Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET ELM34802AA-N •General description ■Features ELM34802AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=4.5A Rds(on) < 68mΩ (Vgs=10V) Rds(on) < 98mΩ (Vgs=5V)
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ELM34802AA-N
ELM34802AA-N
P6803HVG
May-10-2006
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET ELM34802AA-N •General description ■Features ELM34802AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=4.5A Rds(on) < 68mΩ (Vgs=10V) Rds(on) < 98mΩ (Vgs=5V)
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ELM34802AA-N
ELM34802AA-N
P6803HVG
May-10-2006
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ELM34802AA
Abstract: No abstract text available
Text: 双 N 沟道 MOSFET ELM34802AA-N •概要 ■特点 ELM34802AA-N 是 N 沟道低输入电容低工作电压、 •Vds=30V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=4.5A ·Rds on < 68mΩ (Vgs=10V) ·Rds(on) < 98mΩ (Vgs=5V) ■绝对最大额定值
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ELM34802AA-N
May-10-2006
ELM34802AA
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Untitled
Abstract: No abstract text available
Text: デュアルパワー N チャンネル MOSFET ELM34802AA-N •概要 ■特長 ELM34802AA-N は低入力容量 低電圧駆動、 低 ・ Vds=30V オン抵抗という特性を備えた大電流デュアルパワー ・ Id=4.5A MOSFET です。 ・ Rds on < 68mΩ (Vgs=10V)
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ELM34802AA-N
May-10-2006
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