA293 SA273 988000 PDF

    L256ML

    Abstract: SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110
    Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


    Original     		Am29LV256M 16-Bit/32 128-word/256-byte 8-word/16-byte L256ML SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110 PDF

    sa330

    Abstract: E3800 spansion top marking Am29LV256M Am29LV256MH S29GL256M
    Text: Am29LV256M Data Sheet For new designs, S29GL256M supercedes Am29LV256MH/L and is the factory-recommended migration path for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced


    Original     		Am29LV256M S29GL256M Am29LV256MH/L S29GLxxxM sa330 E3800 spansion top marking Am29LV256M Am29LV256MH PDF

    S29GL128P

    Abstract: a8800 S29GL032 S29GL256p S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M S29GL256M
    Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For


    Original     		S29GL-M S29GL256M, S29GL128M, S29GL064M, S29GL032M S29GL032A, S29GL064A, S29GL128P, S29GL256P S29GL032M, S29GL128P a8800 S29GL032 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M S29GL256M PDF

    BA512

    Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
    Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh


    Original     		K8S5615ET 22F8h 22FEh 54MHz 66MHz 270sec 240sec 256Byte 00003FH 00007FH BA512 ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379 PDF

    BA339

    Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
    Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA339 BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204 PDF

    29gl064

    Abstract: Operations-S29GL064M 29gl064M 8A000 TSOP-20 FOOTPRINT S29GL032M lead frame pin grid array GL128M jedec mo-142 GL256M
    Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit 3.0 Volt-only Page Mode Flash Memory Featuring 0.23 µm MirrorBit Process Technology Data Sheet For new designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M, S29GL064M, S29GL128M, and S29GL256M,


    Original     		S29GL-M S29GL256M, S29GL128M, S29GL064M, S29GL032M S29GL032A, S29GL064A, S29GL128N, S29GL256N S29GL032M, 29gl064 Operations-S29GL064M 29gl064M 8A000 TSOP-20 FOOTPRINT S29GL032M lead frame pin grid array GL128M jedec mo-142 GL256M PDF

    E78000

    Abstract: SA275 SA388 sa489 transistor SA427 120R 9898H Am29LV2562MH120 sa414
    Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		Am29LV2562M E78000 SA275 SA388 sa489 transistor SA427 120R 9898H Am29LV2562MH120 sa414 PDF

    8A0000

    Abstract: No abstract text available
    Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics


    Original     		S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, 128-word/256-byte 8-word/16-byte S29GLxxxMA0 8A0000 PDF

    A81DC

    Abstract: a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040
    Text: MOTOROLA Order at ANE408/0 SEMICONDUCTOR APPLICATION NOTE ANE408 Previously ANE008 Logarithmic/Linear Conversion Routines for DSP56000/1 Prepared by: Eric Cheval Motorola G eneva, Switzerland I. INTRODUCTION DSP chips are often connected to mono-circuits (cofidecs) in telecommunication applications. When programmed *Cs multichannel DTMF


    OCR Scan     		ANE408/D DSP56000/1 ANE408 ANE008) DSP56000/1 300-3400hz A81DC a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040 PDF

    beam Tube 6L50

    Abstract: EF860 em80 tube EF80 pentode tube em84 6dj8 tube el500 ECL86 1T4T ecc189
    Text: OW'C e \e c v \w\»e S R E C E I V IN G P IC T U R E T U B ES T U B ES C A T H O D E - R A Y R E C T IF IE R T U B E S T U B E S T R A N S M IT T IN G M O D U L A T I N G IM P U L S E T U B E S T U B ES TU B ES K L Y S T R O N S M A G N E T R O N S T R A V E L L I N G


    OCR Scan     		R02N0V, developme82 6U10n PABC80 PCC84 PCC85 PCC88 PCC189 PCF82 PCF200 beam Tube 6L50 EF860 em80 tube EF80 pentode tube em84 6dj8 tube el500 ECL86 1T4T ecc189 PDF

    EF800

    Abstract: ef800 tube telefunken ef telefunken ef800 TELEFUNKEN telefunken tubes TELEFUNKEN e tele 539 telefunken EF 12
    Text: Netzröhre für GW-Heizung indirekt geheizt Parallelspeisung DC-AC-Heating indirectly heated connected in parallel o E F 800 u TELEFUNKEN H F /Z F -P e n t o d e R F / IF -P e n t o d e Zuverlässigkeit Reliability D e r P -F a k to r g ib t d e n v o ra u ss ic h tlic h e n R ö h r e n ­


    OCR Scan     		/V-B0501 EF800 ef800 tube telefunken ef telefunken ef800 TELEFUNKEN telefunken tubes TELEFUNKEN e tele 539 telefunken EF 12 PDF