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Untitled Abstract: No abstract text available Text: ELM5964-7PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm Typ. High Gain: G1dB=11.0dB (Typ.) High PAE: ηadd=36% (Typ.) Broad Band: 5.9 to 6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-7PS is a power GaAs FET that is internally matched for	Original	PDF	ELM5964-7PS ELM5964-7PS
FET MARKING Abstract: ELM5964-4PS ELM5964 Sumitomo elm5964 elm5964-4pst elm5964-4 Text: ELM5964-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=37% (Typ.) Frequency Band: 5.9~6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-4PS is a power GaAs FET that is internally matched for	Original	PDF	ELM5964-4PS ELM5964-4PS FET MARKING ELM5964 Sumitomo elm5964 elm5964-4pst elm5964-4
ELM5964-10F Abstract: JESD22-A114 Text: ELM5964-10F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm Typ. ・High Gain: G1dB=10.0dB(Typ.) ・High PAE: hadd=39%(Typ.) ・Broad Band: 5.9～6.4GHz ・Impedance Matched Zin/Zout = 50W ・Hermetically Sealed Package DESCRIPTION	Original	PDF	ELM5964-10F ELM5964-10F 1906B, JESD22-A114
C-Band Power marking E Abstract: No abstract text available Text: ELM5964-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: add=37% (Typ.) Frequency Band: 5.9~6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-4PS is a power GaAs FET that is internally matched for	Original	PDF	ELM5964-4PS ELM5964-4PS C-Band Power marking E
Untitled Abstract: No abstract text available Text: ELM5964-10F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=40.5dBm Typ. • High Gain: G1dB=10.0dB(Typ.) • High PAE: hadd=39%(Typ.) • Broad Band: 5.9 to 6.4GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package	Original	PDF	ELM5964-10F 50ohm ELM5964-10F 50ohm 25deg
C-Band Internally Matched FET Abstract: sumitomo 6600 ELM5964-16F sumitomo 131 datasheet Sumitomo elm5964 JESD22-A114D SCL22 Text: ELM5964-16F C-Band Internally Matched FET FEATURES  High Output Power: P1dB=42.5dBm Typ  High Gain: G1dB=10.0dB (Typ.)  High PAE: add=40 %( Typ.)  Frequency Band: 5.9~6.4GHz  Impedance Matched Zin/Zout = 50  Hermetically Sealed Package	Original	PDF	ELM5964-16F ELM5964-16F C-Band Internally Matched FET sumitomo 6600 sumitomo 131 datasheet Sumitomo elm5964 JESD22-A114D SCL22
Untitled Abstract: No abstract text available Text: ELM5964-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: hadd=37% (Typ.) Frequency Band: 5.9 to 6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-4PS is a power GaAs FET that is internally matched for	Original	PDF	ELM5964-4PS ELM5964-4PS
Untitled Abstract: No abstract text available Text: ELM5964 ELM5964-16F C-Band Band Internally Matched FET FEATURES  High Output Power: P1dB=42.5dBm 42.5dBm Typ (  High Gain: G1dB=10.0dB (Typ.)  High PAE: add=40 %( Typ.)  Frequency Band: 5.9~6.4GHz  Impedance Matched Zin/Zout = 50 50	Original	PDF	ELM5964 ELM5964-16F ELM5964-16F
ELM5964-7PS Abstract: JESD22-A114 C-Band Power marking E ELM7179-7PS Text: ELM5964-7PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm Typ. High Gain: G1dB=11.0dB (Typ.) High PAE: ηadd=36% (Typ.) Broad Band: 5.9 to 6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-7PS is a power GaAs FET that is internally matched for	Original	PDF	ELM5964-7PS ELM5964-7PS JESD22-A114 C-Band Power marking E ELM7179-7PS