Untitled
Abstract: No abstract text available
Text: Single P-channel MOSFET ELM32405LA-S •General description ■Features ELM32405LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-12A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)
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ELM32405LA-S
ELM32405LA-S
P06P03LDG
O-252
AUG-17-2004
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P06P03
Abstract: P06P03LDG P06P03LD
Text: Single P-channel MOSFET ELM32405LA-S •General description ■Features ELM32405LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-12A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)
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ELM32405LA-S
ELM32405LA-S
P06P03LDG
O-252
AUG-17-2004
P06P03
P06P03LDG
P06P03LD
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Untitled
Abstract: No abstract text available
Text: シングル P チャンネル MOSFET ELM32405LA-S •概要 ■特長 ELM32405LA-S は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-12A ・ Rds on < 45mΩ (Vgs=-10V) ・ Rds(on) < 75mΩ (Vgs=-4.5V)
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ELM32405LA-S
P06P03LDG
O-252
AUG-17-2004
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ELM32405LA
Abstract: No abstract text available
Text: 单 P 沟道 MOSFET ELM32405LA-S •概要 ■特点 ELM32405LA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-30V ·Id=-12A ·Rds on < 45mΩ (Vgs=-10V) ·Rds(on) < 75mΩ (Vgs=-4.5V) ■绝对最大额定值
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ELM32405LA-S
P06P03LDG
O-252
AUG-17-2004
ELM32405LA
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ELM32405LA-S
Abstract: SS510
Text: Single P-channel MOSFET ELM 32405LA-S • General description B F e a tu re s ELM32405LA-S uses advanced trench technology to provide excellentRds on , low gate charge and low gate resistance. • Vds=-30V • Id=-12A • Rds(on) < 45mQ (Vgs=-10V) • Rds(on) < 75mQ (Vgs=-4.5V)
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OCR Scan
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ELM32405LA-S
ELM32405LA-S
SS510
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