Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ELECTRONIC SIGNATURE 98H Search Results

    ELECTRONIC SIGNATURE 98H Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    ELECTRONIC SIGNATURE 98H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CR10

    Abstract: J-STD-020B M58LR128GB M58LR128GT VFBGA56
    Text: M58LR128GT M58LR128GB 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M58LR128GT M58LR128GB 54MHz CR10 J-STD-020B M58LR128GB M58LR128GT VFBGA56

    M58LT256GT1ZA

    Abstract: M58LT256G M58LT256GT m58lr256 CR10
    Text: M58LT256GT M58LT256GB 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory Features summary • ■ Supply voltage – VDD = 1.7V to 2.0V for Program, Erase and Read – VDDQ = 2.7V to 3.6V for I/O buffers – VPP = 9V for fast program


    Original     		PDF M58LT256GT M58LT256GB 52MHz 110ns TBGA64 M58LT256GT1ZA M58LT256G M58LT256GT m58lr256 CR10

    Untitled

    Abstract: No abstract text available
    Text: M30L0T8000T2 M30L0T8000B2 256 Mbit 16 Mb x16, multiple bank, multilevel, burst 1.8 V supply Flash memory Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M30L0T8000T2 M30L0T8000B2

    Untitled

    Abstract: No abstract text available
    Text: M30L0R8000T2 M30L0R8000B2 256 Mbit x16, multiple bank, multilevel, burst 1.8 V supply Flash memory Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M30L0R8000T2 M30L0R8000B2

    CR10

    Abstract: 4047N
    Text: M30L0T8000T0 M30L0T8000B0 256 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V core, 3V I/O Flash memory Feature summary • ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 2.2V to 3.6V for I/O Buffers – VPP = 9V for fast program (12V tolerant)


    Original     		PDF M30L0T8000T0 M30L0T8000B0 52MHz LFBGA88 CR10 4047N

    a6583

    Abstract: CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0
    Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M30L0R8000T0 M30L0R8000B0 54MHz a6583 CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0

    CR10

    Abstract: M58LT256JSB M58LT256JST
    Text: M58LT256JST M58LT256JSB 256 Mbit 16 Mb x 16, multiple bank, multilevel, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O Buffers – VPP = 9 V for fast program


    Original     		PDF M58LT256JST M58LT256JSB TBGA64 CR10 M58LT256JSB M58LT256JST

    Untitled

    Abstract: No abstract text available
    Text: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LT128HST M58LT128HSB TBGA64 M58LT128HSB8ZA6 M58LT128HSB8ZA6E \TEMP\SGST\M58LT128HSB8ZA6 20-Aug-2007

    Untitled

    Abstract: No abstract text available
    Text: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LT128HST M58LT128HSB M58LT128HST8ZA6 M58LT128HST8ZA6E

    CR10

    Abstract: M58LT128HSB M58LT128HST
    Text: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LT128HST M58LT128HSB TBGA64 CR10 M58LT128HSB M58LT128HST

    M58LT256JSB

    Abstract: CR10 M58LT256JST M58LT256JSB8
    Text: M58LT256JST M58LT256JSB 256 Mbit 16 Mb x 16, multiple bank, multilevel, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LT256JST M58LT256JSB TBGA64 M58LT256JSB CR10 M58LT256JST M58LT256JSB8

    CR10

    Abstract: M58LR128FB M58LR128FT VFBGA56
    Text: M58LR128FT M58LR128FB 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M58LR128FT M58LR128FB 54MHz CR10 M58LR128FB M58LR128FT VFBGA56

    CR10

    Abstract: J-STD-020B M30L0R7000B0 M30L0R7000T0
    Text: M30L0R7000T0 M30L0R7000B0 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M30L0R7000T0 M30L0R7000B0 54MHz CR10 J-STD-020B M30L0R7000B0 M30L0R7000T0

    117h68

    Abstract: CR10 J-STD-020B
    Text: M30L0R7000T1 M30L0R7000B1 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M30L0R7000T1 M30L0R7000B1 54MHz 117h68 CR10 J-STD-020B

    CR10

    Abstract: M58LT128HSB M58LT128HST
    Text: M58LT128HST M58LT128HSB 128-Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply, Secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LT128HST M58LT128HSB 128-Mbit TBGA64 CR10 M58LT128HSB M58LT128HST

    CR10

    Abstract: J-STD-020B M30L0R8000B0 M30L0R8000T0 JEDEC J-STD-020B
    Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M30L0R8000T0 M30L0R8000B0 54MHz CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0 JEDEC J-STD-020B

    Untitled

    Abstract: No abstract text available
    Text: M58LT256JST M58LT256JSB 256 Mbit 16 Mb x 16, multiple bank, multilevel, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LT256JST M58LT256JSB

    M58LT128HB

    Abstract: M58LT128HT CR10 VFBGA56 026h
    Text: M58LT128HT M58LT128HB 128 Mbit 8 Mb x 16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LT128HT M58LT128HB VFBGA56 M58LT128HB M58LT128HT CR10 VFBGA56 026h

    M58LT128KSB

    Abstract: M58LT128KST
    Text: M58LT128KST M58LT128KSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure flash memories Features „ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LT128KST M58LT128KSB M58LT128KSB

    CR10

    Abstract: M58LR128HB M58LR128HT VFBGA56
    Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program


    Original     		PDF M58LR128HT M58LR128HB VFBGA56 CR10 M58LR128HB M58LR128HT VFBGA56

    Untitled

    Abstract: No abstract text available
    Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LR128HT M58LR128HB

    Untitled

    Abstract: No abstract text available
    Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LR128HT M58LR128HB

    Untitled

    Abstract: No abstract text available
    Text: M58LT128KST M58LT128KSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure flash memories Features „ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LT128KST M58LT128KSB

    M58LR256K

    Abstract: No abstract text available
    Text: M58LR128KC M58LR128KD M58LR256KC M58LR256KD 128- or 256-Mbit x16, mux I/O, multiple bank, multilevel interface, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers


    Original     		PDF M58LR128KC M58LR128KD M58LR256KC M58LR256KD 256-Mbit M58LR128KC/D 16-Mbit M58LR256KC/D M58LR256K